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MDV1527URH
MagnaChip
MDV1527URH
MagnaChip
MDV1527URH N-Channel MOSFET, 29 A, 30 V, 8-Pin PowerDFN33 MagnaChip. Maximum Drain Source Resistance: 23.7 mΩ. Maximum Gate Threshold Voltage: 2.7V. Maximum Gate Source Voltage: -20 V, +20 V. Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 23.5 W. Typical Turn-Off Delay Time: 14.8 ns. Transistor Material: Si. Typical Turn-On Delay Time: 5.4 ns.
MMF60R580PTH
MagnaChip
From $0.53 • 10 k+ units available from multiple sources
MMF60R580PTH
MagnaChip
MMF60R580PTH N-Channel MOSFET, 8 A, 600 V, 3-Pin TO-220F MagnaChip. Maximum Drain Source Resistance: 580 mΩ. Maximum Gate Threshold Voltage: 4V. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Category: Power MOSFET. Maximum Power Dissipation: 26 W. Typical Turn-On Delay Time: 14 ns. Width: 4.93mm.
MDP2N60TH
MagnaChip
From $0.17 • 100+ units available from Arrow Electronics
MDP2N60TH
MagnaChip
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 Tube
| Distributor | SKU | Stock | MOQ | 1 | 10 | 50 | 100 | 1,000 | 10,000 | |
|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | V36:1790_15077927 | 167 | $0.17 | $0.17 | Buy |
MDF16N50GTH
MagnaChip
MDF16N50GTH
MagnaChip
MDF16N50GTH N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MagnaChip. Maximum Drain Source Resistance: 350 mΩ. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 49.4 W. Minimum Operating Temperature: -55 °C. Typical Gate Charge @ Vgs: 34.9 nC @ 10 V.
MDF5N50BTH
MagnaChip
MDF5N50BTH
MagnaChip
MDF5N50BTH N-Channel MOSFET, 5 A, 500 V, 3-Pin TO-220F MagnaChip. Maximum Drain Source Resistance: 1.4 Ω. Maximum Gate Threshold Voltage: 4V. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 27 W. Height: 16.13mm. Maximum Operating Temperature: +150 °C. Length: 10.71mm.
MDD5N50RH
MagnaChip
MDD5N50RH
MagnaChip
MDD5N50RH N-Channel MOSFET, 4.4 A, 500 V, 3-Pin DPAK MagnaChip. Maximum Drain Source Resistance: 1.4 Ω. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Package Type: DPAK (TO-252). Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 70 W. Typical Gate Charge @ Vgs: 12.2 nC @ 10 V. Height: 2.39mm. Typical Input Capacitance @ Vds: 500 pF @ 25 V.
MDD2N60RH
MagnaChip
MDD2N60RH
MagnaChip
MDD2N60RH N-Channel MOSFET, 1.9 A, 600 V, 3-Pin DPAK MagnaChip. Maximum Drain Source Resistance: 4.5 Ω. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Package Type: DPAK (TO-252). Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 42 W. Length: 6.73mm. Dimensions: 6.73 x 6.22 x 2.39mm. Transistor Material: Si.
MDD1503RH
MagnaChip
MDD1503RH
MagnaChip
MDD1503RH N-Channel MOSFET, 87 A, 30 V, 3-Pin DPAK MagnaChip. Maximum Drain Source Resistance: 6.8 mΩ. Maximum Gate Threshold Voltage: 2.7V. Maximum Gate Source Voltage: -20 V, +20 V. Package Type: DPAK (TO-252). Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 59.5 W. Typical Gate Charge @ Vgs: 28 nC @ 10 V. Height: 2.39mm. Typical Input Capacitance @ Vds: 1799 pF @ 15 V.
MDD5N40RH
MagnaChip
From $0.37 • 10 k+ units available from Win Source
MDD5N40RH
MagnaChip
MDD5N40RH N-Channel MOSFET, 3.4 A, 400 V, 3-Pin DPAK MagnaChip. Maximum Drain Source Resistance: 1.6 Ω. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Package Type: DPAK (TO-252). Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 45 W. Minimum Operating Temperature: -55 °C. Typical Turn-On Delay Time: 12 ns. Width: 6.22mm.
MDP18N50BTH
MagnaChip
MDP18N50BTH
MagnaChip
MDP18N50BTH N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220 MagnaChip. Maximum Drain Source Resistance: 270 mΩ. Maximum Gate Threshold Voltage: 4V. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 236 W. Forward Diode Voltage: 1.4V. Forward Transconductance: 13S. Typical Turn-Off Delay Time: 222 ns.
MDP11N60TH
MagnaChip
MDP11N60TH
MagnaChip
MDP11N60TH N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220 MagnaChip. Maximum Drain Source Resistance: 550 mΩ. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 182 W. Typical Turn-On Delay Time: 38 ns. Transistor Material: Si. Typical Turn-Off Delay Time: 76 ns.
MDS1524URH
MagnaChip
MDS1524URH
MagnaChip
MDS1524URH N-Channel MOSFET, 19 A, 30 V, 8-Pin SOIC MagnaChip. Maximum Drain Source Resistance: 11.7 mΩ. Maximum Gate Threshold Voltage: 2.7V. Maximum Gate Source Voltage: -20 V, +20 V. Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 5.3 W. Height: 1.5mm. Forward Transconductance: 29S. Forward Diode Voltage: 1.1V.
MDP10N60GTH
MagnaChip
MDP10N60GTH
MagnaChip
MDP10N60GTH N-Channel MOSFET, 10 A, 660 V, 3-Pin TO-220 MagnaChip. Maximum Drain Source Resistance: 700 mΩ. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 156 W. Forward Transconductance: 9S. Minimum Operating Temperature: -55 °C. Typical Turn-Off Delay Time: 116 ns.
MDF3N50TH
MagnaChip
MDF3N50TH
MagnaChip
MDF3N50TH N-Channel MOSFET, 2.8 A, 500 V, 3-Pin TO-220F MagnaChip. Maximum Drain Source Resistance: 2.5 Ω. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 30.5 W. Transistor Material: Si. Dimensions: 10.71 x 4.93 x 16.13mm. Typical Turn-On Delay Time: 9 ns. Minimum Operating Temperature: -55 °C.
MDS1528URH
MagnaChip
MDS1528URH
MagnaChip
MDS1528URH N-Channel MOSFET, 11.9 A, 30 V, 8-Pin SOIC MagnaChip. Maximum Drain Source Resistance: 27.8 mΩ. Maximum Gate Threshold Voltage: 2.7V. Maximum Gate Source Voltage: -20 V, +20 V. Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 4.7 W. Typical Gate Charge @ Vgs: 7.3 nC @ 10 V. Height: 1.5mm. Typical Input Capacitance @ Vds: 453 pF @ 15 V.
MDS1527URH
MagnaChip
MDS1527URH
MagnaChip
MDS1527URH N-Channel MOSFET, 13.1 A, 30 V, 8-Pin SOIC MagnaChip. Maximum Drain Source Resistance: 23.7 mΩ. Maximum Gate Threshold Voltage: 2.7V. Maximum Gate Source Voltage: -20 V, +20 V. Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 4.8 W. Forward Transconductance: 20.3S. Forward Diode Voltage: 1.1V. Dimensions: 4.9 x 3.9 x 1.5mm.
MDD4N60RH
MagnaChip
From $0.23 • 10 k+ units available from Win Source
MDD4N60RH
MagnaChip
MDD4N60RH N-Channel MOSFET, 3.5 A, 600 V, 3-Pin DPAK MagnaChip. Maximum Drain Source Resistance: 2 Ω. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Package Type: DPAK (TO-252). Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 67.5 W. Number of Elements per Chip: 1. Transistor Material: Si. Typical Turn-On Delay Time: 12 ns.
MDU1518URH
MagnaChip
MDU1518URH
MagnaChip
MDU1518URH N-Channel MOSFET, 94 A, 30 V, 8-Pin PowerDFN56 MagnaChip. Maximum Drain Source Resistance: 6.2 mΩ. Maximum Gate Threshold Voltage: 2.7V. Maximum Gate Source Voltage: -20 V, +20 V. Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 65.7 W. Typical Gate Charge @ Vgs: 28.8 nC @ 10 V. Height: 1.1mm. Typical Input Capacitance @ Vds: 1835 pF @ 15 V.
MDD3N40RH
MagnaChip
MDD3N40RH
MagnaChip
MDD3N40RH N-Channel MOSFET, 2 A, 400 V, 3-Pin DPAK MagnaChip. Maximum Drain Source Resistance: 3.4 Ω. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Package Type: DPAK (TO-252). Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 30 W. Typical Input Capacitance @ Vds: 167 pF @ 25 V. Height: 2.39mm. Typical Gate Charge @ Vgs: 5.1 nC @ 10 V.
MMF65R190PTH
MagnaChip
MMF65R190PTH
MagnaChip
MMF65R190PTH N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220F MagnaChip. Maximum Drain Source Resistance: 190 mΩ. Maximum Gate Threshold Voltage: 4V. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Category: Power MOSFET. Maximum Power Dissipation: 34 W. Width: 4.93mm.