VCO SMT w/Buffer Amplifier, 3.9 - 4.45 GHz Features: Pout: +5 dBm Phase Noise: -106 dBc/Hz @100 KHz No External Resonator Needed Single Supply: +3V @ 30 mA QFN Leadless SMT Package, 16 mm2

Programmable 5-Bit Counter SMT, DC - 2.2 GHz Features: SSB Phase Noise: -153 dBc/Hz @ 100 kHz Selectable Division from 2 to 32 Parallel 5-Bit Control Wide Input Power Range: -20 to +10 dBm 4x4 mm Leadless SMT Package

0.5 dB LSB GaAs MMIC 6-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, 2.2 - 8.0 GHz Features: 0.5 dB LSB Steps to 31.5 dB Single Control Line Per Bit ± 0.5 dB Typical Bit Error Single +5V Supply 3×3 mm SMT Package

VCO SMT w/Buffer Amplifier, 5.5 - 6.1 GHz Features: Pout: +2 dBm Phase Noise: -102 dBc/Hz @100 kHz No External Resonator Needed Single Supply: 3V @ 27 mA 16mm² Leadless SMT Package

InGaP HBT Divide-by-3 SMT, DC - 7 GHz Features: SSB Phase Noise: -153 dBc/Hz @100KHz Wide Bandwidth Output Power: -1 dBm Single DC Supply: +5V @ 69 mA MS8G SMT Package

Medium Power Amplifier SMT, 7.0 - 15.5 GHz Features: Gain: 15 dB Saturated Power: +21.5 dBm @ 25% PAE Single Positive Supply: +5V 50 Ohms Matched Input/Output Hermetic SMT Package, 25mm² Screening to MIL-PRF-38535 (Class B or S) Available

GaAs pHEMT MMIC Medium Power Amplifier, 6 - 18 GHz Features: Gain: 15.5 dB Saturated Power: +22 dBm @ 23% PAE Single Supply Voltage: +5V w/ Optional Gate Bias 50 Ohm Matched Input/Output Die Size: 0.94 x 0.94 x 0.1 mm

InGaP HBT Divide-by-4 SMT, 10 - 26 GHz Features: Very Wide Bandwidth Ultra Low SSB Phase Noise: -150 dBc/Hz Output Power: -4 dBm Single DC Supply: +5V RoHS Compliant 3x3 mm SMT Package

x2 Active Multiplier SMT, 20 - 25 GHz Features: Output Power: +11 dBm Wide Input Power Range: -4 to +6 dBm Fo, 3Fo Isolation: >20 dBc @ Fout= 20 GHz 100 KHz SSB Phase Noise: -135 dBc/Hz Single Supply: +5V@ 48 mA RoHS Compliant 3×3 mm SMT Package

Power Amplifier SMT, 0.8 - 1.0 GHz Features: Gain: 26 dB 32% PAE @ 28.5 dBm Output Power +40 dBm Output IP3 Integrated Power Control (Vpd) Included in the HMC-DK002 Designer’s Kit

1.6 Watt Power Amplifier SMT, 0.4 - 2.2 GHz Features: Output IP3: +51 dBm 21.5 dB Gain @ 400 MHz 8 dB Gain @ 2100 MHz 45% PAE @ +32 dBm Pout +25 dBm CDMA2000 Channel Power@ -45 dBc ACP Single +5V Supply Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm²

Wideband Low Noise Amplifier SMT, 2 - 20 GHz Features: Noise Figure: 2.5 dB @ 10 GHz Gain: 13 dB P1dB Output Power: +14.5 dBm @ 10 GHz Self-Biased: +5V @ 66 mA 50 Ohm Matched Input/Output 25 mm² Leadless SMT Package

GaAs pHEMT MMIC Low Noise AGC Amplifier, 2 - 20 GHz Features: 50 Ohm Matched Input/Output Hermetic SMT Package Gain: 14 dB Noise Figure: 2.5 dB @ Mid-Band P1dB Output Power: +18 dBm @ Mid-Band Supply Voltage: +5V @ 60mA Screening to MIL-PRF-38535 (Class B or S) Available

Wideband Power Amplifier Chip, 2 - 20 GHz Features: P1dB Output Power: +26 dBm Gain: 16 dB Output IP3: +30 dBm Supply Voltage: +8V @ 290 mA 50 Ohm Matched Input/Output Die Size: 3.12 x 1.63 x 0.1 mm

0.1 GHz to 3 GHz,1 dB LSB, 5-Bit, GaAs Digital Attenuator Features: Attenuation range: 1 dB LSB steps to 31 dB Insertion loss: 1.7 dB typical at 3 GHz Excellent attenuation accuracy: 0.3 dB typical High Input linearity 0.1dB compression (P0.1dB): 27 dBm typical Third-order intercept (IP3): 48 dBm typical High power handling: 27 dBm Low phase shift: 27° at 3 GHz Single-supply operation: 3 V to 5 V CMOS-/TTL-compatible parallel control 16-lead, 3 mm × 3 mm LFCSP packageHMC470A-EP supports defense and aerospace applications (AQEC standard) Download the HMC470A-EP data sheet (pdf) Military temperature range: −55°C to +125°C Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request V62/17617 DSCC Drawing Number

Low Noise High IP3 Amplifier SMT, 12 - 16 GHz Features: Noise Figure: 2.5 dB P1dB Output Power: +25 dBm Gain: 23 dB Output IP3: +34 dBm Supply: +5V 50 Ohm Matched Input/Output 25 mm² Leadless QFN SMT Package

Low Noise Amplifier SMT with Bypass Mode, 3.4 - 3.8 GHz Features: Gain: 16 dB Noise Figure: 2 dB Single Supply: +3V @ 9 mA Integrated Bypass Mode 50 Ohm Matched Input/Output 3x3 mm QFN SMT Package

InGaP HBT Divide-by-2 SMT, DC - 18 GHz Features: Ultra Low SSB Phase Noise: -150 dBc/Hz Very Wide Bandwidth Output Power: -4 dBm Single DC Supply: +5V 3x3 mm QFN SMT Package

InGaP HBT Divide-by-8 SMT, DC - 18 GHz Features: Ultra Low SSB Phase Noise: -150 dBc/Hz Very Wide Bandwidth Output Power: -4 dBm Single DC Supply: +5V 3×3 mm QFN Package

SiGe Direct Modulator SMT, 250 - 3800 MHz Features: Wideband RF Frequency Range High Carrier Suppression: 38 dBc Very Low Noise Floor: -158 dBm/Hz Low LO Power: -6 to +6 dBm Differential or Single Ended LO Input Single Low Current Supply: +3.3V@ 108 mA