SIC MOSFET, N-CH, 1.2KV, 66A, TO-247;

SIC MOSFET, DUAL N-CH, 1.2KV/417A/MODULE;

Mosfet Array 1200V (1.2kV) 40A Chassis Mount

Diode 650 V 11A Surface Mount TO-252-2

Diode 650 V 11A Surface Mount TO-252-2

Mosfet Array 1200V (1.2kV) 395A (Tc) Chassis Mount

Diode 650 V 32A Surface Mount TO-252-2

CAB450M12XM3, CGD12HBXMP - Gate Driver Power Management Evaluation Board

Mosfet Array 1200V (1.2kV) 450A 850W Chassis Mount Module

N-Channel 650 V 120A (Tc) 416W (Tc) Through Hole TO-247-4L

N-Channel 900 V 35A (Tc) 113W (Tc) Surface Mount TO-263-7

Mosfet Array 1200V (1.2kV) 417A (Tc) Chassis Mount

MOSFET N-CH 1KV 35A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:113.5W; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (20-Jun-2016)

MOSFET N-CH 1KV 22A TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:83W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:C3M Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)

MOSFET N-CH 900V 11.5A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:54W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

BOARD GATE DRIVER FOR SIC MOSFET; Silicon Manufacturer:-; Silicon Core Number:1ED020I12-F2; Kit Application Type:Drivers; Application Sub Type:MOSFET Gate Driver; Kit Contents:Gate Driver Board; Product Range:-; SVHC:No SVHC (17-Dec-2015)

MOSFET DUAL N-CH 1.2KV 193A MODULE; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:193A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.6V; Power Dissipation Pd:925W; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (17-Dec-2015)

MOSFET MODULE 1.2KV PANEL; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:404A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:1.66kW; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (17-Dec-2015)

DIODE SCHOTTKY 1200V 10A TO220-2; Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:14.5A; Total Capacitive Charge Qc:61nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Current Ifsm:250A; Diode Type:SiC Schottky; Forward Current If(AV):10A; Forward Surge Current Ifsm Max:250A; Forward Voltage VF Max:1.8V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Semiconductor Technology:SiC; Termination Type:Through Hole

DIODE SCHOTT 600V 2.4A TO-220-2; Product Range:Z-Rec 600V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Continuous Forward Current If:4A; Total Capacitive Charge Qc:4.8nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Current Ifsm:12A; Diode Type:Schottky; Forward Current If(AV):4A; Forward Surge Current Ifsm Max:21A; Forward Voltage VF Max:1.7V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Semiconductor Technology:SiC; Termination Type:Through Hole