MDF16N50GTH

MagnaChip

Description

MDF16N50GTH N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MagnaChip. Maximum Drain Source Resistance: 350 mΩ. Maximum Gate Threshold Voltage: 5V. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 49.4 W. Minimum Operating Temperature: -55 °C. Typical Gate Charge @ Vgs: 34.9 nC @ 10 V.