MDF3N50TH

MDF3N50TH N-Channel MOSFET, 2.8 A, 500 V, 3-Pin TO-220F MagnaChip. Maximum Drain Source Resistance: 2.5 Ω. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 30.5 W. Transistor Material: Si. Dimensions: 10.71 x 4.93 x 16.13mm. Typical Turn-On Delay Time: 9 ns. Minimum Operating Temperature: -55 °C.