MDD3N40RH

MDD3N40RH N-Channel MOSFET, 2 A, 400 V, 3-Pin DPAK MagnaChip. Maximum Drain Source Resistance: 3.4 Ω. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Package Type: DPAK (TO-252). Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 30 W. Typical Input Capacitance @ Vds: 167 pF @ 25 V. Height: 2.39mm. Typical Gate Charge @ Vgs: 5.1 nC @ 10 V.