MDS1528URH

MDS1528URH N-Channel MOSFET, 11.9 A, 30 V, 8-Pin SOIC MagnaChip. Maximum Drain Source Resistance: 27.8 mΩ. Maximum Gate Threshold Voltage: 2.7V. Maximum Gate Source Voltage: -20 V, +20 V. Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 4.7 W. Typical Gate Charge @ Vgs: 7.3 nC @ 10 V. Height: 1.5mm. Typical Input Capacitance @ Vds: 453 pF @ 15 V.