SILICONCARBIDE SCHOTTKY DIODE 24A 650V; Product Range:Z-Rec Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:24A; Total Capacitive Charge Qc:23nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)

SILICONCARBIDE SCHOTTKY DIODE 37A 650V; Product Range:Z-Rec Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:37A; Total Capacitive Charge Qc:34nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)

Wolfspeed C5D50065D SiC Schottky Diode, 650V 100A, 3-Pin TO-247. Diode Configuration: Single. Mounting Type: Through Hole. Maximum Forward Voltage Drop: 1.8V. Length: 16.13mm. Width: 21.1mm. Height: 5.21mm. Peak Non-Repetitive Forward Surge Current: 2kA. Power Dissipation: 300W.

Wolfspeed CGD15FB45P, Gate Driver Module, 9 A, 16V, PCBA.

Wolfspeed C3D10065E SMT SiC Schottky Diode, 650V 32A, 3-Pin DPAK. Diode Configuration: Single. Mounting Type: Surface Mount. Package Type: DPAK (TO-252). Maximum Forward Voltage Drop: 2.4V. Length: 7.34mm. Width: 7.51mm. Height: 2.38mm. Power Dissipation: 150W. Peak Reverse Current: 200µA.

MOSFET, N-CH, 1.2KV, 175DEG C, 469W;

Wolfspeed SiC Schottky Diode 1A, 600V, Mounting Type: Surface Mount, Package Type: TO-252, Maximum Continuous Forward Current: 2A, Diode Configuration: Single, Maximum Forward Voltage Drop: 2.4V, Peak Non-Repetitive Forward Surge Current: 32A, MPN: CSD01060E-TR

Power Management IC Development Tools SiC MOSFET Eval kit Evaluation Board

SIC MOSFET, N-CH, 1.2KV, 66A, TO-247;

SIC MOSFET, DUAL N-CH, 1.2KV/417A/MODULE;

CAB450M12XM3, CGD12HBXMP - Gate Driver Power Management Evaluation Board

Mosfet Array 1200V (1.2kV) 417A (Tc) Chassis Mount

Mosfet Array 1200V (1.2kV) 40A Chassis Mount

Mosfet Array 1200V (1.2kV) 450A 850W Chassis Mount Module

N-Channel 900 V 35A (Tc) 113W (Tc) Surface Mount TO-263-7

Mosfet Array 1200V (1.2kV) 395A (Tc) Chassis Mount

Diode 650 V 11A Surface Mount TO-252-2

Diode 650 V 32A Surface Mount TO-252-2

DIODE SCHOTTKY 1200V 10A TO220-2; Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:14.5A; Total Capacitive Charge Qc:61nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Current Ifsm:250A; Diode Type:SiC Schottky; Forward Current If(AV):10A; Forward Surge Current Ifsm Max:250A; Forward Voltage VF Max:1.8V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Semiconductor Technology:SiC; Termination Type:Through Hole

DIODE SCHOTT 600V 2.4A TO-220-2; Product Range:Z-Rec 600V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Continuous Forward Current If:4A; Total Capacitive Charge Qc:4.8nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Current Ifsm:12A; Diode Type:Schottky; Forward Current If(AV):4A; Forward Surge Current Ifsm Max:21A; Forward Voltage VF Max:1.7V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Semiconductor Technology:SiC; Termination Type:Through Hole