The ADP7183 is a complementary metal oxide semiconductor (CMOS), low dropout (LDO) linear regulator that operates from ?2.0 V to ?5.5 V and provides up to ?300 mA of output current. This LDO regulator is ideal for regulation of high performance analog and mixed-signal circuits operating from ?0.5 V down to ?4.5 V. Using an advanced proprietary architecture, the ADP7183 provides high PSRR and low noise, and it achieves excellent line and load transient response with a small 4.7 ?F ceramic output capacitor.The ADP7183 is available in 15 fixed output voltage options. The following voltages are available from stock: ?0.5 V, ?1.0 V,?1.2 V, ?1.5 V, ?1.8 V, ?2.0 V, ?2.5 V, ?3.0 V, and ?3.3 V. Additional voltages available by special order are ?0.8 V, ?0.9 V, ?1.3 V, ?2.8 V, ?4.2 V, and ?4.5 V. An adjustable version is also available that allows output voltages that range from ?0.5 V to ?VIN + 0.5 V with an external feedback divider.The enable logic feature is capable of interfacing with positive or negative logic levels for maximum flexibility.The ADP7183 regulator output noise is 4 ?V rms independent of the output voltage. The ADP7183 is available in an 8-lead, 2 mm ? 2 mm LFCSP, making it not only a very compact solution but also providing excellent thermal performance for applications requiring up to ?300 mA of output current in a small, low profile footprint.Applications Regulation to noise sensitive applications: analog-to-digital converters (ADCs), digital-to-analog converters (DACs), precision amplifiers Communications and infrastructure Medical and healthcare Industrial and instrumentation

The ADP8140 provides high current control of up to four LED drivers. Each driver can sink up to 500 mA. The sink current is programmed for all four drivers with one external resistor.The device features a feedback output that controls an external power supply for optimal efficiency. The ADP8140 also protects the LEDs, power supply, and itself against thermal events, short circuits, overvoltages, and LED open circuits. Multiple ADP8140 ICs are easily connected in parallel to drive additional LED strings or higher current LEDs. The ADP8140 is available in a small, thermally enhanced, lead frame chip scale package (LFCSP).Applications High brightness LED lighting Large format LED backlighting

The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56% typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ?0.15 dB across the 2.7 GHz to 3.1 GHz frequency range.The ADPA1106 is ideal for pulsed applications such as marine, weather, and military radar.The ADPA1106 comes in a 32-lead, lead frame chip scale package, premolded cavity (LFCSP_CAV) and is specified for operation from ?40?C to +85?C.APPLICATIONSWeather radarMarine radarMilitary radar

The ADPA7007CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides a gain of 21.5 dB, an output power for 1 dB compression (P1dB) of 31 dBm, and a typical output thirdorder intercept (IP3) of 41 dBm. The ADPA7007CHIP requires 1400 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data was taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.Applications Military and space Test instrumentation

The ADPA7008CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (1 W) distributed power amplifier that operates from 20 GHz to 54 GHz. The amplifier provides a gain of 18 dB, an output power for 1 dB compression (P1dB) of 30.5 dBm, and a typical output third-order intercept (IP3) of 38 dBm at 22 GHz to 42 GHz. The ADPA7008CHIP requires 1500 mA from a 5 V supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.APPLICATIONSMilitary and spaceTest instrumentationSatellite communications

The ADPA9002 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), power amplifier that operates between dc and 10 GHz. The amplifier provides 15 dB of gain, 42 dBm of OIP3, and 31.5 dBm of saturated output power (PSAT) while requiring 385 mA from a 12 V supply. The ADPA9002 is self biased in normal operation and has an optional bias control for supply quiescent current (IDQ) adjustment. The amplifier is ideal for military and space and?test equipment applications. The ADPA9002 also features inputs and outputs that are internally matched to 50 ?, housed in a RoHS compliant, 5 mm ? 5 mm LFCSP premolded cavity package, making it compatible with high volume surface-mount technology (SMT) assembly equipment.Note that throughout this data sheet, multifunction pins, such as RFOUT/VDD, are referred to either by the entire pin name or by a single function of the pin, for example, VDD, when only that function is relevant.Applications Military and space Test instrumentation

The ADR1399 precision shunt reference features excellent temperature stability over a wide range of voltage, temperature, and quiescent current conditions. A temperature stabilizing loop is incorporated with the active Zener on a monolithic? substrate, which nearly eliminates changes in voltage with temperature. The subsurface Zener circuit is fully specified at a quiescent current IREF of 3 mA and offers minimal noise (1.44 ?V p-p, 0.1 Hz to 10 Hz) and excellent long-term stability (7 ppm/?kHr). The ADR1399 offers a lower output dynamic impedance (0.08 ?) than the LM399, reducing the effects of shunt resistor (RSHUNT) and the supply voltage variation on the reference output.Ideal applications for the ADR1399 include ultrastable digital voltmeters, precision calibration equipment, and ultrarepeatable analog-to-digital converters (ADCs). The simplicity of the basic pin configurations is shown in Figure 1. The 8-terminal LCC version offers force and sense pins for lower dynamic impedance and for Kelvin sensing. Table 1. Related Products Model Output Voltage (V) Initial Accuracy Range (mV) ADR1399 7.05 ?300 to +250 LTZ1000 7.2 ?200 to +300 LM399 6.95 ?200 to +350 LT1236 5 and 10 ?2.5 to +2.5 APPLICATIONS Precision voltage reference for multimeters Calibration equipment voltage standards Laboratory measurement equipment Industrial monitor and control instrumentation Ultrastable data convertors

The ADRF5020 is a general-purpose, single-pole, double-throw(SPDT) switch manufactured using a silicon process. It comesin a 3 mm ? 3 mm, 20-lead land grid array (LGA) package andprovides high isolation and low insertion loss from 100 MHz to30 GHz.This broadband switch requires dual supply voltages, +3.3 Vand ?2.5 V, and provides CMOS/LVTTL logic-compatiblecontrol.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, electronic counter measures (ECMs) Broadband telecommunications systems

The ADRF5026 is a nonreflective, single-pole, double-throw (SPDT) radio frequency (RF) switch manufactured in a silicon process.The ADRF5026 operates from 100 MHz to 44 GHz with better than 3.8 dB of insertion loss and 45 dB of isolation. The ADRF5026 features an all off control, where both RF ports are in an isolation state. The ADRF5026 has a nonreflective design and both of the RF ports are internally terminated to 50 ?. The ADRF5026 requires a dual-supply voltage of +3.3 V and ?3.3 V. The device employs complimentary metal-oxide semiconductor/low-voltage transistor-transistor logic (CMOS/LVTTL) logic-compatible controls.The ADRF5026 is pin-compatible with the ADRF5027 low frequency cutoff version, which operates from 9 kHz to 44 GHz. The ADRF5026 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Narrow-Band Impedance Matching section for an example of a matched circuit that achieves a flat insertion loss response of 2.4 dB from 28 GHz to 43 GHz.The ADRF5026 comes in a 20-terminal, 3 mm ? 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.The ADRF5026 supports defense and aerospace applications (AQEC).Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5027 is a nonreflective, single-pole, double-throw (SPDT) radio frequency (RF) switch manufactured in a silicon process.The ADRF5027 operates from 9 kHz to 44 GHz with better than 3.8 dB of insertion loss and 43 dB of isolation. The ADRF5027 features an all off control, where both RF ports are in an isolation state. The ADRF5027 has a nonreflective design and both of the RF ports are internally terminated to 50 ?.The ADRF5027 requires a dual-supply voltage of +3.3 V and ?3.3 V. The device employs complimentary metal-oxide semiconductor/low-voltage transistor-transistor logic (CMOS/LVTTL) logic-compatible controls.The ADRF5027 is pin compatible with the ADRF5026 fast switching version, which operates from 100 MHz to 44 GHz.The ADRF5027 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Narrow-Band Impedance Matching section for an example of a matched circuit that achieves a low insertion loss response of 2.2 dB from 28 GHz to 43 GHz.The ADRF5027 comes in a 20-terminal, 3 mm ? 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5130 is a high power, reflective, 0.7 GHz to 3.8 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations.The ADRF5130 has high power handling of 43 dBm (maximum) and 0.1 dB compression (P0.1dB) of 46 dBm, with a low insertion loss of 0.6 dB at 2 GHz and 0.7 dB at 3.5 GHz. On-chip circuitry operates at a single, positive supply voltage of 5 V and typical supply current of 1.06 mA, making the ADRF5130 an ideal alternative to pin diode-based switches.The device comes in a RoHS compliant, compact, 24-lead, 4 mm ? 4 mm LFCSP package.Applications Cellular/4G infrastructure Wireless infrastructure Military and high reliability applications Test equipment Pin diode replacement

The ADRF5144 is a reflective, single pole double-throw (SPDT) switch manufactured in the silicon process.The ADRF5144 operates from 1 GHz to 20 GHz with typical insertion loss of 0.85 dB and typical isolation of 48 dB. The device has a radio frequency (RF) input power handling capability of 40 dBm average power and TBD dBm peak power for the insertion loss path. The ADRF5144 also supports extended frequency range of 9 kHz to 26.5 GHz with derated power handling capability below 1 GHz and above 20 GHz.The ADRF5144 draws a low current of 130 ?A on the positive supply of +3.3 V and 510 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5144 requires no additional driver circuitry, making it an ideal alternative to GaN and PIN diode-based switches.The ADRF5144 can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance will be maintained while the switching characteristics, linearity and power handling performance will be derated, see Table 2 in the data sheet.The ADRF5144 comes in a 20-lead, 3.0 mm ? 3.0 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +85?C.APPLICATIONSTest instrumentationMilitary radios, radars, and electronic counter measuresSATCOMGaN and PIN diode replacement

The ADRF5731 is a silicon, 4-bit digital attenuator with a 30 dB attenuation control range in 2 dB steps.This device operates from 100 MHz to 40 GHz with better than 3.5 dB of insertion loss. The ATTIN port of the ADRF5720 has a radio frequency (RF) input power handling capability of 26 dBm average and 30 dBm peak for all states.The ADRF5731 requires a dual supply voltage of +3.3 V and ?3.3 V. The device features serial peripheral interface (SPI), parallel mode control, and complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL) compatible controls.The ADRF5731 is pin compatible with the ADRF5721 low frequency cutoff version, which operates from 9 kHz to 40 GHz.The ADRF5731 RF ports are designed to match a characteristic impedance of 50 ?.The ADRF5731 comes in a 16-terminal, 2.5 mm ? 2.5 mm, RoHS compliant, land grid array (LGA) package and operates from ?40?C to +105?C.Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G millimeter wave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF6520 is a matched pair of fully differential low noise and low distortion programmable filters and variable gain amplifiers(VGAs). Each channel is capable of rejecting large, out of band interferers while reliably boosting the wanted signal, thus reducingthe bandwidth and resolution requirements on the analog-to-digital converters (ADCs). The excellent matching betweenchannels and their high spurious-free dynamic range over all gain and bandwidth settings make the ADRF6520 ideal forquadrature-based (IQ) communication systems with dense constellations, multiple carriers, and nearby interferers. Thefilter corners, enable, and dc offset correction loop enable are all programmable via a serial peripheral interface (SPI).The first VGA that precedes the filters offers 30 dB of continuous gain control with a maximum gain of 18 dB and sets a differentialinput impedance of 100 ?. The filters provide a four-pole Butterworth response with ?1 dB corner frequencies: 36 MHz,72 MHz, 144 MHz, 288 MHz, 432 MHz, 576 MHz, and 720 MHz. For operation beyond 720 MHz, the filter can be disabled andcompletely bypassed, thereby extending the ?1 dB bandwidth up to 1.25 GHz. A wideband rms detector is available tomonitor the signal at the filter inputs. A fixed gain amplifier of 6 dB immediately follows the filter. The postfilter VGA provides30 dB of continuous gain control with a maximum gain of 12 dB. The output buffers offer an additional 18 dB of gain andprovide a differential output impedance of 20 ?. The output buffers are capable of driving 1.5 V p-p into 100 ? loads at betterthan 55 dBc nominal for the third-order intermodulation distortion (IMD3). Independent, built in, dc offset correctionloops for each channel can be disabled via the SPI if fully dc-coupled operation is desired. The high-pass corner frequency isdetermined by external capacitors on the CHP1 and CHP2 pins and the postfilter VGA gain.The ADRF6520 operates from a 3.15 V to 3.45 V supply and consumes a maximum supply current of 425 mA. When fullydisabled, it consumes ?10 mA. The ADRF6520 is fabricated in an advanced silicon-germanium BiCMOS process and isavailable in a 32-lead, exposed pad LFCSP. Performance is specified over the ?40?C to +85?C temperature range.Applications Point-to-point and point-to-multipoint radios Baseband IQ receivers Diversity receivers ADC drivers Instrumentation Medical

The HMC394LP4(E) is a low noise GaAs HBT programmable 5-bit counter in 4x4 mm leadless surface mount package. This device allows continuous division from N= 2 to 32 at input frequencies up to 2.2 GHz. The output voltage swing is 800 mV with a duty cycle inversely proportional to N. The low additive SSB phase noise of -153 dBc/Hz at 100 KHz offset makes this counter an excellent choice for low noise synthesizer applications.APPLICATIONSProgrammable divider for offset synthesizer and variable divide by N applications: Satellite Communication Systems Point-to-Point and Point-to-Multi-Point Radios LMDS SONET

The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.Applications Wireless Local Loop

The HMC413QS16G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifi er can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control.Applications Cellular / PCS / 3G Portable & Infrastructure Wireless Local Loop

The HMC194AMS8E is a low-cost SPDT switch in an 8-lead MSOP packages for use in applications which require high isolation between two RF paths. The devices can control signals from DC to 3 GHz and have been optimized to provide extremely high isolation with minimal insertion loss in medium and low power applications. On chip circuitry allows positive voltage control operation at very low DC cur- rents with control inputs compatible with CMOS and most TTL logic families. RF1 and RF2 are reflective opens when ?OFF?.APPLICATIONS Cellular/PCS Base Stations Portable Wireless MMDS & WirelessLAN

The HMC284AMS8G & HMC284AMS8GE are low-cost SPDT switches in 8-lead grounded base MSOP packages. The design has been optimized to provide high isolation with minimal insertion loss for medium and low power applications. On-chip circuitry allows positive voltage control operation at very low DC currents with control inputs compatible with CMOS and most TTL logic families. In the ?OFF? state, RF1 and RF2 are non-reflective.APPLICATIONS Cellular/PCS Base Stations 2.4 GHz ISM 3.5 GHz Wireless Local Loop

The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.Applications CDMA & W-CDMA? GSM, GPRS & Edge? Base Stations & Repeaters