MOSFET N-CH 1.2KV 19A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.6V; Power Dissipation Pd:125W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

MOSFET N-CH 1.2KV 10A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:62.5W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

SIC SCHOTTKY DIODE AEC-Q101 TO-247; Product Range:Z-Rec Series; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:55A; Total Capacitive Charge Qc:24nC; Diode Case Style:TO-247; No. of Pins:3 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; SVHC:No SVHC (17-Dec-2015); Forward Current If(AV):55A; Forward Surge Current Ifsm Max:157A; Forward Voltage VF Max:1.8V; Operating Temperature Max:175°C; Semiconductor Technology:SiC

MOSFET N-CH 900V 23A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:97W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

MOSFET N-CH 900V 22A TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:83W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (17-Dec-2015)

DIODE SCHOTTKY 1A 600V TO-220; Product Range:Z-Rec 600V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Continuous Forward Current If:2A; Total Capacitive Charge Qc:3.3nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Diode Type:SiC Schottky; Forward Current If(AV):1A; Forward Surge Current Ifsm Max:9A; Forward Voltage VF Max:1.8V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Semiconductor Technology:SiC

MOSFET MOD, DUAL N-CH, 1.2KV, 395A;

N-Channel 1200 V 100A (Tc) 469W (Tc) Through Hole TO-247-3

Diode 650 V 19A Through Hole TO-220-2 Isolated Tab

Wolfspeed C3D08060A SiC Schottky Diode, 600V 8A, 2-Pin TO-220. Diode Configuration: Single. Number of Elements per Chip: 1. Mounting Type: Through Hole. Maximum Forward Voltage Drop: 2.4V. Length: 10.41mm. Width: 4.7mm. Height: 15.62mm. Peak Non-Repetitive Forward Surge Current: 220A. Peak Reverse Current: 200µA.

Wolfspeed CVFD20065A SiC Schottky Diode, 650V 57A, 2-Pin TO-220. Diode Configuration: Single. Number of Elements per Chip: 1. Mounting Type: Through Hole. Maximum Forward Voltage Drop: 1.8V. Length: 10.41mm. Width: 15.62mm. Height: 4.69mm. Peak Non-Repetitive Forward Surge Current: 1.4kA. Power Dissipation: 187.5W.

MOSFET 900V 65mOhms SiC AUTO AECQ101

MOSFET 900V 280mOhms SiC AUTO AECQ101

ZFETTM SIC DMOSFET 1700V VDS;

SILICONCARBIDE SCHOTTKY DIODE 30A 650V; Product Range:Z-Rec Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:30A; Total Capacitive Charge Qc:29nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)

EVALUATION BOARD SIC MOSFET; Silicon Manufacturer:Wolfspeed; Silicon Core Number:C3M0120090J; Kit Application Type:Power Management; Application Sub Type:SiC MOSFET; Kit Contents:Evaluation Board C3M0120090J; Product Range:-; SVHC:No SVHC (15-Jan-2019)

EVALUATION BOARD SIC MOSFET; Silicon Manufacturer:Wolfspeed; Silicon Core Number:C3M0075120K; Kit Application Type:Power Management; Application Sub Type:SiC MOSFET; Kit Contents:Evaluation Board C3M0075120K; Product Range:-; SVHC:No SVHC (15-Jan-2019)

MOSFET N CH 1.2KV 63A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:283W; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:C3M Series; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)

MOSFET MODULE, DUAL N-CH, 1.2KV, 450A;

Standard LEDs - Through Hole Round 503-B series LED -Red Color,Full Rank,Bulk Pack