MDP11N60TH

MDP11N60TH N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220 MagnaChip. Maximum Drain Source Resistance: 550 mΩ. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 182 W. Typical Turn-On Delay Time: 38 ns. Transistor Material: Si. Typical Turn-Off Delay Time: 76 ns.