The LT5522 active downconverting mixer is optimized for high linearity downconverter applications including cable and wireless infrastructure. The IC includes a high speed differential LO buffer amplifier driving a double-balanced mixer. The LO buffer is internally matched for wideband, single-ended operation with no external components.The RF input port incorporates an integrated RF transformer and is internally matched over the 1.2GHz to 2.3GHz frequency range with no external components. The RF input match can be shifted down to 600MHz, or up to 2.7GHz, with a single shunt capacitor or inductor, respectively. The high level of integration minimizes the total solution cost, board space and system-level variation.The LT5522 delivers high performance and small size without excessive power consumption.*Operation over a wider frequency range is possible with reduced performance. Consult factory for information and assistance.Applications Cellular, PCS and UMTS Band Infrastructure CATV Downlink Infrastructure 2.4GHz ISM High Linearity Downmixer Applications

Demonstration circuit 653A is a dual 15A step-down DC/DC converter featuring the LTC3802EGN. The LTC3802EGN itself is a synchronous voltage mode controller. Output #1 of demonstration circuit 653A is a 3.3V / 15A rail and output #2 is a 2.5V / 15A rail. The input voltage range is 7V to 24V.The nominal switching frequency of the LTC3802 is 550kHz and its phase lockable synchronization range is 330kHz to 750kHz.

Demonstration circuit DC675C is for the evaluation of filter circuits using an LT1568. The LT1568 is a dual 2nd order active-RCfilterbuildingblockwithprecision ±0.75% capacitors and low noise op amps with 180MHz GBW trimmed to ±10% maximum variation. The ±10% GBW variation of the LT1568 op amps allows for minimizing the higher frequency error by decreasing resistor values. The cutoff or center frequency (fC) range of an LT1568 filter is 200kHz to 10MHz (5MHz for a bandpass filter). The low limit of 200kHz was chosen only to minimize resistor noise and DC offsets (using external capacitors the fC frequency can be less than 200kHz). For testing and evaluation, the DC675C assembly is configured as a single 4th order, 500kHz narrow passband bandpass filter. For other possible LT1568 configurations, the DC675C has unused pads for 0805 surface mount resistors and capacitors preconfigured with PCB traces to allow for the following high accuracy LT1568 filter circuits: 4th order lowpass filter 5th order lowpass filter 4th order narrow passband bandpass 4th order wide passband bandpass 4th order highpass filter Refer to the LT1568 data sheet for additional information about filter circuit configurations.

DC677A: Demo Board for the LTC3900 Synchronous Rectifier Driver for Forward Converters.

Demonstration circuit DC683 features LT1935 1.2MHz boost DC/DC converter with a 2A switch. The demo board is designed to generate 12V output from a 3.3V to 5.5V input voltage range and can provide 600mA at 12V from a 5V input.

DC697A: Demo Board for the LT1943 High Current Quad Output Regulator for TFT LCD Panels.

DC705A: Demo Board for the LTC4053-4.2 USB Compatible Lithium-Ion Battery Charger with Thermal Regulation.

DC709A: Demo Board for the LTC4557 Dual SIM/Smart Card Power Supply and Interface.

Demonstration circuits 721A-A and 721A-B are high current step-down converters for Intel VRM/VRD10 and VRM9 processor power applications. The 6-phase DC721A-A features two current-mode PolyPhaseTM controllers, the LTC3738CUHF (3-Phase Buck Controller for Intel VRM9/VRM10 with Active Voltage Positioning and the the LTC3731CUH (3-Phase, 600kHz, Synchronous Buck Switching Regulator Controller). and provides up to 120A output current. The DC721A-B is a single LTC3738 3-phase 65A output supply. The input voltage range for both demo boards is from 8V to 14V, and the output voltage is controlled by the VID setting.

Demonstration circuit 728 is a 1MHz Synchronous Step- Up DC/DC Converter featuring the LTC®3458EDE. The demo circuit demonstrates a DC/DC boost converter, with a 1.5A switch, providing 7V at 200mA to 800mA depending on input voltage, which ranges from 2V to 6V. The circuit demonstrates the advantages of output disconnect and inrush current limiting.

The ADP8140 provides high current control of up to four LED drivers. Each driver can sink up to 500 mA. The sink current is programmed for all four drivers with one external resistor.The device features a feedback output that controls an external power supply for optimal efficiency. The ADP8140 also protects the LEDs, power supply, and itself against thermal events, short circuits, overvoltages, and LED open circuits. Multiple ADP8140 ICs are easily connected in parallel to drive additional LED strings or higher current LEDs. The ADP8140 is available in a small, thermally enhanced, lead frame chip scale package (LFCSP).Applications High brightness LED lighting Large format LED backlighting

The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56% typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ?0.15 dB across the 2.7 GHz to 3.1 GHz frequency range.The ADPA1106 is ideal for pulsed applications such as marine, weather, and military radar.The ADPA1106 comes in a 32-lead, lead frame chip scale package, premolded cavity (LFCSP_CAV) and is specified for operation from ?40?C to +85?C.APPLICATIONSWeather radarMarine radarMilitary radar

The ADPA7007CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides a gain of 21.5 dB, an output power for 1 dB compression (P1dB) of 31 dBm, and a typical output thirdorder intercept (IP3) of 41 dBm. The ADPA7007CHIP requires 1400 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data was taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.Applications Military and space Test instrumentation

The ADPA7008CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (1 W) distributed power amplifier that operates from 20 GHz to 54 GHz. The amplifier provides a gain of 18 dB, an output power for 1 dB compression (P1dB) of 30.5 dBm, and a typical output third-order intercept (IP3) of 38 dBm at 22 GHz to 42 GHz. The ADPA7008CHIP requires 1500 mA from a 5 V supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.APPLICATIONSMilitary and spaceTest instrumentationSatellite communications

The ADPA9002 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), power amplifier that operates between dc and 10 GHz. The amplifier provides 15 dB of gain, 42 dBm of OIP3, and 31.5 dBm of saturated output power (PSAT) while requiring 385 mA from a 12 V supply. The ADPA9002 is self biased in normal operation and has an optional bias control for supply quiescent current (IDQ) adjustment. The amplifier is ideal for military and space and?test equipment applications. The ADPA9002 also features inputs and outputs that are internally matched to 50 ?, housed in a RoHS compliant, 5 mm ? 5 mm LFCSP premolded cavity package, making it compatible with high volume surface-mount technology (SMT) assembly equipment.Note that throughout this data sheet, multifunction pins, such as RFOUT/VDD, are referred to either by the entire pin name or by a single function of the pin, for example, VDD, when only that function is relevant.Applications Military and space Test instrumentation

The ADR1399 precision shunt reference features excellent temperature stability over a wide range of voltage, temperature, and quiescent current conditions. A temperature stabilizing loop is incorporated with the active Zener on a monolithic? substrate, which nearly eliminates changes in voltage with temperature. The subsurface Zener circuit is fully specified at a quiescent current IREF of 3 mA and offers minimal noise (1.44 ?V p-p, 0.1 Hz to 10 Hz) and excellent long-term stability (7 ppm/?kHr). The ADR1399 offers a lower output dynamic impedance (0.08 ?) than the LM399, reducing the effects of shunt resistor (RSHUNT) and the supply voltage variation on the reference output.Ideal applications for the ADR1399 include ultrastable digital voltmeters, precision calibration equipment, and ultrarepeatable analog-to-digital converters (ADCs). The simplicity of the basic pin configurations is shown in Figure 1. The 8-terminal LCC version offers force and sense pins for lower dynamic impedance and for Kelvin sensing. Table 1. Related Products Model Output Voltage (V) Initial Accuracy Range (mV) ADR1399 7.05 ?300 to +250 LTZ1000 7.2 ?200 to +300 LM399 6.95 ?200 to +350 LT1236 5 and 10 ?2.5 to +2.5 APPLICATIONS Precision voltage reference for multimeters Calibration equipment voltage standards Laboratory measurement equipment Industrial monitor and control instrumentation Ultrastable data convertors

The ADRF5020 is a general-purpose, single-pole, double-throw(SPDT) switch manufactured using a silicon process. It comesin a 3 mm ? 3 mm, 20-lead land grid array (LGA) package andprovides high isolation and low insertion loss from 100 MHz to30 GHz.This broadband switch requires dual supply voltages, +3.3 Vand ?2.5 V, and provides CMOS/LVTTL logic-compatiblecontrol.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, electronic counter measures (ECMs) Broadband telecommunications systems

The ADRF5026 is a nonreflective, single-pole, double-throw (SPDT) radio frequency (RF) switch manufactured in a silicon process.The ADRF5026 operates from 100 MHz to 44 GHz with better than 3.8 dB of insertion loss and 45 dB of isolation. The ADRF5026 features an all off control, where both RF ports are in an isolation state. The ADRF5026 has a nonreflective design and both of the RF ports are internally terminated to 50 ?. The ADRF5026 requires a dual-supply voltage of +3.3 V and ?3.3 V. The device employs complimentary metal-oxide semiconductor/low-voltage transistor-transistor logic (CMOS/LVTTL) logic-compatible controls.The ADRF5026 is pin-compatible with the ADRF5027 low frequency cutoff version, which operates from 9 kHz to 44 GHz. The ADRF5026 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Narrow-Band Impedance Matching section for an example of a matched circuit that achieves a flat insertion loss response of 2.4 dB from 28 GHz to 43 GHz.The ADRF5026 comes in a 20-terminal, 3 mm ? 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.The ADRF5026 supports defense and aerospace applications (AQEC).Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5027 is a nonreflective, single-pole, double-throw (SPDT) radio frequency (RF) switch manufactured in a silicon process.The ADRF5027 operates from 9 kHz to 44 GHz with better than 3.8 dB of insertion loss and 43 dB of isolation. The ADRF5027 features an all off control, where both RF ports are in an isolation state. The ADRF5027 has a nonreflective design and both of the RF ports are internally terminated to 50 ?.The ADRF5027 requires a dual-supply voltage of +3.3 V and ?3.3 V. The device employs complimentary metal-oxide semiconductor/low-voltage transistor-transistor logic (CMOS/LVTTL) logic-compatible controls.The ADRF5027 is pin compatible with the ADRF5026 fast switching version, which operates from 100 MHz to 44 GHz.The ADRF5027 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Narrow-Band Impedance Matching section for an example of a matched circuit that achieves a low insertion loss response of 2.2 dB from 28 GHz to 43 GHz.The ADRF5027 comes in a 20-terminal, 3 mm ? 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5130 is a high power, reflective, 0.7 GHz to 3.8 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations.The ADRF5130 has high power handling of 43 dBm (maximum) and 0.1 dB compression (P0.1dB) of 46 dBm, with a low insertion loss of 0.6 dB at 2 GHz and 0.7 dB at 3.5 GHz. On-chip circuitry operates at a single, positive supply voltage of 5 V and typical supply current of 1.06 mA, making the ADRF5130 an ideal alternative to pin diode-based switches.The device comes in a RoHS compliant, compact, 24-lead, 4 mm ? 4 mm LFCSP package.Applications Cellular/4G infrastructure Wireless infrastructure Military and high reliability applications Test equipment Pin diode replacement