Low Noise Amplifier SMT, 0.7 - 1.0 GHz Features: Noise Figure: 0.7 dB Output IP3: +36 dBm Gain: 15 dB Externally Adjustable Supply Current Single Positive Supply: +5V 50 Ohm Matched Input/Output

Medium Power Amplifier SMT, 12 - 30 GHz Features: Gain: 15 dB Saturated Output Power: +18 dBm Output IP3: +25 dBm Single Positive Supply: +5V @ 100 mA 50 Ohm Matched Input/Output RoHS Compliant 4x4 mm Package

Medium Power Amplifier SMT, 12 - 30 GHz Features: Gain: 15 dB Saturated Output Power: +18 dBm Output IP3: +25 dBm Single Positive Supply: +5V @ 100 mA 50 Ohm Matched Input/Output RoHS Compliant 4x4 mm Package

VCO SMT w/Buffer Amplifier, 2.25 - 2.5 GHz Features: Pout: +4.5 dBm Phase Noise: -115 dBc/Hz @100 KHz No External Resonator Needed Single Supply: 3V @ 35 mA QFN Leadless SMT Package, 16 mm2

High IP3 Mixer SMT, 450 - 500 MHz Features: Input IP3: +32 dBm Conversion Loss: 9.5 dB Low External Part Count Ultra Small MSOP8 Package: 14.8 mm²

InGaP HBT Power Amplifier SMT, 5 - 6 GHz Features: Gain: 17 dB Saturated Power: +29 dBm 38% PAE Supply Voltage: +5V Power Down Capability Low External Part Count

Power Amplifier SMT, 1.6 - 2.2 GHz Features: Gain: 23 dB Saturated Power: +29.5 dBm 42% PAE Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count

VCO SMT w/Buffer Amplifier, 5.0 - 5.5 GHz Features: Pout: +2 dBm Phase Noise: -103 dBc/Hz @100 kHz No External Resonator Needed Single Supply: 3V @ 27 mA 16mm2 Leadless SMT Package

GaAs pHEMT MMIC Medium Power Amplifier, 6 - 18 GHz Features: Gain: 14 dB Saturated Output Power: +21.5 dBm @ 27% PAE Single Positive Supply: +5V @ 90 mA 50 Ohm Matched Input/Output 12 Lead Ceramic 3x3mm SMT Package: 9mm2

GaAs PHEMT MMIC Medium Power Amplifier, 7 - 15.5 GHz Features: Gain: 15 dB Saturated Power: +21.5 dBm @ 27% PAE Single Supply Voltage: +5V w/ Optional Gate Bias 50 Ohms Matched Input/Output Leadless SMT Package, 25mm2

GaAs pHEMT MMIC Medium Power Amplifier, 6.5 - 13.5 GHz Features: Gain: 14 dB Saturated Power: +20 dBm @ 20% PAE Single Supply Voltage: +5V w/ Optional Gate Bias 50 Ohm Matched Input/Output 16 Lead 3x3mm SMT Package: 9mm2

x4 Active Multiplier SMT, 9.8 - 11.2 GHz Fout Features: Output Power: +4 dBm Sub-Harmonic Suppression: >25 dBc SSB Phase Noise: -142 dBc/Hz Single Supply: 5V@ 52 mA 16 mm2 Leadless SMT Package

Active x8 Multiplier SMT, 9.9 - 11.2 GHz Fout Features: Output Power: +6 dBm Sub-Harmonic Suppression: >25 dBc SSB Phase Noise: -136 dBc/Hz Single Supply: +5V@ 68 mA 16 mm² Leadless SMT Package

GaAs pHEMT MMIC Medium Power Amplifier, 5 - 18 GHz Features: Gain: 18 dB Saturated Power: +21 dBm @ 18% PAE Output IP 3: +28 dBm Single Supply: +5V @ 120 mA 50 Ω Matched Input/Output 16 Lead 3x3mm SMT Package: 9mm2

1 Watt Power Amplifier SMT, 1.7 - 2.2 GHz Features: Output IP3: +46 dBm Gain: 27 dB @ 1900 MHz 48% PAE @ +32 dBm Pout +25 dBm W-CDMA Channel Power @ -50 dBc ACPR Integrated Power Control (Vpd) QSOP16G SMT Package: 29.4 mm² Included in the HMC-DK002 Designer’s Kit

GaAs PHEMT MMIC Low Noise Amplifier, DC - 20 GHz Features: Noise Figure: 2.5 dB @ 10 GHz Gain: 14 dB @ 10 GHz P1dB Output Power: +16 dBm @ 10 GHz Supply Voltage: +8V @ 60 mA 50 Ohm Matched Input/Output Die Size: 3.12 × 1.63 × 0.1 mm

GaAs pHEMT MMIC Low Noise AGC Amplifier, 2 - 20 GHz Features: Gain: 13 dB Noise Figure: 2.8 dB @ 10 GHz P1dB Output Power: +18 dBm @ 10 GHz Supply Voltage: +5V @ 60mA 50 Ohm Matched Input/Output 32 Lead 5x5mm SMT Package: 25mm²

Wideband Power Amplifier SMT, 2 - 20 GHz Features: Output Power: +26 dBm P1dB Gain: 14 dB Output IP3: +30 dBm Supply Voltage: +8V @ 290 mA 50 Ohm Matched Input/Output 25 mm² Leadless SMT Package

0.1 GHz to 3 GHz,1 dB LSB, 5-Bit, GaAs Digital Attenuator Features: Attenuation range: 1 dB LSB steps to 31 dB Insertion loss: 1.7 dB typical at 3 GHz Excellent attenuation accuracy: 0.3 dB typical High Input linearity 0.1dB compression (P0.1dB): 27 dBm typical Third-order intercept (IP3): 48 dBm typical High power handling: 27 dBm Low phase shift: 27° at 3 GHz Single-supply operation: 3 V to 5 V CMOS-/TTL-compatible parallel control 16-lead, 3 mm × 3 mm LFCSP packageHMC470A-EP supports defense and aerospace applications (AQEC standard) Download the HMC470A-EP data sheet (pdf) Military temperature range: −55°C to +125°C Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request V62/17617 DSCC Drawing Number

0.5 dB LSB GaAs MMIC 6-Bit Digital Positive Control Attenuator, DC - 3.8 GHz Features: 0.5 dB LSB Steps to 31.5 dB  Single control line per bit  TTL/CMOS compatible control  ±0.25 dB typical step error Single +5V supply  24 lead 4x4 mm QFN package: 16 mm2