The HMC435AMS8G(E) is a non-reflective DC to4 GHz GaAs MESFET SPDT switch in a low cost 8lead MSOP8G surface mount package with exposedground paddle. The switch is ideal for cellular/3G andWiMAX/4G applications yielding up to 60 dB isolation,low 0.8 dB insertion loss and +50 dBm input IP3. Powerhandling is excellent up through the 3.8 GHz WiMAXband with the switch offering a P1dB compression of+30 dBm. On-chip circuitry allows positive voltagecontrol of 0/+5 Volts at very low DC currents.APPLICATIONS Basestations & Repeaters Cellular/3G and WiMAX/4G Infrastructure and Access Points CATV/CMTS Test Instrumentation

The HMC388LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 3.15 to 3.4 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4.9 dBm typical from a single supply of 3V @ 39mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4?4 mm surface mount package.APPLICATIONS Wireless Local Loop (WLL) VSAT & Microwave Radio Test Equipment & Industrial Controls Military

The HMC389LP4 & HMC389LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. Covering 3.35 to 3.55 GHz, the VCO's phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator's monolithic structure. Power output is 4.7 dBm typical from a single supply of 3V @ 41mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4?4 mm surface mount package.APPLICATIONS Wireless Local Loop (WLL) VSAT & Microwave Radio Test Equipment & Industrial Controls Military

The HMC391LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. Covering 3.9 to 4.45 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 5 dBm typical from a single supply of +3V @ 30mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4?4 mm surface mount package.APPLICATIONS VSAT & Microwave Radio Radio Altimetry Test Equipment & Industrial Controls Military

The HMC431LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. The VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 2 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS 802.11a & HiperLAN WLAN? VSAT Radios? UNII & Point-to-Point Radios

The HMC466LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 6.1 to 6.72 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4.5 dBm typical from a single supply of 3V @ 31mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS VSAT & Microwave Radio? CATV & Broadcast Relays? Test Equipment & Industrial Controls? Military

The HMC506LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 7.8 to 8.7 GHz, the VCO?s phase noise performance is excellent over temperature, shock and vibration due to the oscillator?s monolithic structure. Power output is +14 dBm typical from a single supply of +3V @ 77 mA. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package.APPLICATIONS VSAT Radio? Point-to-Point/Multi-point Radio? Test Equipment & Industrial Controls? Military End-Use

The HMC532LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 7.1 to 7.9 GHz, the VCO?s phase noise performance is excellent over temperature, shock and vibration due to the oscillator?s monolithic structure. Power output is +14 dBm typical from a single supply of +3V @ 85 mA. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package.APPLICATIONS VSAT Radio? Point-to-Point/Multi-point Radio Test Equipment & Industrial Controls? Military End-Use

The HMC438MS8G & HMC438MS8GE are low noise?Divide-by-5 Static Dividers utilizing InGaP GaAs?HBT technology in low cost 8 lead surface mount?plastic packages. This device operates from DC?(with a square wave input) to 7 GHz input frequency?from a single +5V DC supply. The low additive SSB phase noise of -153 dBc/Hz at 100 kHz offset helps?the user maintain good system noise performance.Applications UNII, Point-to-Point & VSAT Radios? 802.11a & HiperLAN WLAN? Fiber Optic? Cellular / 3G Infrastructure

The HMC370LP4(E) is an active miniature x4 frequency multiplier utilizing InGaP GaAs HBT technology in a 4x4 mm leadless surface mount package. Power output is 0 dBm typical from a 5V supply voltage and varies little vs. input power, temperature and supply voltage. Suppression of undesired fundamental and sub-harmonics is >22 dBc typical with respect to output signal level. The low additive SSB phase noise of -140 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance. The HMC370LP4(E) is ideal for use in LO multiplier chains allowing reduced parts count vs. traditional approaches.APPLICATIONS Point-to-Point & VSAT Radios Fiber Optic Military

The HMC444LP4(E) is an active miniature x8 frequency multiplier utilizing InGaP GaAs HBT technology in 4x4 mm leadless surface mount package. Power output is +6 dBm typical from a 5V supply voltage and varies little vs. input power, temperature and supply voltage.Suppression of undesired fundamental and sub-harmonics is >25 dBc typical with respect to output signal level. The low additive SSB phase noise of -136 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance. The HMC444LP4(E) is ideal for use in LO multiplier chains allowing reduced parts count vs. traditional approaches.APPLICATIONS Fiber Optic Point-to-Point Radios Military Radar

The HMC493LP3(E) is a low noise Divide-by-4 Static Divider utilizing InGaP GaAs HBT technology packaged in leadless 3x3 mm QFN surface mount plastic package. This device operates from DC (with a square wave input) to 18 GHz input frequency from a single +5.0V DC supply. The low additive SSB phase noise of -150 dBc/Hz at 100 kHz offset helps the user maintain excellent system noise performance.APPLICATIONS Point-to-Point / Multi-Point Radios VSAT Radios Fiber Optic Test Equipment Military

The HMC369LP3(E) is an active miniature x2 frequency multiplier utilizing InGaP GaAs HBT technology in a 3x3 mm leadless QFN surface mount package. Power output is +4 dBm typical from a single +5V supply and varies little vs. input power, temperature and supply voltage. Suppression of undesired fundamental and sub-harmonics is 30 dBc typical with respect to output signal level.The low additive SSB phase noise of -142 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance. The HMC369LP3(E) is ideal for use in LO multiplier chains allowing reduced parts count versus traditional approaches. The HMC369LP3(E) is also useful for OC-192 clock recovery. The application of 10 GBPS data to the input generates a -7 dBm clock tone at the output with spurious signals suppressed by 25 dB.APPLICATIONS OC-192 Clock Recovery Microwave Radio & VSAT Military Radios, Radar & ECM Test Instrumentation

The HMC454ST89(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1?2 watt MMIC amplifier operating between 0.4 and 2.5 GHz. Packaged in a low cost industry standard SOT89, the amplifier gain is typically 17.8 dB from 0.8 to 1.0 GHz and 12.5 dB from 1.8 to 2.2 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +40 dBm at 0.9 GHz or +42 dBm at 2.0 GHz. The high output IP3 and PAE makes the HMC454ST89(E) an ideal driver amplifier for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL

The HMC586LC4B is a wideband GaAs InGaP Voltage Controlled Oscillator which incorporates the resonator, negative resistance device, and varactor diode. Output power and phase noise performance are excellent over temperature due to the oscillator?s monolithic construction. The Vtune port accepts an analog tuning voltage from 0 to +18V. The HMC586LC4B VCO operates from a single +5V supply, consumes only 55 mA of current, and is housed in a RoHS compliant SMT package. This wideband VCO uniquely combines the attributes of ultra small size, low phase noise, low power consumption, and wide tuning range.APPLICATIONS Industrial/Medical Equipment Test & Measurement Equipment Military Radar, EW & ECM

The HMC587LC4B is a wideband GaAs InGaP Voltage Controlled Oscillator which incorporates the resonator, negative resistance device, and varactor diode. Output power and phase noise performance are excellent over temperature due to the oscillator?s monolithic construction. The Vtune port accepts an analog tuning voltage from 0 to +18 volts. The HMC587LC4B VCO operates from a single +5V supply, consumes only 55 mA of current, and is housed in a RoHS compliant SMT package. This wideband VCO uniquely combines the attributes of ultra small size, low phase noise, low power consumption, and wide tuning range.APPLICATIONS Industrial/Medical Equipment Test & Measurement Equipment Military Radar, EW & ECM

The HMC733LC4B is a wideband MMIC Voltage Controlled Oscillator which incorporates the resonator, negative resistance device, and varactor diode. Output power and phase noise performance are excellent over temperature due to the oscillator?s monolithic construction. The Vtune port accepts an analog tuning voltage from 0 to +22V. The HMC733LC4B VCO operates from a single +5V supply, consumes only 70 mA of current, and is housed in a RoHS compliant SMT package. This wideband VCO uniquely combines the attributes of ultra small size, low phase noise, low power consumption, and wide tuning range.APPLICATIONS Industrial/Medical Equipment Test & Measurement Equipment Military Radar, EW & ECM

The HMC453QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL

The HMC453ST89(E) is a high dynamic range GaAs InGaP HBT 1.6 Watt MMIC power amplifier operating from 0.4 to 2.2 GHz and packaged in industry standard SOT89 packages. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +49 dBm at 2.1 GHz. The high output IP3 and PAE make the HMC453ST89(E) ideal power amplifier for Cellular/ PCS/3G and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless

The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.Applications CDMA & W-CDMA? GSM, GPRS & Edge? Base Stations & Repeaters