MOSFET N-CH 1KV 35A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:113.5W; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (20-Jun-2016)

SILICONCARBIDE SCHOTTKY DIODE 24A 650V; Product Range:Z-Rec Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:24A; Total Capacitive Charge Qc:23nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)

SILICONCARBIDE SCHOTTKY DIODE 37A 650V; Product Range:Z-Rec Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:37A; Total Capacitive Charge Qc:34nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)

MOSFET SIX N-CH 1.2KV 29.5A MODULE; Transistor Polarity:Six N Channel; Continuous Drain Current Id:29.5A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:167W; Operating Temperature Max:150°C; Product Range:-; No. of Pins:28Pins; Transistor Case Style:Module

DIODE SCHOTTKY 1200V 10A TO220-2; Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:14.5A; Total Capacitive Charge Qc:61nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Current Ifsm:250A; Diode Type:SiC Schottky; Forward Current If(AV):10A; Forward Surge Current Ifsm Max:250A; Forward Voltage VF Max:1.8V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Semiconductor Technology:SiC; Termination Type:Through Hole

DIODE SCHOTT 600V 2.4A TO-220-2; Product Range:Z-Rec 600V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Continuous Forward Current If:4A; Total Capacitive Charge Qc:4.8nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Current Ifsm:12A; Diode Type:Schottky; Forward Current If(AV):4A; Forward Surge Current Ifsm Max:21A; Forward Voltage VF Max:1.7V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Semiconductor Technology:SiC; Termination Type:Through Hole

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 600V, 10A

DIODE SCHOTTKY 1200V 7.5A SIC 2TO220; Product Range:Z-Rec 1200V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:29.5A; Total Capacitive Charge Qc:52nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Diode Type:SiC Schottky; Forward Current If(AV):14A; Forward Surge Current Ifsm Max:71A; Forward Voltage VF Max:1.8V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Semiconductor Technology:SiC

DIODE SCHOTTKY 1200V 2X10A SIC 3TO247; Product Range:Z-Rec 1200V Series; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:68A; Total Capacitive Charge Qc:104nC; Diode Case Style:TO-247; No. of Pins:3 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Diode Type:SiC Schottky; Forward Current If(AV):32A; Forward Surge Current Ifsm Max:71A; Forward Voltage VF Max:1.8V; No. of Pins:3Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Semiconductor Technology:SiC

DIODE SCHOTTKY 650V 10A SIC TO220; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Forward Current If(AV):10A; Forward Voltage VF Max:1.8V; Forward Surge Current Ifsm Max:80A; Operating Temperature Max:175°C; Diode Case Style:TO-220; No. of Pins:2Pins; Packaging:Each; Product Range:Z-Rec 650V Series; Automotive Qualification Standard:-; Continuous Forward Current If:10A; Diode Type:SiC Schottky; Junction Temperature Tj Max:175°C; Operating Temperature Min:-55°C; Total Capacitive Charge Qc:25nC

MOSFET N-CH 1700V 4.9A SIC TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):0.95ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.4V; Power Dissipation Pd:69W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Operating Temperature Min:-55°C

DIODE SCHOTTKY 1A 600V TO-252; Product Range:Z-Rec 600V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Continuous Forward Current If:2A; Total Capacitive Charge Qc:3.3nC; Diode Case Style:TO-252; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Diode Type:SiC Schottky; Forward Current If(AV):1A; Forward Surge Current Ifsm Max:9A; Forward Voltage VF Max:1.8V; MSL:MSL 1 - Unlimited; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Semiconductor Technology:SiC

MOSFET N-CH 1KV 22A TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:83W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:C3M Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)

MOSFET N-CH 900V 11.5A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:54W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

BOARD GATE DRIVER FOR SIC MOSFET; Silicon Manufacturer:-; Silicon Core Number:1ED020I12-F2; Kit Application Type:Drivers; Application Sub Type:MOSFET Gate Driver; Kit Contents:Gate Driver Board; Product Range:-; SVHC:No SVHC (17-Dec-2015)

MOSFET DUAL N-CH 1.2KV 193A MODULE; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:193A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.6V; Power Dissipation Pd:925W; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (17-Dec-2015)

MOSFET MODULE 1.2KV PANEL; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:404A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:1.66kW; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (17-Dec-2015)

Mosfet Array 1200V (1.2kV) 40A Chassis Mount

Wolfspeed CGD15FB45P, Gate Driver Module, 9 A, 16V, PCBA.

Wolfspeed C3D10065E SMT SiC Schottky Diode, 650V 32A, 3-Pin DPAK. Diode Configuration: Single. Mounting Type: Surface Mount. Package Type: DPAK (TO-252). Maximum Forward Voltage Drop: 2.4V. Length: 7.34mm. Width: 7.51mm. Height: 2.38mm. Power Dissipation: 150W. Peak Reverse Current: 200µA.