FQT1N80TF_WS

Fairchild Semiconductors

Description

FQT1N80TF_WS N-Channel MOSFET, 200 mA, 800 V QFET, 3+Tab-Pin SOT-223 Fairchild. Maximum Drain Source Resistance: 20 Ω. Minimum Gate Threshold Voltage: 3V. Maximum Gate Source Voltage: -30 V, +30 V. Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Category: Power MOSFET. Maximum Power Dissipation: 2.1 W. Typical Turn-On Delay Time: 10 ns. Transistor Material: Si., Fairchild Semiconductor