MDP10N60GTH

MagnaChip

Description

MDP10N60GTH N-Channel MOSFET, 10 A, 660 V, 3-Pin TO-220 MagnaChip. Maximum Drain Source Resistance: 700 mΩ. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 156 W. Forward Transconductance: 9S. Minimum Operating Temperature: -55 °C. Typical Turn-Off Delay Time: 116 ns.