MDS1527URH

MagnaChip

Description

MDS1527URH N-Channel MOSFET, 13.1 A, 30 V, 8-Pin SOIC MagnaChip. Maximum Drain Source Resistance: 23.7 mΩ. Maximum Gate Threshold Voltage: 2.7V. Maximum Gate Source Voltage: -20 V, +20 V. Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 4.8 W. Forward Transconductance: 20.3S. Forward Diode Voltage: 1.1V. Dimensions: 4.9 x 3.9 x 1.5mm.