GP2T020A120H
SemiQ
Description
1200V SiC MOSFET
Features:
- High-speed switching
- Reliable body diode
- All parts tested to greater than 1400V
- Driver source pin for gate driving
- Lower capacitance
- Higher efficiency
- Lower switching loss
- Longer creepage distance
Specifications:
- 1200V drain-source voltage
- 564W power dissipation
- 800mJ single pulse avalanche energy
- 0.8Ω gate input resistance
- 3.6V diode forward voltage
- -55°C to 175°C operating temperature range
Applications:
- Solar inverters
- EV charging stations
- Switch mode power supplies
- High-voltage DC/DC converters
- Uninterruptible Power Supplies (UPSs)
- Motor drives
- Induction heating and welding
Inventory
| Distributor | SKU | Stock | MOQ | 1 | 10 | 50 | 100 | 1,000 | 10,000 | |
|---|---|---|---|---|---|---|---|---|---|---|
| Mouser Electronics | 148-GP2T020A120H | 28 | 1 | $30.64 | $27.23 | $25.40 | $24.60 | $20.43 | $20.43 |
In stock