RF Amplifier 10 GHz gain block, Linr Drive/Gain Block

Attenuators 6-bit DAT with 0.25dB LSB, DC-6GHz

RF Switch ICs GaAs MMIC SP4T Non-Reflective Switch, DC

RF Switch ICs DC-6 GHZ Hi Isolation Switch

Digital to Analog Converters - DAC CMOS CONVERTER IC

The HMC401QS16G(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC401QS16G(E)?? ?integrates a resonator, negative resistance device, varactor diode and a divide-by-8 prescaler. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is -7 dBm typical from a 5V supply voltage. The voltage controlled oscillator is packaged in a low cost, surface mount 16 leaded QSOP package with an exposed base for improved RF and thermal performance.Applications Point-to-Point Radios Point-to-Multi-Point Radios / LMDS VSAT

The HMC358MS8G(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC358MS8G(E) integrates resonators, negative resistance devices, varactor diodes, and buffer amplifiers. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is 11 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost, surface mount 8 lead MSOP package with an exposed base for improved RF and thermal performance.APPLICATIONS UNII & Point-to-Point Radios 802.11a & HiperLAN WLAN VSAT Radios

The HMC408LP3(E) is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMIC which offers +30 dBm P1dB. The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external components. Vpd can be used for full power down or RF output power/current control. The amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performance.Applications 802.11a & HiperLAN WLAN UNII & Pt-to-Pt / Multi-Point Radios Access Point Radios

The HMC416LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 2.75 to 3.0 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4.5 dBm typical from a single supply of 3V @ 37 mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4?4 mm surface mount package.APPLICATIONS Wireless Infrastructure Industrial Controls Test Equipment Military

The HMC430LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. The VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 2 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS 802.11a & HiperLAN WLAN? VSAT Radios? UNII & Point-to-Point Radios

The HMC455LP3(E) is a high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1?2 watt MMIC amplifier operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3(E) ideal driver amplifier for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance.Applications Multi-Carrier Systems? GSM, GPRS & EDGE? CDMA & WCDMA? PHS

The HMC695LP4(E) are active miniature x4 frequency multipliers utilizing InGaP GaAs HBT technology in 4x4 mm leadless surface mount packages. Power output is +7 dBm typical from a +5V supply voltage and varies little vs. input power, temperature and supply voltage. Suppression of undesired fundamental and sub-harmonics is >25 dBc typical with respect to output signal level. The low additive SSB phase noise of -140 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance. The HMC695LP4(E) are ideal for use in LO multiplier chains allowing reduced parts count vs. traditional approaches.APPLICATIONS Fiber Optic Applications Point-to-Point Radios Military Radar

The HMC533LP4(E) are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC533LP4(E) integrate resonators, negative resistance devices, varactor diodes and feature a divide-by-16 output. T he VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +12 dBm typical from a +5V supply voltage. Prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package.APPLICATIONS VSAT Radio Point-to-Point/Multi-point Radio Test Equipment & Industrial Controls Military End-Use Automotive Radar