MDP18N50BTH

MDP18N50BTH N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220 MagnaChip. Maximum Drain Source Resistance: 270 mΩ. Maximum Gate Threshold Voltage: 4V. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 236 W. Forward Diode Voltage: 1.4V. Forward Transconductance: 13S. Typical Turn-Off Delay Time: 222 ns.