MDD2N60RH

MDD2N60RH N-Channel MOSFET, 1.9 A, 600 V, 3-Pin DPAK MagnaChip. Maximum Drain Source Resistance: 4.5 Ω. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Package Type: DPAK (TO-252). Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 42 W. Length: 6.73mm. Dimensions: 6.73 x 6.22 x 2.39mm. Transistor Material: Si.