Multimodal Sensor Front End Features: Multimodal analog front end 8 input channels with multiple operation modes to accommodate the following measurements: PPG, ECG, EDA, impedance, and temperature Dual channel processing with simultaneous sampling 12 programmable time slots for synchronized sensor measurements Flexible input multiplexing to support differential and single-ended sensor measurements 8 LED drivers, 4 of which can be driven simultaneously Flexible sampling rate from 0.004 Hz to 9 kHz using internal oscillators On-chip digital filtering SNR of transmit and receive signal chain: 90 dB Ambient light rejection: 60 dB up to 1 kHz 400 mA total LED drive current Total system power dissipation: 50 µW (combined LED and AFE power), continuous PPG measurement at 75 dB SNR, 25 Hz ODR, 100 nA/mA CTR SPI and I2C communications supported 256-byte FIFO

Multimodal Sensor Front End Features: Multimodal analog front end 8 input channels with multiple operation modes for various sensor measurements Dual-channel processing with simultaneous sampling 12 programmable time slots for synchronized sensor measurements Flexible input multiplexing to support differential and single-ended sensor measurements 8 LED drivers, 4 of which can be driven simultaneously Flexible sampling rate from 0.004 Hz to 9 kHz using internal oscillators On-chip digital filtering SNR of transmit and receive signal chain: 100 dB AC ambient light rejection: 60 dB up to 1 kHz 400 mA total LED peak drive current Total system power dissipation: 30 µW (combined LED and AFE power), continuous PPG measurement at 75 dB SNR, 25 Hz ODR, 100 nA/mA CTR SPI communications supported 512-byte FIFO size

Ultracompact, Precision 10.0 V Voltage Reference Features: Ultracompact SC70 and TSOT packages Low temperature coefficient 8-lead SOIC: 3 ppm/°C typical 5-lead SC70: 9 ppm/°C maximum 5-lead TSOT: 9 ppm/°C maximum Initial accuracy ±0.1% No external capacitor required Low noise 10 μV p-p, 0.1 Hz to 10.0 Hz (ADR02) Wide operating range ADR01: 12.0 V to 36.0 V ADR02: 7.0 V to 36.0 V ADR03: 4.5 V to 36.0 V ADR06: 5.0 V to 36.0 V High output current 10 mA Wide temperature range: –40°C to +125°C ADR01/ADR02/ADR03 pin compatible to industry-standard REF01/REF02/REF03 ADR01, ADR02, ADR03 and ADR06 SOIC (A grade) qualified for automotive applicationsADR01-EP supports defense and aerospace applications (AQEC standard) Download ADR01-EP data sheet (pdf) Military temperate range (−55°C to +125°C) Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request V62/12658 DSCC Drawing Number

Ultracompact, Precision 5.0 V Voltage Reference Features: Ultracompact SC70 and TSOT packages Low temperature coefficient 8-lead SOIC: 3 ppm/°C typical 5-lead SC70: 9 ppm/°C maximum 5-lead TSOT: 9 ppm/°C maximum Initial accuracy ±0.1% No external capacitor required Low noise 10 μV p-p, 0.1 Hz to 10.0 Hz (ADR02) Wide operating range ADR01: 12.0 V to 36.0 V ADR02: 7.0 V to 36.0 V ADR03: 4.5 V to 36.0 V ADR06: 5.0 V to 36.0 V High output current 10 mA Wide temperature range: –40°C to +125°C ADR01/ADR02/ADR03 pin compatible to industry-standard REF01/REF02/REF03 ADR01, ADR02, ADR03 and ADR06 SOIC (A grade) qualified for automotive applications

Oven-Compensated, Buried Zener, 6.62 V Voltage Reference Features: High long-term stability 0.5 ppm/year long-term drift, typical (after first 3000 hours) Low Zener reference noise: 0.14 ppm p-p (0.9 μV p-p) Low temperature coefficient: <0.2 ppm/°C On-chip heater and temperature sensor Specified for −40°C to +125°C operation Pincompatible upgrade to LTZ1000

Oven-Compensated, Buried Zener, 7.05 V Voltage Reference Features: 7.05 V ultrastable shunt reference Low temperature coefficient: 0.2 ppm/ Available in 4-pin TO-46 and 8-terminal LCC Typical reference noise for 10 Hz < f < 1 kHz: 1.84 μV rms Initial accuracy range: –300 mV to +250 mV Low dynamic impedance: 0.04 Ω in TO-46, 0.011 Ω in LCC External thermal insulator provided for TO-46 Upgrade path for legacy LM399, now also in surface-mount technology (SMT)

Oven-Compensated, Buried Zener, 7.05 V Voltage Reference Features: 7.05 V ultrastable shunt reference Low temperature coefficient: 0.2 ppm/ Available in 4-pin TO-46 and 8-terminal LCC Typical reference noise for 10 Hz < f < 1 kHz: 1.84 μV rms Initial accuracy range: –300 mV to +250 mV Low dynamic impedance: 0.04 Ω in TO-46, 0.011 Ω in LCC External thermal insulator provided for TO-46 Upgrade path for legacy LM399, now also in surface-mount technology (SMT)

Oven-Compensated, Buried Zener, 7.05 V Voltage Reference Features: 7.05 V ultrastable shunt reference Low temperature coefficient: 0.2 ppm/ Available in 4-pin TO-46 and 8-terminal LCC Typical reference noise for 10 Hz < f < 1 kHz: 1.84 μV rms Initial accuracy range: –300 mV to +250 mV Low dynamic impedance: 0.04 Ω in TO-46, 0.011 Ω in LCC External thermal insulator provided for TO-46 Upgrade path for legacy LM399, now also in surface-mount technology (SMT)

Ultralow Noise, LDO XFET 2.5V Voltage Reference w/Current Sink and Source Features: Ultralow noise (0.1 Hz to 10 Hz) ADR440: 1 μV p-p ADR441: 1.2 μV p-p ADR443: 1.4 μV p-p ADR444: 1.8 μV p-p ADR445: 2.25 μV p-p Superb temperature coefficient A Grade: 10 ppm/°C B Grade: 3 ppm/°C Low dropout operation (supply voltage headroom): 500 mV Input range: (VOUT + 500 mV) to 18 V High output source and sink current +10 mA and −5 mA, respectively Wide temperature range: −40°C to +125°CADR441-EP supports defense and aerospace applications (AQEC standard) Download ADR441-EP Data Sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request V62/18620 DSCC Drawing Number

Ultra-Low-Noise, High-Accuracy 4.096V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours

Silicon, SPDT Switch, Nonreflective, 100 MHz to 13 GHz Features: Nonreflective 50 Ω design Low insertion loss: 0.8 dB at 8 GHz High isolation: 45 dB at 8 GHz High input linearity P1dB: 39 dBm IP3: 60 dBm typical High power handling 35 dBm insertion loss path 27 dBm hot switching ESD rating: 2 kV (Class 2) HBM No low frequency spurious 0.05 dB RF settling time: 375 ns 0.1 dB RF settling time: 300 ns 16-lead, 3 mm × 3 mm LFCSP Pin-compatible with HMC1118, low frequency cutoff version

Silicon SPDT SwitchReflective, 100 MHz to 44 GHz Features: Ultrawideband frequency range: 100 MHz to 44 GHz Reflective design Low insertion loss with impedance match 1.0 dB typical to 18 GHz 1.4 dB typical to 40 GHz 1.7 dB typical to 44 GHz Low insertion loss without impedance match 0.9 dB typical to 18 GHz 1.7 dB typical to 40 GHz 2.1 dB typical to 44 GHz High input linearity P1dB: 27.5 dBm typical IP3: 50 dBm typical High RF input power handling Through path: 27 dBm Hot switching: 27 dBm No low frequency spurious RF settling time (50% VCTRL to 0.1 dB of final RF output): 17 ns 12-terminal, 2.25 mm × 2.25 mm LGA package Pin compatible with the ADRF5025 low frequency cutoff version ADRF5024-EP Supports defense and aerospace applications (AQEC standard) Download ADRF5024-EP data sheet (pdf) Military temperature range (−55°C to +105°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request

Silicon SPDT SwitchReflective, 100 MHz to 44 GHz Features: Ultrawideband frequency range: 100 MHz to 44 GHz Reflective design Low insertion loss with impedance match 1.0 dB typical to 18 GHz 1.4 dB typical to 40 GHz 1.7 dB typical to 44 GHz Low insertion loss without impedance match 0.9 dB typical to 18 GHz 1.7 dB typical to 40 GHz 2.1 dB typical to 44 GHz High input linearity P1dB: 27.5 dBm typical IP3: 50 dBm typical High RF input power handling Through path: 27 dBm Hot switching: 27 dBm No low frequency spurious RF settling time (50% VCTRL to 0.1 dB of final RF output): 17 ns 12-terminal, 2.25 mm × 2.25 mm LGA package Pin compatible with the ADRF5025 low frequency cutoff version ADRF5024-EP Supports defense and aerospace applications (AQEC standard) Download ADRF5024-EP data sheet (pdf) Military temperature range (−55°C to +105°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request

Silicon SPDT Switch, Reflective, 1 GHz to 60 GHz Features: Ultrawideband frequency range: 1 GHz to 60 GHz Reflective design Low insertion loss 1.4 dB typical up to 40 GHz 1.9 dB typical up to 55 GHz 2.0 dB typical up to 60 GHz High isolation 43 dB typical up to 40 GHz 36 dB typical up to 55 GHz 32 dB typical up to 60 GHz High input linearity P0.1dB: 24 dBm typical IP3: 45 dBm typical High RF power handling Through path: 24 dBm Hot switching path: 21 dBm CMOS/LVTTL compatible RF switching time: 15 ns RF settling time (50% VCTRL to 0.1 dB of RF output): TBD ns Dual supply operation: ±3.3 V 12 terminal, 2.5 mm × 2.5 mm, RoHS-compliant, land grid array (LGA) package

Silicon SPDT Switch, Reflective, 1 GHz to 60 GHz Features: Ultrawideband frequency range: 1 GHz to 60 GHz Reflective design Low insertion loss 1.4 dB typical up to 40 GHz 1.9 dB typical up to 55 GHz 2.0 dB typical up to 60 GHz High isolation 43 dB typical up to 40 GHz 36 dB typical up to 55 GHz 32 dB typical up to 60 GHz High input linearity P0.1dB: 24 dBm typical IP3: 45 dBm typical High RF power handling Through path: 24 dBm Hot switching path: 21 dBm CMOS/LVTTL compatible RF switching time: 15 ns RF settling time (50% VCTRL to 0.1 dB of RF output): TBD ns Dual supply operation: ±3.3 V 12 terminal, 2.5 mm × 2.5 mm, RoHS-compliant, land grid array (LGA) package

High Isolation, Silicon SP4T, Nonreflective Switch, 9 kHz to 12.0 GHz Features: Nonreflective 50 Ω design Positive control range: 0 V to 3.3 V Low insertion loss: 0.8 dB at 8.0 GHz High isolation: 34 dB at 8.0 GHz High power handling 33 dBm through path 27 dBm termination path High linearity 1 dB compression (P1dB): 37 dBm typical Input third-order intercept (IIP3): 58 dBm typical at 8.0 GHz ESD rating: 4 kV human body model (HBM) 4 mm × 4 mm, 24-lead LFCSP package No low frequency spurious RF settling time (0.05 dB margin of final RFOUT): 9 μs

Nonreflective, 9 kHz to 44 GHz Silicon SP4T Switch Features: Ultrawideband frequency range: 9 kHz to 44 GHz Nonreflective 50 Ω design Low insertion loss: 1.5 dB at 18 GHz 2.4 dB at 40 GHz 2.5 dB at 44 GHz High isolation: 44 dB at 18 GHz 39 dB at 40 GHz 36 dB at 44 GHz High input linearity: P0.1dB: 26 dBm typical IP3: 48 dBm typical High power handling 24 dBm through path 24 dBm terminated path All off state control Logic select control No low frequency spurs Settling time (0.1 dB final RF output): 6 μs 24-terminal, 3 mm × 3 mm LGA package Pin compatible with ADRF5042, fast switching version

9 kHz to 30 GHz, Silicon, SP4T Switch Features: Ultrawideband frequency range: 9 kHz to 30 GHz Nonreflective 50 Ω design Low insertion loss: 2.4 dB at 20 GHz to 30 GHz High isolation: 45 dB at 20 GHz to 30 GHz High input linearity P1dB: 28 dBm typical IP3: 50 dBm typical High power handling 24 dBm through path 24 dBm terminated path ESD rating: 1500 V HBM No low frequency spurious 0.1 dB settling time (50% VCTL to 0.1 dB final RF output): 6 µs 24-terminal LGA package

Silicon SP4T Switch,Reflective, 9 kHz to 44 GHz Features: Ultrawideband frequency range: 9 kHz to 44 GHz Reflective design Low insertion loss 1.5 dB to 18 GHz 2.4 dB to 40 GHz 2.7 dB to 44 GHz High isolation 47 dB to 18 GHz 33 dB to 40 GHz 31 dB to 44 GHz High input linearity P0.1dB: 26.5 dBm typical IP3: 50 dBm typical High RF input power handling Through path: 26 dBm Hot switching: 26 dBm No low frequency spurious 0.1 dB RF settling time: 5.2 μs 20-terminal, 3 mm × 3 mm, RoHS-compliant, LGA package Pin compatible with ADRF5046, fast switching version

High Power, 44 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 3.5 GHz Features: Reflective, 50 Ω design Low insertion loss: 0.6 dB typical to 2.0 GHz 0.7 dB typical to 3.5 GHz High isolation 50 dB typical to 2.0 GHz 46 dB typical to 3.5 GHz High power handling RF input power, continuous wave (CW) at TCASE = 85°C 43 dBm maximum operating 46.5 dBm absolute maximum rating High linearity 0.1 dB compression (P0.1dB): 46 dBm typical Input third-order intercept (IP3) 68 dBm typical to 2 GHz 65 dBm typical to 3.5 GHz ESD ratings Human body model (HBM): 2 kV, Class 2 Charged device model (CDM): 1.25 kV Single positive supply: VDD = 5 V Positive control, TTL-compatible: VCTL = 0 V or VDD 24-lead, 4 mm × 4 mm LFCSP package (16 mm2)