6 GHz integer-N PLL Features: 6.0 GHz bandwidth 2.7 V to 3.3 V power supply Separate charge pump supply (VP) allows extended tuning voltage in 3 V systems Programmable dual-modulus prescaler 8/9, 16/17, 32/33, 64/65 Programmable charge pump currents Programmable antibacklash pulse width 3-wire serial interface Analog and digital lock detect Hardware and software power-down modeADF4106-EP supports defense and aerospace applications (AQEC standard) Download ADF4106-EP data sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available upon request V62/11606 DSCC Drawing Number

Direct Modulation/Fast Waveform Generating, 13.5 GHz, Fractional-N Frequency Synthesizer Features: RF bandwidth to 13.5 GHz High and low speed FMCW ramp generation 25-bit fixed modulus allows subhertz frequency resolution PFD frequencies up to 130 MHz Normalized phase noise floor of −224 dBc/Hz FSK and PSK functions Sawtooth, triangular, and parabolic waveform generation Ramp superimposed with FSK Ramp with 2 different sweep rates Ramp delay, frequency readback, and interrupt functions Programmable phase control See datasheet for additional features

Microwave Wideband Synthesizer with Integrated VCO Features: Output frequency range: 800 MHz to 12.8 GHz Jitter = 18 fsRMS (Integration BW: 100 Hz to 100 MHz) Jitter = 27 fsRMS (ADC SNR Method) Wideband Noise Floor: -160 dBc/Hz @12 GHz PLL Specifications: -239 dBc/Hz: Normalized In-Band Phase Noise Floor -147 dBc/Hz: Normalized In-Band 1/f Noise Phase Detector Frequency up to 500 MHzReference Input Frequency up to 1 GHz Typical -100 dBc PFD spursReference to Output Delay Specifications: Part-to-Part Standard Deviation: 3 ps Temperature Drift: 0.03 ps/ Adjustment Step Size: <+/-0.1 ps Multi-chip Output Phase Alignment 3.3 V and 5 V Power supplies 7 mm x 7 mm 48 Lead LGA

Microwave Wideband Synthesizer with Integrated VCO Features:RF output frequency range: 53.125 MHz to 13,600 MHz Noise floor integer channel: −227 dBc/Hz Noise floor fractional channel: −225 dBc/Hz Integrated rms jitter (1 kHz to 20 MHz): 97 fs for 6 GHz output Fractional-N synthesizer and integer N synthesizer Pin compatible to the ADF5355 High resolution, 52-bit modulus Phase frequency detector (PFD) operation to 125 MHz Reference input frequency operation to 600 MHzMaintains frequency lock over −40°C to +85°C Low phase noise, voltage controlled oscillator (VCO) Programmable divide by 1, 2, 4, 8, 16, 32, or 64 output Analog and digital power supplies: 3.3 V Charge pump and VCO power supplies: 5.0 V typical Logic compatibility: 1.8 V Programmable output power level RF output mute function Supported by the ADIsimPLL design tool

4-Channel, 24 GHz, Receiver Downconverter Features: Integrated baluns for single-ended receiver (Rx) inputs and local oscillator (LO) input Rx channel gain: 22 dB Noise figure (NF): 10 dB P1dB: −10 dBm LO input range: −8 dBm to +5 dBm Rx to IF isolation: 30 dB RF signal bandwidth: 250 MHz Rx output impedance: 900 Ω differential LO input buffer: 24 GHz RF and LO S11 at 50 Ω: −5 dB Temperature sensor with analog output: ±5° Electrostatic discharge (ESD) performance Human body model (HBM): 2000 V Charged device model (CDM): 500 V Qualified for automotive applications

High Performance, Low Power, 169MHz ISM Band, Radio Transceiver IC Features: RF frequency range: 169.4 MHz to 169.6 MHz Modulation: 2GFSK, 4GFSK Data rates: 2GFSK: 2.4 kbps and 4.8 kbps 4GFSK: 6.4 kbps (Tx only) 1nA sleep current Receiver performance 97 dB blocking at ±10 MHz offset 66 dB adjacent channel rejection −122 dBm sensitivity  See data sheet for additional features

Low Capacitance, Low Charge Injection, 15 V/+12 V iCMOS Quad SPST Switch Features: 1 pF off capacitance 2.6 pF on capacitance <1 pC charge injection 33 V supply range 120 Ω on resistance Fully specified at ±15 V, +12 V No VL supply required 3 V logic-compatible inputs Rail-to-rail operation 16-lead TSSOP and 16-lead LFCSP Typical power consumption: <0.03 μW

4 Ron, 4-Channel 15 V/+12 V/5 V iCMOS Multiplexer Features: 4.7 Ω maximum on resistance at 25°C 0.5 Ω on-resistance flatness Up to 190 mA continuous current Fully specified at ±15 V/+12 V/±5 V 3 V logic-compatible inputs Rail-to-rail operation Break-before-make switching action 16-lead TSSOP and 4 mm × 4 mm LFCSP

4.5 RON, 4-Channel 5 V,+12 V, +5 V, and +3.3 V Multiplexer Features: 4.5 Ω typical on resistance 1 Ω on-resistance flatness Up to 470 mA continuous current ±3.3 V to ±8 V dual-supply operation 3.3 V to 16 V single-supply operation No VL supply required 3 V logic-compatible inputs See datasheet for additional features

LC2MOS 15 V 4 Channel High Performance Analog Multiplexer Features: 44 V supply maximum ratings VSS to VDD analog signal range Low on resistance (100 Ω maximum) Low power (ISUPPLY < 75 µA) Fast switching Break-before-make switching action Plug-in replacement for DG408

16-Channel Multiplexer (Superior DG506A Replacement) Features: 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Single/Dual Supply Specifications Available in 28-Lead DIP, SOIC, PLCC, TSSOP and LCCC Packages Wide Supply Range (10.8 V to 16.5 V) Low Power Dissipation (28 µW max) Low Leakage (20 pA typ) See datasheet for additional features

5V, 30 Ohm, Quad SPST (4NC) Switch Features: +3V, +5V and ± 5 V Power Supplies Ultralow Power Dissipation (<0.5 µW ) Low Leakage (< 100 pA) Low On-Resistance (<50 O) Fast Switching Times Low Charge Injection TTL/CMOS-Compatible Inputs 16-Lead DIP and SOIC Packages

High Voltage, Latch-Up Proof, 8-Channel Differential Multiplexer Features: Latch-up proof 3.5 pF off source capacitance 33 pF off drain capacitance 0.35 pC typical charge injection ±0.02 nA on channel leakage Low on resistance: 155 typical ±9 V to ±22 V dual-supply operation 9 V to 40 V single-supply operation VSS to VDD analog signal range Human body model (HBM) ESD rating - 8 kV I/O port to supplies

Fault Protection, 0.4 pC QINJ, 4:1 Dual Multiplexer Features: Overvoltage protection up to −55 V and +55 V Power-off protection up to −55 V and +55 V Overvoltage detection on source pins Low charge injection (QINJ): −0.4 pC Low on capacitance: 14 pF Latch-up immune under any circumstance Known state without digital inputs present VSS to VDD analog signal range ±5 V to ±22 V dual-supply operation 8 V to 44 V single-supply operation Fully specified at ±15 V, ±20 V, +12 V, and +36 V

Fault Protection, 6 RON, SPST Switch with 0.6 k Feedback Channel Features: Analog output protection and detection solution Overvoltage protection up to 60 V on S and SFB pins Power off protection up to 60 V on S and SFB pins Integrated 0.6 k secondary feedback channel Known output under all conditions User enabled, power-on condition pulls source to 0 V Known state without digital inputs present Latch-up immune Optimized resistance for measurement channel and feedback channel Low on resistance of 6 typical on signal channel Ultraflat, on resistance on signal channel 3 mm 2 mm LFCS VSS to VDD 2 V signal range Fully specified at ±15 V, ±20 V, +12 V, and +36 V ±5 V to ±22 V dual supply operation 8 V to 44 V single-supply operation

CMOS, 2.5 Low Voltage Differential 8 Channel Multiplexer Features: +1.8 V to +5.5 V single supply ±2.5 V dual supply 2.5 ON resistance 0.5 ON resistance flatness 100 pA leakage currents 40 ns switching times Differential 8-to-1 multiplexer 28-lead TSSOP package Low-power consumption TTL/CMOS-compatible inputs

Low Voltage, 300 MHz Quad 2:1 Mux Analog HDTV Audio/Video Switch Features: Bandwidth: 300 MHz Low Insertion Loss and on Resistance: 5 typical On Resistance Flatness: 0.68 Typical Single 3 V/5 V Supply Operation Low Quiescent Supply Current: 1 nA Typical TTL/CMOS Compatible Fast switching times: tON, 7 ns; tOFF, 5 ns ESD protection 2 kV human body model (HBM) 200 V machine model (MM) 1 kV field-induced charged device model (FICDM)

Wideband, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches Features: Wideband switch: −3 dB at 4 GHz Absorptive/reflective switches High off isolation (43 dB at 1 GHz) Low insertion loss (0.8 dB at 1 GHz) Single 1.65 V to 2.75 V power supply CMOS/LVTTL control logic 8-lead MSOP and tiny 3 mm × 3 mm LFCSP Low power consumption (<1 µA)

Wideband, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches Features: Wideband switch: −3 dB at 4 GHz Absorptive/reflective switches High off isolation (43 dB at 1 GHz) Low insertion loss (0.8 dB at 1 GHz) Single 1.65 V to 2.75 V power supply CMOS/LVTTL control logic 8-lead MSOP and tiny 3 mm × 3 mm LFCSP Low power consumption (<1 µA)

0 Hz/DC to 34 GHz, SPDT MEMS Switches Features: ADGM1001: DC to 34 GHz Insertion loss 0.8 dB (typical) at 18 GHz 1.5 dB (typical) at 34 GHz IIP3: 76 dBm (typical) Maximum RF power: 33 dBm On resistance: 3.4 Ω (typical) Maximum dc current: 200 mA Actuation lifetime: 100 million cycles (minimum) On switching time (tON): 200 μs (typical) Integrated 3.3 V driver for simple control with parallel and SPI Independently controllable switches Space-saving integrated passive components Small, 5.00 mm × 4.00 mm × 0.90 mm, 24-lead LGA package Temperature range: –40°C to +85°C