MDD4N60RH

MDD4N60RH N-Channel MOSFET, 3.5 A, 600 V, 3-Pin DPAK MagnaChip. Maximum Drain Source Resistance: 2 Ω. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Package Type: DPAK (TO-252). Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 67.5 W. Number of Elements per Chip: 1. Transistor Material: Si. Typical Turn-On Delay Time: 12 ns.