Oven-Compensated, Buried Zener, 7.05 V Voltage Reference Features: 7.05 V ultrastable shunt reference Low temperature coefficient: 0.2 ppm/ Available in 4-pin TO-46 and 8-terminal LCC Typical reference noise for 10 Hz < f < 1 kHz: 1.84 μV rms Initial accuracy range: –300 mV to +250 mV Low dynamic impedance: 0.04 Ω in TO-46, 0.011 Ω in LCC External thermal insulator provided for TO-46 Upgrade path for legacy LM399, now also in surface-mount technology (SMT)

Low Noise, Micropower 5.0 V Precision Voltage Reference Features: 6.0 V to 15 V supply range Supply current: 15 μA maximum Low noise: 15 μV p-p typical (0.1 Hz to 10 Hz) High output current: 5 mA Pin-compatible with the REF02/REF19xADR293-EP supports defense and aerospace applications (AQEC standard) Download ADR293-EP Data Sheet (pdf) See datasheet for additional features

Ultralow Noise, LDO XFET 2.5V Voltage Reference w/Current Sink and Source Features: Ultralow noise (0.1 Hz to 10 Hz) ADR440: 1 μV p-p ADR441: 1.2 μV p-p ADR443: 1.4 μV p-p ADR444: 1.8 μV p-p ADR445: 2.25 μV p-p Superb temperature coefficient A Grade: 10 ppm/°C B Grade: 3 ppm/°C Low dropout operation (supply voltage headroom): 500 mV Input range: (VOUT + 500 mV) to 18 V High output source and sink current +10 mA and −5 mA, respectively Wide temperature range: −40°C to +125°CADR441-EP supports defense and aerospace applications (AQEC standard) Download ADR441-EP Data Sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request V62/18620 DSCC Drawing Number

Ultra-Low-Noise, High-Accuracy 2.5V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours

Ultra-Low-Noise, High-Accuracy 4.096V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours

Ultra-Low-Noise, High-Accuracy 5.0V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours

Precision Micropower Shunt Mode Voltage Reference Applications (5.0 Vout) Features: Ultracompact SC70 and SOT-23 packages Low temperature coefficient: 75 ppm/°C (maximum) Pin compatible with LM4040/LM4050 Initial accuracy: ±0.1% No external capacitor required Wide operating current range: 50 µA to 15 mA Extended temperature range: −40°C to +125°C Qualified for automotive applications

Silicon, SPDT Switch, Nonreflective, 100 MHz to 13 GHz Features: Nonreflective 50 Ω design Low insertion loss: 0.8 dB at 8 GHz High isolation: 45 dB at 8 GHz High input linearity P1dB: 39 dBm IP3: 60 dBm typical High power handling 35 dBm insertion loss path 27 dBm hot switching ESD rating: 2 kV (Class 2) HBM No low frequency spurious 0.05 dB RF settling time: 375 ns 0.1 dB RF settling time: 300 ns 16-lead, 3 mm × 3 mm LFCSP Pin-compatible with HMC1118, low frequency cutoff version

Silicon SPDT SwitchReflective, 100 MHz to 44 GHz Features: Ultrawideband frequency range: 100 MHz to 44 GHz Reflective design Low insertion loss with impedance match 1.0 dB typical to 18 GHz 1.4 dB typical to 40 GHz 1.7 dB typical to 44 GHz Low insertion loss without impedance match 0.9 dB typical to 18 GHz 1.7 dB typical to 40 GHz 2.1 dB typical to 44 GHz High input linearity P1dB: 27.5 dBm typical IP3: 50 dBm typical High RF input power handling Through path: 27 dBm Hot switching: 27 dBm No low frequency spurious RF settling time (50% VCTRL to 0.1 dB of final RF output): 17 ns 12-terminal, 2.25 mm × 2.25 mm LGA package Pin compatible with the ADRF5025 low frequency cutoff version ADRF5024-EP Supports defense and aerospace applications (AQEC standard) Download ADRF5024-EP data sheet (pdf) Military temperature range (−55°C to +105°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request

Silicon SPDT SwitchReflective, 100 MHz to 44 GHz Features: Ultrawideband frequency range: 100 MHz to 44 GHz Reflective design Low insertion loss with impedance match 1.0 dB typical to 18 GHz 1.4 dB typical to 40 GHz 1.7 dB typical to 44 GHz Low insertion loss without impedance match 0.9 dB typical to 18 GHz 1.7 dB typical to 40 GHz 2.1 dB typical to 44 GHz High input linearity P1dB: 27.5 dBm typical IP3: 50 dBm typical High RF input power handling Through path: 27 dBm Hot switching: 27 dBm No low frequency spurious RF settling time (50% VCTRL to 0.1 dB of final RF output): 17 ns 12-terminal, 2.25 mm × 2.25 mm LGA package Pin compatible with the ADRF5025 low frequency cutoff version ADRF5024-EP Supports defense and aerospace applications (AQEC standard) Download ADRF5024-EP data sheet (pdf) Military temperature range (−55°C to +105°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request

Silicon SPDT SwitchReflective, 100 MHz to 44 GHz Features: Ultrawideband frequency range: 100 MHz to 44 GHz Reflective design Low insertion loss with impedance match 1.0 dB typical to 18 GHz 1.4 dB typical to 40 GHz 1.7 dB typical to 44 GHz Low insertion loss without impedance match 0.9 dB typical to 18 GHz 1.7 dB typical to 40 GHz 2.1 dB typical to 44 GHz High input linearity P1dB: 27.5 dBm typical IP3: 50 dBm typical High RF input power handling Through path: 27 dBm Hot switching: 27 dBm No low frequency spurious RF settling time (50% VCTRL to 0.1 dB of final RF output): 17 ns 12-terminal, 2.25 mm × 2.25 mm LGA package Pin compatible with the ADRF5025 low frequency cutoff version ADRF5024-EP Supports defense and aerospace applications (AQEC standard) Download ADRF5024-EP data sheet (pdf) Military temperature range (−55°C to +105°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request

Silicon SPDT Switch, Reflective, 9 kHz to 44 GHz Features: Ultrawideband frequency range: 9 kHz to 44 GHz Reflective design Low insertion loss with impedance match 0.9 dB typical to 18 GHz 1.4 dB typical to 40 GHz 1.6 dB typical to 44 GHz Low insertion loss without impedance match 0.9 dB typical to 18 GHz 1.7 dB typical to 40 GHz 2.2 dB typical to 44 GHz High input linearity P1dB: 27.5 dBm typical IP3: 50 dBm typical High RF input power handling Through path: 27 dBm Hot switching: 27 dBm No low frequency spurious RF settling time (50% VCTL to 0.1 dB final RF output): 3.4 μs 12-terminal, 2.25 mm × 2.25 mm LGA package Pin compatible with the ADRF5024 fast switching version

Silicon SPDT Switch, Nonreflective, 9 kHz to 44 GHz Features: Ultrawideband frequency range: 9 kHz to 44 GHz Nonreflective design Low insertion loss: 1.1 dB to 18 GHz 1.5 dB to 26 GHz 2.2 dB to 40 GHz 3.8 dB to 44 GHz High isolation: 53 dB to 18 GHz 48 dB to 26 GHz 48 dB to 40 GHz 43 dB to 44 GHz High input linearity: P1dB: 26 dBm typical IP3: 54 dBm typical High power handling: 24 dBm insertion loss path 24 dBm isolation path All off state control No low frequency spurious signals 0.1 dB RF settling time: 6.0 μs typical 20-terminal, 3 mm × 3 mm LGA package Pin compatible with ADRF5026, fast switching version

Silicon SPDT Switch, Reflective, 1 GHz to 60 GHz Features: Ultrawideband frequency range: 1 GHz to 60 GHz Reflective design Low insertion loss 1.4 dB typical up to 40 GHz 1.9 dB typical up to 55 GHz 2.0 dB typical up to 60 GHz High isolation 43 dB typical up to 40 GHz 36 dB typical up to 55 GHz 32 dB typical up to 60 GHz High input linearity P0.1dB: 24 dBm typical IP3: 45 dBm typical High RF power handling Through path: 24 dBm Hot switching path: 21 dBm CMOS/LVTTL compatible RF switching time: 15 ns RF settling time (50% VCTRL to 0.1 dB of RF output): TBD ns Dual supply operation: ±3.3 V 12 terminal, 2.5 mm × 2.5 mm, RoHS-compliant, land grid array (LGA) package

Nonreflective, 100 MHz to 44 GHz Silicon SP4T Switch Features: Ultrawideband frequency range: 100 MHz to 44 GHz Nonreflective 50 Ω design Low insertion loss: 1.8 dB up to 18 GHz 2.8 dB up to 40 GHz 3.2 dB up to 44 GHz High isolation: 50 dB at 18 GHz 39 dB at 40 GHz 35 dB at 44 GHz High input linearity: P0.1dB: 26 dBm typical IP3: 47 dBm typical High power handling 24 dBm through path 24 dBm terminated path All off state control Logic select control No low frequency spurs Settling time (0.1 dB final RF output): 30 ns 24-terminal, 3 mm × 3 mm land grid array (LGA) package Pin compatible with ADRF5043, low frequency cutoff version

100 MHz to 30 GHz, Silicon, SP4T Switch Features: Ultrawideband frequency range: 100 MHz to 30 GHz Nonreflective 50 Ω design Low insertion loss: 2.6 dB at 20 GHz to 30 GHz High isolation: 43 dB at 20 GHz to 30 GHz High input linearity P1dB: 28 dBm typical IP3: 50 dBm typical High power handling 24 dBm through path 24 dBm terminated path No low frequency spurious 0.1 dB settling time (50% VCTL to 0.1 dB of final RF output): 37 ns 24-terminal LGA package

9 kHz to 30 GHz, Silicon, SP4T Switch Features: Ultrawideband frequency range: 9 kHz to 30 GHz Nonreflective 50 Ω design Low insertion loss: 2.4 dB at 20 GHz to 30 GHz High isolation: 45 dB at 20 GHz to 30 GHz High input linearity P1dB: 28 dBm typical IP3: 50 dBm typical High power handling 24 dBm through path 24 dBm terminated path ESD rating: 1500 V HBM No low frequency spurious 0.1 dB settling time (50% VCTL to 0.1 dB final RF output): 6 µs 24-terminal LGA package

Silicon SP4T Switch, Reflective, 100 MHz to 44 GHz Features: Ultrawideband frequency range: 100 MHz to 44 GHz Reflective design Low insertion loss: 1.5 dB at 18 GHz 2.5 dB at 40 GHz 3.0 dB at 44 GHz High isolation: 46 dB at 18 GHz 33 dB at 40 GHz 31 dB at 44 GHz High input linearity: P0.1dB: 27.5 dBm typical  IP3: 50 dBm typical   High RF input power handling Through path: 27 dBm   Hot switching: 27 dBm No low frequency spurious 0.1 dB RF settling time: 50 ns   20-terminal, 3 mm × 3 mm, RoHS-compliant, LGA package  

Silicon SP4T Switch, Reflective, 100 MHz to 44 GHz Features: Ultrawideband frequency range: 100 MHz to 44 GHz Reflective design Low insertion loss: 1.5 dB at 18 GHz 2.5 dB at 40 GHz 3.0 dB at 44 GHz High isolation: 46 dB at 18 GHz 33 dB at 40 GHz 31 dB at 44 GHz High input linearity: P0.1dB: 27.5 dBm typical  IP3: 50 dBm typical   High RF input power handling Through path: 27 dBm   Hot switching: 27 dBm No low frequency spurious 0.1 dB RF settling time: 50 ns   20-terminal, 3 mm × 3 mm, RoHS-compliant, LGA package  

High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz Features: Reflective, 50 design Low insertion loss: 0.6 dB typical at 2.7 GHz High power handling at TCASE = 105°C Long-term (>10 years operation) Peak power: 43 dBm CW power: 38 dBm LTE power average (8 dB PAR): 35 dBm Single event (<10 sec operation) LTE power average (8 dB PAR): 41 dBm High linearity P0.1dB: 42.5 dBm typical IP3: 65 dBm typical at 2.0 GHz to 4.0 GHz ESD ratings HBM: 2 kV, Class 2 CDM: 1.25 kV Single positive supply: 5 V Positive control, CMOS/TTL compatible 16-lead, 3 mm × 3 mm LFCSP package