MOSFET DUAL N-CH 1.2KV 193A MODULE; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:193A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.6V; Power Dissipation Pd:925W; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (17-Dec-2015)

MOSFET MODULE 1.2KV PANEL; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:404A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:1.66kW; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (17-Dec-2015)

BOARD GATE DRIVER FOR SIC MOSFET; Silicon Manufacturer:-; Silicon Core Number:1ED020I12-F2; Kit Application Type:Drivers; Application Sub Type:MOSFET Gate Driver; Kit Contents:Gate Driver Board; Product Range:-; SVHC:No SVHC (17-Dec-2015)

Wolfspeed CGD15FB45P, Gate Driver Module, 9 A, 16V, PCBA.

Wolfspeed C5D50065D SiC Schottky Diode, 650V 100A, 3-Pin TO-247. Diode Configuration: Single. Mounting Type: Through Hole. Maximum Forward Voltage Drop: 1.8V. Length: 16.13mm. Width: 21.1mm. Height: 5.21mm. Peak Non-Repetitive Forward Surge Current: 2kA. Power Dissipation: 300W.

Wolfspeed C3D10065E SMT SiC Schottky Diode, 650V 32A, 3-Pin DPAK. Diode Configuration: Single. Mounting Type: Surface Mount. Package Type: DPAK (TO-252). Maximum Forward Voltage Drop: 2.4V. Length: 7.34mm. Width: 7.51mm. Height: 2.38mm. Power Dissipation: 150W. Peak Reverse Current: 200µA.

Power Management IC Development Tools SiC MOSFET Eval kit Evaluation Board

SILICONCARBIDE SCHOTTKY DIODE 24A 650V; Product Range:Z-Rec Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:24A; Total Capacitive Charge Qc:23nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)

SILICONCARBIDE SCHOTTKY DIODE 37A 650V; Product Range:Z-Rec Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:37A; Total Capacitive Charge Qc:34nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)

Diode 650 V 32A Surface Mount TO-252-2

Diode 650 V 11A Surface Mount TO-252-2

Mosfet Array 1200V (1.2kV) 395A (Tc) Chassis Mount

Mosfet Array 1200V (1.2kV) 450A 850W Chassis Mount Module

Mosfet Array 1200V (1.2kV) 417A (Tc) Chassis Mount

N-Channel 900 V 35A (Tc) 113W (Tc) Surface Mount TO-263-7

MOSFET N-CH 1.2KV 19A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.6V; Power Dissipation Pd:125W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

MOSFET N-CH 1.2KV 10A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:62.5W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

SIC SCHOTTKY DIODE AEC-Q101 TO-247; Product Range:Z-Rec Series; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:55A; Total Capacitive Charge Qc:24nC; Diode Case Style:TO-247; No. of Pins:3 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; SVHC:No SVHC (17-Dec-2015); Forward Current If(AV):55A; Forward Surge Current Ifsm Max:157A; Forward Voltage VF Max:1.8V; Operating Temperature Max:175°C; Semiconductor Technology:SiC

MOSFET N-CH 900V 23A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:97W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

MOSFET N-CH 900V 22A TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:83W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (17-Dec-2015)