5.5 GHz to 18 GHz, GaAs, pHEMT, MMIC, Medium Power Amplifier Features: High saturated output power: 26 dBm with 24% PAE  High gain: 24 dB typical High output IP3: 36 dBm typical High output P1dB: 25.5 dBm Die size: 2.19 mm × 1.05 × 0.1 mm

5.5 GHz to 18 GHz, GaAs, pHEMT, MMIC, Medium Power Amplifier Features: High saturated output power: 26 dBm with 24% PAE  High gain: 24 dB typical High output IP3: 36 dBm typical High output P1dB: 25.5 dBm Die size: 2.19 mm × 1.05 × 0.1 mm

Wideband Direct Quadrature Modulator, 100 - 6000 MHz Features: Very Low Noise Floor, -160 dBm/Hz Excellent Carrier & Sideband Suppression Very High Linearity, +30 dBm OIP3 High Output Power, +11 dBm Output P1dB High Modulation Accuracy 24 Lead 4x4 mm QFN Package: 16 mm2

10.38 GHz to 11.30 GHz MMIC VCO with Half Frequency Output Features: Dual output frequency range fOUT = 10.38 GHz to 11.30 GHz fOUT/2 = 5.19 GHz to 5.65 GHz 32-lead, RoHS compliant, 5 mm × 5 mm LFCSP (25 mm2) Single-side band (SSB) phase noise −86 dBc/Hz typical at 10 kHz −114 dBc/Hz typical at 100 kHz No external resonator needed Power output (POUT): 8 dBm

Wideband Direct Quadrature Modulator w/ Fractional-N PLL & VCO, 100 - 4000 MHz Features: Very Low Noise Floor, -160 dBm/Hz Excellent Carrier & Sideband Suppression Very High Linearity, +30 dBm OIP3 High Output Power, +10.5 dBm Output P1dB High Modulation Accuracy Maximum Phase Detector Rate: 100 MHz Low Phase Noise: -110 dBc/Hz in Band Typical See datasheet for additional features

GaAs, Nonreflective, SP4T Switch 100 MHz to 4 GHz Features: Broadband frequency range: 100 MHz to 4 GHz Nonreflective 50 Ω design Low insertion loss: 0.7 dB at 2 GHz High isolation: 43 dB at 2 GHz High input linearity at 250 MHz to 4 GHz 1 dB compression (P1dB): 29 dBm typical Third order intercept (IP3): 47 dBm typical High power handling 28.5 dBm through path 25 dBm terminated path Single positive supply: 3 V to 5 V Integrated 2 to 4 line decoder 16-lead, 3 mm × 3 mm LFCSP package ESD rating: 250 V (Class 1A) Pin compatible with the HMC7992 HMC241ALP3E supports defense and aerospace applications (AQEC standard) Download the HMC241ATCPZ-EP data sheet Military temperature range (−55°C to +125°C) Controlled manufacturing baseline One assembly/test site Product change notification Qualification data available on request

GaAs MMIC SP6T Non-Reflective Switch, DC - 3 GHz Features: Low insertion loss (2 GHz): 1.0 dB Single positive supply: VDD = +3V to +5V Integrated 3:6 TTL decoder 24 lead QSOP package

10 GHz to 26 GHz, GaAs, MMIC, Double Balanced Mixer Features: Passive; no dc bias required Conversion loss 8 dB typical for 10 GHz to 18 GHz 9 dB typical for 18 GHz to 26 GHz LO to RF isolation: 40 dB Input IP3: 19 dBm typical for 18 GHz to 26 GHz Wide IF bandwidth: dc to 8 GHz RoHS compliant, 12-terminal, 3 mm × 3 mm, ceramic LCC package: 9 mm2

Low Noise Amplifier Chip, 24 - 36 GHz Features: Excellent Noise Figure: 2 dB Gain: 22 dB Single Supply: +3V @ 58 mA Small Size: 2.48 x 1.33 x 0.1 mm

Sub-Harmonic Mixer Chip, 20 - 32 GHz Features: Integrated LO Amplifier: -4 dBm Input Sub-Harmonically Pumped (x2) LO High 2LO/RF Isolation: 40 dB Small Size: 1.32 × 0.97 × 0.1 mm

SPDT, Non-Reflective Switch SMT, DC - 3.5 GHz Features: High Isolation: >45 dB Positive control: 0/+5V Non-Reflective Design Ultra Small Package: MSOP8G

22 GHz to 38 GHz, GaAs, MMIC, Double Balanced Mixer Features: Downconverter Conversion loss 9 dB typical for 22 GHz to 29 GHz 11 dB typical for 29 GHz to 38 GHz LO to RF isolation 37 dB typical for 22 GHz to 29 GHz 36 dB typical for 29 GHz to 38 GHz LO to IF isolation 30 dB typical for 22 GHz to 29 GHz 27 dB typical for 29 GHz to 38 GHz RF to IF isolation 31 dB typical for 22 GHz to 29 GHz 34 dB typical for 29 GHz to 38 GHz Input IP3 17 dBm typical for 22 GHz to 29 GHz 21 dBm typical for 29 GHz to 38 GHz IF range DC to 8 GHz Passive, no dc bias required Small size 0.87 × 0.58 × 0.102 mm

Low Noise Amplifier SMT, 350 - 550 MHz Features: Noise Figure: ≤1 dB Output IP3: +38 dBm Gain: 17 dB Very Stable Gain vs. Supply & Temp Single Supply: +5V @ 104 mA 50 Ohm Matched Output

MMIC VCO SMT w/ Buffer Amp, 5.8 - 6.8 GHz Features: Pout: +11 dBm Phase Noise: -110 dBc/Hz @100 KHz No External Resonator Needed Single Supply: 3V @ 100 mA 15 mm2 MSOP8G SMT Package

InGaP HBT Divide-by-8 Hermetic SMT, DC - 12 GHz Features: Ultra Low SSB Phase Noise: -153 dBc/Hz Wide Bandwidth Output Power: 4 dBm Single DC Supply: +5V 8 Lead Hermetic SMT Package

InGaP HBT Divide-by-8 Chip, DC - 12 GHz Features: Ultra Low SSB Phase Noise: -153 dBc/Hz Wide Bandwidth Output Power: -6 dBm Single DC Supply: +5V Small Size: 1.45 × 0.69 x 0.1 mm

InGaP HBT Divide-by-4 Chip, DC - 13 GHz Features: Ultra Low SSB Phase Noise: -151 dBc/Hz Wide Bandwidth Output Power: 5 dBm Single DC Supply: +5V Small Size: 1.30 x 0.69 x 0.1 mm

x2 Active Multiplier SMT, 9 - 16 GHz FOUT Features: Output Power: +15 dBm Wide Input Power Range: 0 to +10 dBm 100 kHz SSB Phase Noise: −140 dBc/Hz +5V @ 75 mA Supply 16 mm2 Leadless QFN SMT Package

GaAs pHEMT MMIC Low Noise Amplifier, 700 - 1000 MHz Features:Noise Figure: Output IP3: +34 dBmGain: 15 dBVery Stable Gain vs. Supply & TemperatureSingle Supply: +5V @ 100 mA50 Ohm Matched Output

Low Noise Amplifier SMT, 0.7 - 1.0 GHz Features: Noise Figure: 0.7 dB Output IP3: +36 dBm Gain: 15 dB Externally Adjustable Supply Current Single Positive Supply: +5V 50 Ohm Matched Input/Output