EDS
EDS

MMF60R580PTH

MagnaChip

Description

MMF60R580PTH N-Channel MOSFET, 8 A, 600 V, 3-Pin TO-220F MagnaChip. Maximum Drain Source Resistance: 580 mΩ. Maximum Gate Threshold Voltage: 4V. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Category: Power MOSFET. Maximum Power Dissipation: 26 W. Typical Turn-On Delay Time: 14 ns. Width: 4.93mm.

Inventory

Distributor SKU Stock MOQ 1 10 50 100 1,000 10,000
RS Components MMF60R580PTH 0 Buy
Win Source MMF60R580PTH 57,000 155 $0.32 $0.29 Buy
Utsource MMF60R580PTH 33,951 $0.56 $0.53 $0.53 $0.53 $0.53 Buy
MMF60R580PTH
In stock

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