MDF5N50BTH

MDF5N50BTH N-Channel MOSFET, 5 A, 500 V, 3-Pin TO-220F MagnaChip. Maximum Drain Source Resistance: 1.4 Ω. Maximum Gate Threshold Voltage: 4V. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 27 W. Height: 16.13mm. Maximum Operating Temperature: +150 °C. Length: 10.71mm.