Medium Power Amplifier SMT, 17 - 24 GHz Features: Output IP3: +36 dBm Saturated Power: +26 dBm @ 23% PAE Gain: 22 dB +5V @ 250 mA Supply 50 Ohm Matched Input/Output RoHS Compliant 4x4 mm SMT Package

Low Noise Amplifier SMT, 14 - 27 GHz Features: Noise Figure: 2 dB @ 20 GHz Gain: 19 dB P1dB Output Power: +17 dBm Supply Voltage: +4V @ 90 mA Output IP3: +26 dBm 50 matched Input / Output 24 Lead 4×4mm SMT Package: 16mm2

VCO SMT w/Buffer Amplifier, 7.8 - 8.7 GHz Features: Pout: +14 dBm Phase Noise: -103 dBc/Hz @100 KHz No External Resonator Needed Single Supply: +3V @ 77 mA QFN Leadless SMT Package, 16 mm2

VCO SMT with Fo/2 & Divide-by-4, 8.45 - 9.55 GHz Features: Dual Output: Fo = 8.45 - 9.55 GHz Fo/2 = 4.225 - 4.775 GHz Phase Noise: -116 dBc/Hz @100 kHz Typ. Pout: +13 dBm No External Resonator Needed QFN Leadless SMT Package, 25 mm2

Low Noise Amplifier SMT, 9 - 18 GHz Features: Noise Figure: 2 dB  Gain: 20 dB  OIP3: +25 dBm  Single Supply: +3V @ 65 mA  50 Ohm Matched Input/Output  RoHS Compliant 5×5 mm Package

Low Noise Amplifier SMT, 17 - 26 GHz Features: Noise Figure: 2.5 dB  Gain: 19 dB OIP3: +23 dBm Single Supply: +3V @ 67 mA 50 Ohm Matched Input/Output RoHS Compliant 4x4 mm Package

8.5 GHz to 13.5 GHz, GaAs, MMIC, I/Q Mixer Features: Downconverter, 8.5 GHz to 13.5 GHz Conversion loss: 9 dB typical Image rejection: 27.5 dBc typical LO to RF isolation: 39 dB typical Input IP3: 16 dBm typical Wide IF Bandwidth: dc to 3.5 GHz 3.9 mm × 3.9 mm, 24-terminal LCC package: 16 mm²

4 GHz to 8.5 GHz, GaAs, MMIC, I/Q Mixer Features: Passive: no dc bias required Conversion loss: 8 dB typical Input IP3: 20 dBm (typical) LO to RF isolation: 47 dB (typical) IF frequency range: dc to 3.5 GHz RoHS compliant, 24-terminal, 4 mm × 4 mm LCC package

Phase-Locked Oscillator SMT, 14.7 - 15.4 GHz Features: Pout: +9 dBm Phase Noise: -110 dBc/Hz @100 KHz Typ. Single Supply: +5V @ 340 mA, 12V @ 28 mA QFN Leadless SMT Package, 16 mm2

6 GHz to 14 GHz, GaAs, MMIC, Double-Balanced Mixer Features:Passive: no dc bias requiredConversion loss: 7 dB typical at 6 GHz to 11 GHzInput IP3: 18 dBm typical at 6 GHz to 11 GHzLO to RF isolation: 36 dB typicalWide IF bandwidth: dc to 5 GHzRoHS compliant, 12-terminal, 2.90 mm 2.90 mm LCC package

I/Q Receiver SMT, 17 - 21 GHz Features: Conversion Gain: 10 dB Image Rejection: 18 dB 2 LO to RF Isolation: 65 dB Noise Figure: 3 dB Input IP3: 2 dB RoHS Compliant 5x5 mm SMT Package

x2 Active Multiplier Chip, 18 - 29 GHz Fout Features: High Output Power: +17 dBm Low Input Power Drive: -2 to +6 dBm Fo Isolation: >20 dBc @ Fout= 24 GHz 100 kHz SSB Phase Noise: -132 dBc/Hz Single Supply: +5V @ 82 mA Die Size: 1.18 x 1.23 x 0.1 mm

x2 Active Multiplier SMT, 27 - 31 GHz Fout Features: Very High Output Power: +20 dBm Low Input Power Drive: -2 to +6 dBm Very High Fo, 3Fo Isolation: >55 dBc @ Fout= 29 GHz 100 kHz SSB Phase Noise: -128 dBc/Hz Single Supply: +5V @ 213 mA 24 Lead 4×4mm QFN Package: 16mm2

x2 Active Multiplier SMT, 24 - 33 GHz Fout Features: High Output Power: +15 dBm Low Input Power Drive: 0 to +6 dBm Fo Isolation: >20 dBc @ Fout= 28 GHz 100 kHz SSB Phase Noise: -132 dBc/Hz Single Supply: +5V @ 81 mA RoHS Compliant 3x3 mm SMT Package

VCO SMT with Fo/2 & Divide-by-4, 12.5 - 13.9 GHz Features: Dual Output: Fo = 12.5 - 13.9 GHz Fo/2 = 6.25 - 6.95 GHz Phase Noise: -110 dBc/Hz @100 kHz Typ. Pout: +10 dBm No External Resonator Needed QFN Leadless SMT Package, 25 mm2

GaAs pHEMT MMIC 4 Watt Power Amplifier, 12 - 16 GHz Features: Saturated Output Power: +37 dBm @ 22% PAE Output IP3: +44 dBm High Gain: 28 dB DC Supply: +7V @ 2400 mA No External Matching Required 18 Lead Ceramic 7x7 mm SMT Package

InGaP HBT Gain Block Amplifier SMT, DC - 4 GHz Features: P1dB Output Power: +21 dBm Gain: 21 dB Output IP3: +33 dBm Single Supply: +5V Industry Standard SOT89 Package

2 Watt Power Amplifier Chip, 6 - 10 GHz Features: Saturated Output Power: +34 dBm @ 24% PAE Output IP3: +43 dBm Gain: 23 dB DC Supply: +7V @ 1340 mA 50 Ohm Matched Input/Output Die Size: 2.47 x 2.49 x 0.1 mm

Low Noise Amplifier SMT, 2 - 4 GHz Features: Excellent Gain Flatness: ±0.4 dB High Gain: 20 dB Low Noise Figure: 3.5 dBm Output IP3: +36.5 dBm 50 Ohm Matched & DC Blocked RF I/Os RoHS Compliant 4 x 4 mm SMT Package

0.1 GHz to 6.0 GHz, 0.5 dB LSB, 6-Bit, GaAs Digital Attenuator Features: Attenuation range: 0.5 dB (LSB) steps to 31.5 dB Low insertion loss: 1.6 dB at 3 GHz Excellent attenuation accuracy High linearity Input 0.1dB compression (P0.1dB): 33 dBm typical Input third-order intercept (IP3): 55 dBm typical High RF input power handling: 28 dBm Low phase shift: 25° at 3 GHz Pin compatible to the HMC1122 See data sheet for additional featuresHMC624A-EP Supports defense and aerospace applications (AQEC standard) Download HMC624A-EP data sheet (pdf) Extended industrial temperature range: −55°C to +105°C Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available upon request