MDS1524URH

MagnaChip

Description

MDS1524URH N-Channel MOSFET, 19 A, 30 V, 8-Pin SOIC MagnaChip. Maximum Drain Source Resistance: 11.7 mΩ. Maximum Gate Threshold Voltage: 2.7V. Maximum Gate Source Voltage: -20 V, +20 V. Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 5.3 W. Height: 1.5mm. Forward Transconductance: 29S. Forward Diode Voltage: 1.1V.