MDD1503RH

MDD1503RH N-Channel MOSFET, 87 A, 30 V, 3-Pin DPAK MagnaChip. Maximum Drain Source Resistance: 6.8 mΩ. Maximum Gate Threshold Voltage: 2.7V. Maximum Gate Source Voltage: -20 V, +20 V. Package Type: DPAK (TO-252). Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 59.5 W. Typical Gate Charge @ Vgs: 28 nC @ 10 V. Height: 2.39mm. Typical Input Capacitance @ Vds: 1799 pF @ 15 V.