MDD5N40RH

MDD5N40RH N-Channel MOSFET, 3.4 A, 400 V, 3-Pin DPAK MagnaChip. Maximum Drain Source Resistance: 1.6 Ω. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Package Type: DPAK (TO-252). Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 45 W. Minimum Operating Temperature: -55 °C. Typical Turn-On Delay Time: 12 ns. Width: 6.22mm.