RF Development Tools Test Board without GaN MMIC

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 600V, 2A

RF MOSFET Transistors RF LDMOS FET

Diode 650 V 19A Through Hole TO-220-2 Isolated Tab

RF Mosfet

N-Channel 1200 V 100A (Tc) 469W (Tc) Through Hole TO-247-3

MOSFET SIC N CH 1200V 33A TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:150W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:125°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Current Id Max:33A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +125°C; Voltage Vgs Max:25V

DIODE SCHOTTKY 6A 650V TO-220; Product Range:Z-Rec 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:9A; Total Capacitive Charge Qc:15nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Diode Type:SiC Schottky; Forward Current If(AV):6A; Forward Surge Current Ifsm Max:70A; Forward Voltage VF Max:1.8V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Semiconductor Technology:SiC

MOSFET SIC N CH 1200V 24A TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:152W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:125°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +125°C

MOSFET N-CH 1.2KV 19A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.6V; Power Dissipation Pd:125W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

MOSFET N-CH 1.2KV 10A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:62.5W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

SIC SCHOTTKY DIODE AEC-Q101 TO-247; Product Range:Z-Rec Series; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:55A; Total Capacitive Charge Qc:24nC; Diode Case Style:TO-247; No. of Pins:3 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; SVHC:No SVHC (17-Dec-2015); Forward Current If(AV):55A; Forward Surge Current Ifsm Max:157A; Forward Voltage VF Max:1.8V; Operating Temperature Max:175°C; Semiconductor Technology:SiC

MOSFET N-CH 900V 23A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:97W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

MOSFET N-CH 900V 22A TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:83W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (17-Dec-2015)

DIODE SCHOTTKY 1A 600V TO-220; Product Range:Z-Rec 600V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Continuous Forward Current If:2A; Total Capacitive Charge Qc:3.3nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Diode Type:SiC Schottky; Forward Current If(AV):1A; Forward Surge Current Ifsm Max:9A; Forward Voltage VF Max:1.8V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Semiconductor Technology:SiC

BOARD DUAL 1700V DRIVER FOR MOSFET; Silicon Manufacturer:-; Silicon Core Number:-; Kit Application Type:Drivers; Application Sub Type:MOSFET Gate Driver; Kit Contents:Gate Driver Board; Product Range:-; SVHC:No SVHC (17-Dec-2015)

EVAL BRD C2M0080120D 1.2KV SIC MOSFET; Silicon Manufacturer:-; Silicon Core Number:C2M0080120D; Kit Application Type:Power Management; Application Sub Type:SiC MOSFET; Kit Contents:Eval Board C2M0080120D; Product Range:-; SVHC:No SVHC (17-Dec-2015)

SIC MOSFET N-CH 900V 63A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.4V; Power Dissipation Pd:149W; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:C3M Series; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2018)

MODULE 1200V 50A SIC 6PACK; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:337W; Operating Temperature Max:150°C; Product Range:-; No. of Pins:20Pins; Operating Temperature Min:-40°C; Transistor Case Style:Module

SIC SCHOT DIODE 600V 1.7A SIC QFN; Product Range:Z-Rec 600V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Continuous Forward Current If:7A; Total Capacitive Charge Qc:4.4nC; Diode Case Style:QFN; No. of Pins:3 Pin; Junction Temperature Tj Max:160°C; Packaging:Each; Automotive Qualification Standard:-; Diode Type:SiC Schottky; Forward Current If(AV):1.7A; Forward Surge Current Ifsm Max:15A; Forward Voltage VF Max:1.7V; MSL:MSL 1 - Unlimited; No. of Pins:3Pins; Operating Temperature Max:160°C; Operating Temperature Min:-55°C; Semiconductor Technology:SiC