The ADL5246 is a high performance, low noise variable gain amplifier (VGA) optimized for multistandard base station receivers and point to point receive (Rx) and transmit (Tx) applications. The low noise figure and excellent linearity performance allow the device to be used in a variety of applications.The device consists of a low noise amplifier, a high linearity VGA, and a ? W output driver stage. The variable attenuator networks are optimized to provide high linearity performance over the 45 dB gain control range. Gain is set using a unipolar control voltage from 0 V to 3.3 V. The output stage of the ADL5246 is an externally tuned ? W driver amplifier, which allows the device to be optimized anywhere between the 0.6 GHzto 3 GHz range, with an average tuning bandwidth of 200 MHz wide. An external filter can be used between the VGA and the final driver amplifier. The ADL5246 can be biased between 3.3 V and 5 V to tradeoff between performance and power consumption.The ADL5246 is fabricated on an advanced GaAs process. The device is available in a 32-lead, RoHS-compliant, 5 mm ? 5 mm LFCSP and thermally rated to operate over the ?40?C to +105?C temperature range.APPLICATIONS Multistandard radio receivers Point to point Rx and Tx Instrumentation Military and aerospace

The ADL5310 is a low-cost dual logarithmic amplifier that converts input current over a wide dynamic range to a linear-in-dB output voltage. It is optimized for the determination of optical power in wide-ranging optical communication system applications including control circuitry for lasers, optical switches, attenuators, and amplifiers, as well as general system monitoring. The device is equivalent to a dual AD8305 with enhanced dynamic range (120 dB). While the ADL5310 contains two independent signal channels with individually-configurable transfer function constants (slope and intercept), internal bias circuitry is shared between channels for improved power consumption and channel matching. Dual converters in a single compact LFCSP package yield space-efficient solutions for measuring gain or attenuation across optical elements. Only a single supply is required, while optional dual supply operation offers added flexibility.The ADL5310 employs an optimized translinear structure, which utilizes the accurate logarithmic relationship between a bipolar transistor's base-emitter voltage and collector current, with appropriate scaling by precision currents to compensate the inherent temperature dependence. Input and reference current pins sink current ranging from 3 nA to 3 mA (limited to ?60 dB between input and reference) into a fixed voltage defined by the VSUM potential, which is internally set to 500 mV but may be externally-grounded for dual-supply operation and additional applications requiring voltage inputs.

The ADL5324 incorporates a dynamically adjustable biasing circuit that allows for the customization of OIP3 and P1dB performance from 3.3 V to 5 V, without the need for an external bias resistor. This feature gives the designer the ability to tailor driver amplifier performance to the specific needs of the design. This feature also creates the opportunity for dynamic biasing of the driver amplifier where a variable supply is used to allow for full 5 V biasing under large signal conditions, and then reduced supply voltage when signal levels are smaller and lower power consumption is desirable. This scalability reduces the need to evaluate and inventory multiple driver amplifiers for different output power requirements, from 25 dBm to 29 dBm output power levels.The ADL5324 is also rated to operate across the wide temperature range of ?40?C to +105?C for reliable performance in designs that experience higher temperatures, such as power amplifiers. The ? W driver amplifier also covers the wide frequency range of 400 MHz to 4000 MHz, and only requiresa few external components to be tuned to a specific band within that wide range. This high performance broadband RF driver amplifier is well suited for a variety of wired and wireless applications, including cellular infrastructure, ISM band power amplifiers, defense equipment, and instrumentation equipment. A fully populated evaluation board is available.The ADL5324 also delivers excellent ACPR vs. output power and bias voltage. The driver can deliver greater than 17 dBm of output power at 2140 MHz, while achieving an ACPR of ?55 dBc at 5 V. If the bias is reduced to 3.3 V, the ?55 dBc ACPR output power only minimally reduces to 15 dBm.Applications Wireless infrastructure Automated test equipment ISM/AMR applications

The ADL5331 is a high performance, voltage-controlledvariable gain amplifier/attenuator for use in applications with frequencies up to 1.2 GHz. The balanced structure of the signal path maximizes signal swing, eliminates common-mode noiseand minimizes distortion while it also reduces the risk of spurious feed-forward at low gains and high frequencies caused by parasitic coupling. The 50 ? differential input system converts the applieddifferential voltage at INHI and INLO to a pair of differentialcurrents with high linearity and good common-mode rejection. The signal currents are then applied to a proprietary voltage-controlled attenuator providing precise definition of the overall gain under the control of the linear-in-dB interface. The GAIN pin accepts a voltage from 0 V at a minimum gain to 1.4 V at afull gain with a 40 mV/dB scaling factor over most of the range.The output of the high accuracy wideband attenuator is appliedto a differential transimpedance output stage. The output stageprovides a differential output at OPHI and OPLO, which must be pulled up to the supply with RF chokes or a center-tapped balun.The ADL5331 consumes 240 mA of current including the output pins and operates off a single supply ranging from 4.75 V to 5.25 V. A power-down function is provided by applying alogic low input on the ENBL pin. The current consumption inpower-down mode is 250 ?A.The ADL5331 is fabricated on an Analog Devices, Inc., proprietary high performance, complementary bipolar IC process.The ADL5331 is available in a 24-lead (4 mm ? 4 mm), Pb-freeLFCSP package and is specified for operation from ambient temperatures of ?40?C to +85?C. An evaluation board is also available.Applications Transmit and receive power control at RF and IF CATV distribution

The ADL5382 is a broadband quadrature I-Q demodulator that covers an RF input frequency range from 700 MHz to 2.7 GHz. With a NF = 14 dB, IP1dB = 14.7 dBm, and IIP3 = 33.5 dBm at 900 MHz, the ADL5382demodulator offers outstanding dynamic range suitable for the demanding infrastructure direct-conversion requirements. The differential RF inputs provide a well-behaved broadband input impedance of 50 ? and are best driven from a 1:1 balun for optimum performance.Excellent demodulation accuracy is achieved with amplitude and phase balances ~0.05 dB and ~0.2?, respectively. The demodulated in-phase (I) and quadrature (Q) differential outputs are fully buffered and provide a voltage conversion gain of ~4 dB. The buffered baseband outputs are capable of driving a 2 Vp-p differential signal into 200 ?.The fully balanced design minimizes effects from second-order distortion. The leakage from the LO port to the RF port is 60 dBm.The ADL5382 operates off a single 4.75 V to 5.25 V supply. The supply current is adjustable with an external resistor from the BIAS pin to ground.The ADL5382 is fabricated using the Analog Devices, Inc., advanced Silicon-Germanium bipolar process and is available in a 24-lead exposed paddle LFCSP. Performance is specified over a -40?C to +85?C temperature range.APPLICATIONS QAM/QPSK demodulator W-CDMA/CDMA/CDMA2000/GSM Point-to-(Multi)Point Radio WiMax

The ADL5390 vector multiplier consists of a matched pair of broadband variable gain amplifiers whose outputs are summed. The separate gain controls for each amplifier are linear-in-magnitude. If the two input RF signals are in quadrature, the vector multiplier can be configured as a vector modulator or as a variable attenuator/phase shifter by using the gain control pins as Cartesian variables. In this case, the output amplitude can be controlled from a maximum of +5 dB to less than -30 dB, and the phase can be shifted continuously over the entire 360? range. Since the signal paths are linear, the original modulation on the inputs is preserved. If the two signals are independent, then the vector multiplier can function as a 2:1 multiplexer or can provide fading from one channel to another.The ADL5390 operates over a wide frequency range of 20 MHz to 2400 MHz. For a maximum gain setting on one channel at 380 MHz, the ADL5390 delivers an OP1dB of 11 dBm, an OIP3 of 24 dBm, and an output noise floor of -148 dBm/Hz. The gain and phase matching between the two VGAs is better than 0.5 dB and 1?, respectively, over most of the operating range.The ADL5390 is fabricated on Analog Devices' proprietary, high performance 25 GHz SOI complementary bipolar IC process. It is available in a 24-lead, Pb-free CSP package and operates over a -40?C to +85?C temperature range. Evaluation boards are available.APPLICATIONS PA linearization and predistortion Amplitude and phase modulation Variable matched attenuator and/or phase shifter Cellular base stations Radio links Fixed wireless access Broadband/CATV RF/IF analog multiplexerAVAILABILITYSamples, part number ADL5390ACPZ, and an evaluation board, part number ADL5390-EVAL, are available.COMPANION PRODUCTSAD8302 - LF to 2.7GHz RF/IF Gain Phase DetectorAD8340 - RF Vector Modulator 700MHz to 1000MHzAD8341 - RF Vector Modulator 1.5GHz to 2.4GHz

The ADL5504 is a TruPwr? mean-responding (true rms) power detector for use in high frequency receiver and transmitter signal chains from 450 MHz to 6000 MHz. Requiring only a single supply between 2.5 V and 3.3 V, the detector draws less than 1.8 mA. The input is internally ac-coupled and has a nominal input impedance of 500 ?. The rms output is a linear-responding dc voltage with a conversion gain of 1.87 V/V rms at 900 MHz.The ADL5504 is a highly accurate, easy to use means of determining the rms of complex waveforms. It can be used for power measurements of both simple and complex waveforms but is particularly useful for measuring high crest factor (high peak-to-rms ratio) signals, such as W-CDMA, CDMA2000, WiMAX, WLAN, and LTE waveforms.The on-chip modulation filter provides adequate averaging for most waveforms. For more complex waveforms, an external capacitor at the FLTR pin can be used for supplementary signal demodulation. An on-chip, 100 ? series resistance at the output, combined with an external shunt capacitor, creates a low-pass filter response that reduces the residual ripple in the dc output voltage.The ADL5504 offers excellent temperature stability across a 30 dB range and near 0 dB measurement error across temperature over the top portion of the dynamic range. In addition to its temperature stability, the ADL5504 offers low process variations that further reduce calibration complexity.The power detector operates from ?40?C to +85?C and is available in a 6-ball, 0.8 mm ? 1.2 mm, wafer level chip scale package. It is fabricated on a high fT silicon BiCMOS process.Applications Power measurement of W-CDMA, CDMA2000, QPSK-/QAM-based OFDM (LTE and WiMAX), and other complex modulation waveforms RF transmitter or receiver power measurement

The ADL5511 is an RF envelope and TruPwr? rms detector. The envelope output voltage is presented as a voltage that is proportional to the envelope of the input signal. The rms output voltage is independent of the peak-to-average ratio of the input signal.The rms output is a linear-in-V/V voltage with a conversion gain of 1.9 V/V rms at 900 MHz. The envelope output has a conversion gain of 1.46 V/V at 900 MHz and is referenced to an internal 1.1 V reference voltage, which is available on the EREF pin.The ADL5511 can operate from dc to 6 GHz on signals with envelope bandwidths up to 130 MHz.The extracted envelope can be used for RF power amplifier (PA) linearization and efficiency enhancements and the rms output can be used for rms power measurement. The high rms accuracy and fast envelope response are particularly useful for envelope detection and power measurement of broadband, high peak-to-average signals that are used in CDMA2000, W-CDMA, and LTE systems.The ADL5511 operates from ?40?C to +85?C and is available in a 16-lead, 3 mm ? 3 mm LFCSP package.APPLICATIONS RMS power and envelope detection of W-CDMA, CDMA2000, LTE, and other complex waveforms Drain modulation based power amplifier linearization Power amplifier linearization employing envelope-tracking methods

The ADL5530 is a broadband, fixed-gain, linear amplifier that operates at frequencies up to 1000 MHz. The device can be used in a wide variety of wired and wireless devices, including cellular, broadband, CATV, and LMDS/MMDS applications.The ADL5530 provides a gain of 16.5 dB, which is stable over frequency, temperature, power supply, and from device to device. It achieves an OIP3 of 37 dBm with an output compression point of 21.8 dB and a noise figure of 3 dB.This amplifier is single-ended and internally matched to 50 ? with an input return loss of 11 dB. Only input/output ac-coupling capacitors, a power supply decoupling capacitor, and an external inductor are required for operation.The ADL5530 operates with supply voltages of 3 V or 5 V with a supply current of 110 mA.The ADL5530 is fabricated on a GaAs pHEMPT process. The device is packaged in a 3 mm ? 2 mm LFCSP that uses an exposed paddle for excellent thermal impedance. It operates from ?40?C to +85?C. A fully populated evaluation board is also available.Applications VCO buffers General purpose Tx/Rx amplification

The ADL5536 is a 20 dB linear amplifier that operates atfrequencies up to 1 GHz. The device can be used in a widevariety of cellular, CATV, military, and instrumentationequipment.The ADL5536 provides the highest dynamic range availablefrom an internally matched IF gain block. This is accomplishedby providing extremely low noise figures and very high OIP3specifications simultaneously across the entire 1 GHz frequencyrange. The ADL5536 also provides extremely flat gain and P1dBover frequency, which are stable over temperature, power supply,and from device to device.The device is internally matched to 50 ? at the input and output,making the ADL5536 very easy to implement in a wide varietyof applications. Only input/output ac coupling capacitors, powersupply decoupling capacitors, and an external inductor arerequired for operation.The ADL5536 is fabricated on a GaAs HBT process and has anESD rating of ?2 kV (Class 2). The device is assembled in anMSL-1 rated SOT-89 package that uses an exposed paddle forexcellent thermal impedance.The ADL5536 consumes only 105 mA on a single 5 V supplyand is fully specified for operation from ?40?C to +85?C.The ADL5536 is also pin-compatible with the 16 dB gainADL5535. Fully populated evaluation boards are availablefor each amplifier.

The ADL5541 is a broadband 15 dB linear amplifier that operates at frequencies up to 6 GHz. The device can be used in a wide variety of CATV, cellular, and instrumentation equipment. The ADL5541 provides a gain of 15 dB, which is stable over frequency, temperature, power supply, and from device to device. The device is internally matched to 50 ? with an input return loss of 10 dB or better up to 6 GHz. Only input/output ac coupling capacitors, power supply decoupling capacitors, and an external inductor are required for operation. The ADL5541 is fabricated on an InGaP HBT process and has an ESD rating of 1 kV (Class 1C). The device is packaged in a 3 mm ? 3 mm LFCSP that uses an exposed paddle for excellent thermal impedance. The ADL5541 consumes 90 mA on a single 5 V supply and is fully specified for operation from ?40?C to +85?C. A fully populated RoHS-compliant evaluation board is available. The ADL5542 is a companion part that offers a gain of 20 dB in a pin-compatible package.?

The ADL5723 is a narrow-band, high performance, low noise amplifier (LNA) targeting microwave radio link receiver designs. The monolithic silicon germanium (SiGe) design is optimized for microwave radio link bands ranging from 10.1 GHz to 11.7 GHz. The unique design offers a single-ended 50 ? input impedance and provides a 100 ? balanced differential output that is ideal for driving Analog Devices, Inc., differential downconverters and radio frequency (RF) sampling analog-to-digital converters (ADCs). This LNA provides noise figure performance that, in the past, required more expensive three-five (III-V) compounds process technology to achieve.The ADL5721 and ADL5723 to ADL5726 family of narrow-band LNAs are each packaged in a tiny, thermally enhanced, 2.00 mm ?2.00 mm LFCSP package. The ADL5721 and ADL5723 to ADL5726 family operates over the temperature range of ?40?C to +85?C.Applications Point to point microwave radios Instrumentation Satellite communications (SATCOM) Phased arrays

The ADL5726 is a narrow-band, high performance, low noise amplifier (LNA) targeting microwave radio link receiver designs. The monolithic silicon germanium (SiGe) design is optimized for microwave radio link bands ranging from 21.2 GHz to 23.6 GHz. The unique design offers a single-ended 50 ? input impedance and provides a 100 ? balanced differential output that is ideal for driving Analog Devices, Inc., differential downconverters and radio frequency (RF) sampling analog-to-digital converters (ADCs). This LNA provides noise figure performance that, in the past, required more expensive three-five (III-V) compounds process technology to achieve.The ADL5721 and ADL5723 to ADL5726 family of narrow-band LNAs are each packaged in a tiny, thermally enhanced, 2.00 mm ? 2.00 mm LFCSP package. The ADL5721 and ADL5723 to ADL5726 family operates over the temperature range of ?40?C to +85?C.Applications Point to point microwave radios Instrumentation Satellite communications (SATCOM) Phased arrays

The ADL8150 is a self biased gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), heterojunction bipolar transistor (HBT), low phase noise amplifier that operates from 6 GHz to 14 GHz. The amplifier provides 12 dB of typical signal gain, 18 dBm output power at 1 dB gain compression (OP1dB), and a typical output third-order intercept (OIP3) of 30 dBm. The amplifier requires 74 mA from a 5 V collector supply voltage. The ADL8150 also features inputs and outputs (I/Os) that are internally matched to 50 ?, and facilitates integration into multichip modules (MCMs). Note that throughout the data sheet, multifunction pins, such as RFOUT/VCC, are referred to either by the entire pin name or by a single function of the pin, for example, RFOUT, when only that function is relevant.Applications Military and space Test instrumentation Communications

The ADM7151 is a low dropout (LDO) linear regulator that operates from 4.5 V to 16 V and provides up to 800 mA of output current. Using an advanced proprietary architecture, it provides high power supply rejection (>90 dB from 1 kHz to 1 MHz), ultralow noise (1.7 nV?Hz from 10 kHz to 1 MHz), and excellent line and load transient response with a 10 ?F ceramic output capacitor. The output voltage can be set to any voltage between 1.5 V and 5.1 V with two resistors.The ADM7151 is available in two models that optimize power dissipation and PSRR performance as a function of input and output voltage. See Table 6 and Table 7 for selection guides.The ADM7151 regulator output noise is 1.0 ?V rms from 100 Hz to 100 kHz, and the noise spectral density is 1.7 nV/?Hz from 10 kHz to 1 MHz.The ADM7151 is available in 8-lead, 3 mm ? 3 mm LFCSP and 8-lead SOIC packages, making it not only a very compact solution, but also providing excellent thermal performance for applications requiring up to 800 mA of output current in a small, low profile footprint.ADM7151 is an adjustable Vout device. For fixed Vout version of the ADM7151, see the ADM7150.Applications Regulated power noise sensitive applications RF mixers, phase-locked loops (PLLs), voltage-controlled oscillators (VCOs), and PLLs with integrated VCOs Clock distribution circuits Ultrasound and other imaging applications High speed RF transceivers High speed, 16-bit or greater ADCs Communications and infrastructure Cable digital-to-analog converter (DAC) drivers

The ADM8845 uses charge pump technology to provide thepower required to drive up to six LEDs. The LEDs are used forbacklighting a color LCD display, having regulated constant current for uniform brightness intensity. The main display canhave up to four LEDs, and the sub display can have one or two LEDs. The digital CTRL1 and CTRL2 input control pins controlthe shutdown operation and the brightness of the main and subdisplays.To maximize power efficiency, the charge pump can operate ina 1?, 1.5?, or 2? mode. The charge pump automaticallyswitches between 1?/1.5?/2? modes, based on the input voltage,to maintain sufficient drive for the LED anodes at the highestpower efficiency. Improved brightness matching of the LEDs is achieved by afeedback pin to sense individual LED current with a maximum matching accuracy of 1%.Applications Cellular phones with main and sub displays White LED backlighting Camera flash/strobes and movie lights Micro TFT color displays DSC PDAs

The ADMV1018 is a silicon germanium (SiGe), microwave, upconverter and downconverter optimized for 5G radio designs operating in the 24.0 GHz to 29.5 GHz frequency range.The upconverter offers two modes of frequency translation. The device is capable of direct conversion to RF from differential baseband inphase/quadrature (I/Q) input signals, as well as single-sideband upconversion from complex intermediate frequency (IF) inputs. The differential baseband I/Q input path can be disabled, and modulated, single-ended, complex IF signals from 2 GHz to 9.5 GHz can be fed to the IF path. These signals can then be upconverted to 24.0 GHz to 29.5 GHz while rejecting the unwanted sideband by typically greater than 25 dBc. The serial port interface (SPI) provides adjustment of the quadrature phase to allow optimum sideband rejection. In addition, the SPI interface allows powering down the output envelope detector to reduce power consumption when carrier feedthrough optimization is not necessary.The downconverter offers two modes of frequency translation. The device is capable of direct quadrature demodulation to differential baseband I/Q output signals, as well as image rejection downconversion to a single-ended complex IF output carrier frequency. The I/Q baseband output common-mode voltage is programmable between 0.75 V and 2.15 V. The SPI provides fine adjustment of the quadrature phase to optimize I/Q demodulation performance. Alternatively, the baseband I/Q outputs can be disabled, and the I/Q signals can be passed through an on-chip, active balun to provide two, single-ended, complex IF outputs between 2 GHz and 9.5 GHz. When the device is used as an image rejecting downconverter, the unwanted image term is typically rejected to greater than 25 dBc. The ADMV1018 offers a square law power detector to allow monitoring of the power levels at the mixer inputs. The detector output provides closed-loop control of the RF digital step attenuator (DSA) via an external automatic gain control (AGC) loop.The ADMV1018 upconverter and downconverter is housed in a compact, thermally enhanced, 9 mm ? 8 mm, land grid array (LGA) package. This LGA package enables the ability to heat-sink the ADMV1018 from the top of the package for the most efficient thermal heatsinking. The ADMV1018 operates over the ?40?C to +95?C case temperature range.Throughout the figures in the data sheet, Rx means receiver and Tx means transmitter.APPLICATIONS5G applicationsPoint to point microwave radiosRadar and electronic warfare systemsInstrumentation and automatic test equipment (ATE)

The ADMV1139 is an silicon on isolator (SOI), microwave, upconverter and downconverter optimized for 5G radio designs operating in the 37 GHz to 48.2 GHz frequency range.Both upconverters and downconverters offer two modes of frequency translation. One mode is conversion from and/or to complex intermediate frequency (IF) signals, which then pass through an on-chip 90? IF hybrid, known as IF mode.The other mode is a direct conversion from and/or to single-ended or differential baseband inphase/quadrature (I/Q) inputs and outputs, known as baseband mode. The I/Q baseband output common-mode voltage is programmable between 0 V and 1.5 V. The SPI provides fine adjustment of the quadrature phase to optimize I/Q demodulation performance.When the device is used as an image rejecting downconverter, the unwanted image term is typically rejected to 26 dBc, before calibration. The ADMV1139 offers a square law power detector to allow monitoring of the power levels at the mixer inputs of the downconverter.The RF receive input, RF transmit output, and local oscillator (LO) interface are all single-ended and matched to 50 ?. The on-chip RF switch provides the option to combine the transmit and receive RF ports together for time division duplex (TDD) applications.The serial port interface (SPI) provides adjustment of the quadrature phase to allow optimum sideband rejection. In addition, the SPI allows powering down the output envelope detector to reduce power consumption when carrier feedthrough optimization is not necessary.The ADMV1139 upconverter and downconverter is housed in a compact, thermally enhanced, 6 mm ? 6.5 mm, ball grid array (BGA) package. This BGA package enables the ability to heat sink the ADMV1139 from the top of the package for the most efficient thermal heat sinking. The ADMV1139 operates over the ?40?C to +95?C TC range.APPLICATIONSMillimeter-wave 5G applicationsPoint to point microwave radiosRadar and electronic warfare systemsInstrumentation and automatic test equipment (ATE)

The ADMV1139 is an silicon on isolator (SOI), microwave, upconverter and downconverter optimized for 5G radio designs operating in the 37 GHz to 48.2 GHz frequency range.Both upconverters and downconverters offer two modes of frequency translation. One mode is conversion from and/or to complex intermediate frequency (IF) signals, which then pass through an on-chip 90? IF hybrid, known as IF mode.The other mode is a direct conversion from and/or to single-ended or differential baseband inphase/quadrature (I/Q) inputs and outputs, known as baseband mode. The I/Q baseband output common-mode voltage is programmable between 0 V and 1.5 V. The SPI provides fine adjustment of the quadrature phase to optimize I/Q demodulation performance.When the device is used as an image rejecting downconverter, the unwanted image term is typically rejected to 26 dBc, before calibration. The ADMV1139 offers a square law power detector to allow monitoring of the power levels at the mixer inputs of the downconverter.The RF receive input, RF transmit output, and local oscillator (LO) interface are all single-ended and matched to 50 ?. The on-chip RF switch provides the option to combine the transmit and receive RF ports together for time division duplex (TDD) applications.The serial port interface (SPI) provides adjustment of the quadrature phase to allow optimum sideband rejection. In addition, the SPI allows powering down the output envelope detector to reduce power consumption when carrier feedthrough optimization is not necessary.The ADMV1139 upconverter and downconverter is housed in a compact, thermally enhanced, 6 mm ? 6.5 mm, ball grid array (BGA) package. This BGA package enables the ability to heat sink the ADMV1139 from the top of the package for the most efficient thermal heat sinking. The ADMV1139 operates over the ?40?C to +95?C TC range.APPLICATIONSMillimeter-wave 5G applicationsPoint to point microwave radiosRadar and electronic warfare systemsInstrumentation and automatic test equipment (ATE)

The ADP2300?/ ADP2301 are compact, constant-frequency, current-mode, step-down dc-to-dc regulators with integrated power MOSFET. The ADP2300/ADP2301 devices run from any input voltage from 3.0 V up to 20 V, making them suitable for a wide range of applications. A precise, low voltage internal reference makes these devices ideal for generating a regulated output voltage as low as 0.8 V, with ?2% accuracy, for up to 1.2 A load current.There are two frequency options: the ADP2300 runs at 700 kHz and the ADP2301 runs at 1.4 MHz. These options allow users to make decisions based on the trade-off between efficiency and the size of the total solution. Current-mode control provides fast and stable line and load transient performance. Each ADP2300/ ADP2301 device includes an internal soft start to prevent inrush current at power up. Other key safety features include short-circuit protection, thermal shutdown (TSD) and input undervoltage lockout (UVLO). Precision enable pin threshold voltage allows ADP2300/ADP2301 to be easily sequenced from other input/ output supplies, or the enable pin can be used as a programmable UVLO input by using resistive divider.The ADP2300/ADP2301 are available in a 6-lead TSOT package and are rated for the ?40?C to +125?C junction temperature range.APPLICATIONS LDO replacement for digital load applications Intermediate power rail conversion Communications and networking Industrial and instrumentation Healthcare and Medical Consumer