MMF65R190PTH

MagnaChip

Description

MMF65R190PTH N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220F MagnaChip. Maximum Drain Source Resistance: 190 mΩ. Maximum Gate Threshold Voltage: 4V. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Category: Power MOSFET. Maximum Power Dissipation: 34 W. Width: 4.93mm.

Inventory

Distributor	SKU	Stock	MOQ	1	10	50	100	1,000	10,000
RS Components	MMF65R190PTH	0								Buy
Win Source	MMF65R190PTH	3,500	60							Buy
RS Components (APAC)	MMF65R190PTH	0								Buy

MMF65R190PTH

In stock

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