8 Watt GaN MMIC Power Amplifier, 2 - 20 GHz Features: High Psat: +39 dBm Power Gain at Psat: +5.5 dB High Output IP3: +45 dBm Small Signal Gain: 11 dB Supply Voltage: +28V @ 850 mA 50 Ohm Matched Input/Output Die Size: 2 x 4 x 0.1 mm

50 dB, Logarithmic Detector, 1 - 23 GHz Features: Wide Input Bandwidth: 1 to 23 GHz Wide Dynamic Range: 50 dB up to 23 GHz Single Positive Supply: +3.3V Excellent Stability Over Temperature Fast Rise / Fall Time: 12 / 65 ns 16 Lead 3x3 mm SMT Package: 9mm²

10 W (40 dBm), 0.01 GHz to 1.1 GHz, GaN Power Amplifier Features: High small signal gain: 20 dB typical POUT: 41.5 dBm typical at PIN = 27 dBm High PAE: 60% typical at PIN = 27 dBm Instantaneous bandwidth: 0.01 GHz to 1.1 GHz across all frequencies Supply voltage: VDD = 28 V at a quiescent current of 100 mA Internal prematching Simple and compact external tuning for optimal performance 5 mm × 5 mm, 32-lead LFCSP

>10 W (42 dBm), 2.7 GHz to 3.8 GHz, GaN Power Amplifier Features: High small signal gain: 34.5 dB typical High output power: 42 dBm typical at PIN = 18 dBm High PAE: 55% typical at PIN = 18 dBm Frequency range: 2.7 GHz to 3.8 GHz Supply voltage: VDD = 28 V at a quiescent current of 150 mA 5 mm × 5 mm, 32-lead LFCSP_CAV package

GaAs pHEMT MMIC High Gain Power Amplifier, 2 - 50 GHz Features: P1dB Output Power: 12.5 dBm Psat Output Power: 17.5 dBm Gain: 14.5 dB Output IP3: 23 dBm Supply Voltage: +5 V@80 mA 50 Ω Matched Input/Output Die Size: 2.7 × 1.45 × 0.1 mm

27 GHz to 32 GHz, GaAs, pHEMT, MMIC Power Amplifier Features: PSAT: 29.5 dBm High output IP3: 37 dBm High gain: 24 dB (typical) at 29 GHz to 32 GHz DC supply: 5 V at 600 mA 50 Ω matched input/output 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2

8.71 GHz to 9.55 GHz MMICVCO with Half Frequency Features: Dual output frequency range  fOUT = 8.71 GHz to 9.55 GHz  fOUT/2 = 4.355 GHz to 4.775 GHz  Output power (POUT): 11 dBm  Single-sideband (SSB) phase noise: −115 dBc/Hz at 100 kHz  No external resonator needed  RoHS-compliant, 5 mm × 5 mm, 32-lead LFCSP: 25 mm² 

GaAs MMIC SPDT Switch SMT, DC - 3 GHz Features: Low Insertion Loss: 0.4dB Ultra Small Package: MSOP8 High Input IP3: +50 dBm Positive Control: 0/+3V @ 0.1 uA

GaAs MMIC SOT26 SPDT Switch, DC - 3 GHz Features: Low Insertion Loss: 0.4 dB Ultra Small Package: SOT26 Input IP3: +59 dBm Positive Control: 0/+3V @ 3 uA

DBL-BAL Mixer SMT, 0.7 - 2.0 GHz Features: Ultra Small Package: MSOP8 Conversion Loss: 9 dB LO / RF Isolation: 24 dB IP3 (Input): +17 dBm

DBL-BAL Mixer SMT, 1.5 - 4.5 GHz Features: Ultra Small Package: MSOP8 Conversion Loss: 8.5 dB LO / RF Isolation: 40 dB

DBL-BAL Mixer SMT, 5 - 12 GHz Features: Ultra Small Package: MSOP8 Conversion Loss: 8.5 dB Wideband IF: DC - 4 GHz

GaAs, Nonreflective, SP4T Switch 100 MHz to 4 GHz Features: Broadband frequency range: 100 MHz to 4 GHz Nonreflective 50 Ω design Low insertion loss: 0.7 dB at 2 GHz High isolation: 43 dB at 2 GHz High input linearity at 250 MHz to 4 GHz 1 dB compression (P1dB): 29 dBm typical Third order intercept (IP3): 47 dBm typical High power handling 28.5 dBm through path 25 dBm terminated path Single positive supply: 3 V to 5 V Integrated 2 to 4 line decoder 16-lead, 3 mm × 3 mm LFCSP package ESD rating: 250 V (Class 1A) Pin compatible with the HMC7992 HMC241ALP3E supports defense and aerospace applications (AQEC standard) Download the HMC241ATCPZ-EP data sheet Military temperature range (−55°C to +125°C) Controlled manufacturing baseline One assembly/test site Product change notification Qualification data available on request

HMC241LP3 / HMC241QS16SP4T Nonreflective Switch SMT, DC to 4 GHz Features: High isolation: 43 dB @ 2 GHz Low insertion loss: 0.5 dB to 0.7 dB @ 2 GHz Single positive supply: Vdd = 5 V Integrated 2:4 TTL decoder 3 mm x 3 mm SMT package and 16-lead QSOP package RoHS compliant product

HMC241LP3 / HMC241QS16SP4T Nonreflective Switch SMT, DC to 4 GHz Features: High isolation: 43 dB @ 2 GHz Low insertion loss: 0.5 dB to 0.7 dB @ 2 GHz Single positive supply: Vdd = 5 V Integrated 2:4 TTL decoder 3 mm x 3 mm SMT package and 16-lead QSOP package RoHS compliant product

GAAS MMIC SP8T Non-Reflective Switch, DC - 2.5 GHz Features: Low Insertion Loss (2 GHz): 1.1dB Single Positive Supply: Vdd = +5V Integrated 3:8 TTL Decoder 24 Lead QSOP Package

Sub-Harmonic Mixer SMT, 20 - 30 GHz Features: Integrated LO Amplifier: -4 dBm Input Sub-Harmonically Pumped (x2) LO High 2LO/RF Isolation: 35 dB LM3 SMT Package

Sub-Harmonic Mixer SMT, 20 - 31 GHz Features: Integrated LO Amplifier: -4 dBm Input Sub-Harmonically Pumped (x2) LO High 2LO/RF Isolation: > 28 dB LM3 SMT Package

14 GHz to 32 GHz, GaAs, MMIC, Double Balanced Mixer Features: Passive: No DC Bias Required Conversion loss (downconverter): 9 dB typical at 14 GHz to 30 GHz Single-sideband noise figure: 11 dB typical at 14 GHz to 30 GHz Input IP3 (downconverter): 20 dBm typical at 14 GHz to 30 GHz Input P1dB compression point (downconverter): 12 dBm typical at 14 GHz to 30 GHz Input IP2: 53 dBm typical at 14 GHz to 30 GHz RF to IF isolation: 30 dB typical at 14 GHz to 30 GHz LO to RF isolation: 46 dB typical at 14 GHz to 30 GHz LO to IF isolation: 34 dB typical at 14 GHz to 30 GHz RF return loss: 10 dB typical at 14 GHz to 30 GHz LO return loss: 9 dB typical at 14 GHz to 30 GHz Wide IF frequency range: dc to 8 GHz Small size: 7-pad bare die [CHIP]

GaAs, MMIC, Double Balanced Mixer, 24 - 32 GHz Features: Conversion loss (downconverter): 11 dB typical LO to RF isolation: 36.5 dB typical for 24 GHz to 30 GHz performance Input IP3 (downconverter): 20 dBm typical 12-terminal, RoHS compliant, 3 mm × 3 mm LCC package