MDD5N50RH

MDD5N50RH N-Channel MOSFET, 4.4 A, 500 V, 3-Pin DPAK MagnaChip. Maximum Drain Source Resistance: 1.4 Ω. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Package Type: DPAK (TO-252). Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 70 W. Typical Gate Charge @ Vgs: 12.2 nC @ 10 V. Height: 2.39mm. Typical Input Capacitance @ Vds: 500 pF @ 25 V.