BOARD EVAL FOR ADD8504

Phase Locked Loops - PLL WBand RF PLL VCO, 25-3000MHz

The HMC596LP4(E) is a low-cost 4x2 switch matrix in a leadless QFN 4x4 mm surface mount package for use in Satellite/DBS, LNBs and multiswitches from 200 to 3000 MHz. A positive voltage controlled 4 bit decoder is integrated on the switch. The switches may be used in either 75 ohm or 50 ohm systems.Both switch outputs (OP1 & OP2) can independently select any of the four inputs (HH, HL, VH, VL) or simultaneously select the same inputs. Note that the switch is bi-directional and input/output functionality may be interchanged. All data presented was measured in a 50 ohm (input/output) system.APPLICATIONS DBS LNBs & Multiswitches Cable Modem/CATV Cellular Systems

The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dBof gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE.Applications Microwave Radios Broadband Radio Systems Wireless Local Loop Driver Amplifier

The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.Applications BLUETOOTH MMDS

The HMC385LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 2.25 to 2.5 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4.5 dBm typical from a single supply of 3V @ 35mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Wireless Infrastructure Industrial Controls Test Equipment Military

The HMC386LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifiers. Covering 2.6 to 2.8 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 5 dBm typical from a single supply of 3V @ 35mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Wireless Infrastructure Industrial Controls Test Equipment Military

The HMC437MS8G(E) is a low noise Divide-by-3 Static Divider utilizing InGaP GaAs HBT technology in a low cost 8 lead surface mount plastic package. This device operates from DC (with a square wave input) to 7 GHz input frequency from a single +5V DC supply. The low additive SSB phase noise of -153 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance.APPLICATIONS UNII, Point-to-Point & VSAT Radios 802.11a & HiperLAN WLAN Fiber Optic Cellular/3G Infrastructure