1200 V, 75 mΩ, TO-263-7 package, Industrial qualified, Discrete SiC MOSFET End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer. Features Stable RDS(ON) over temperature Available in package options with separate Kelvin source pin Extremely fast switching Reduction of heat-sink requirements Benefits Easier to drive (+15V gate drive) Improved system-level efficiency Rugged body diode (no need for external diode) Avalanche ruggedness Typical Applications Solar inverters and energy storage Onboard and fast DC EV-Charging Systems Motor control and drives Welding and inductive heating Auxiliary power supplies High-voltage DC/DC converters

BOARD DUAL 1200V DRIVER FOR MOSFET; Silicon Manufacturer:-; Silicon Core Number:-; Kit Application Type:Drivers; Application Sub Type:MOSFET Gate Driver; Kit Contents:Gate Driver Board; Product Range:-; SVHC:No SVHC (17-Dec-2015)

DIODE SCHOTTKY 600V 4A SIC TO220; Product Range:Z-Rec 600V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Continuous Forward Current If:6A; Total Capacitive Charge Qc:8.5nC; Diode Case Style:TO-220-F2; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Diode Type:SiC Schottky; Forward Current If(AV):4A; Forward Surge Current Ifsm Max:30A; Forward Voltage VF Max:1.7V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Semiconductor Technology:SiC

DIODE SCHOTTKY 600V 6A SIC TO220; Product Range:Z-Rec 600V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Continuous Forward Current If:7A; Total Capacitive Charge Qc:16nC; Diode Case Style:TO-220-F2; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Diode Type:SiC Schottky; Forward Current If(AV):6A; Forward Surge Current Ifsm Max:44A; Forward Voltage VF Max:1.8V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Semiconductor Technology:SiC

DIODE SCHOTTKY 1200V 5A SIC TO252; Product Range:Z-Rec 1200V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:17.5A; Total Capacitive Charge Qc:28nC; Diode Case Style:TO-252; No. of Pins:3 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Diode Type:SiC Schottky; Forward Current If(AV):5A; Forward Surge Current Ifsm Max:100A; Forward Voltage VF Max:1.8V; MSL:MSL 1 - Unlimited; No. of Pins:3Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Semiconductor Technology:SiC

MOSFET N-CH 1200V 31.6A SIC TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:31.6A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3.2V; Power Dissipation Pd:208W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Operating Temperature Min:-55°C

DIODE SCHOTTKY 4A 650V TO-220; Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:6A; Total Capacitive Charge Qc:10nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Diode Type:SiC Schottky; Forward Current If(AV):4A; Forward Surge Current Ifsm Max:31.9A; Forward Voltage VF Max:1.8V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Semiconductor Technology:SiC

DIODE SCHOTTKY 8A 650V TO-220; Product Range:Z-Rec 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:11A; Total Capacitive Charge Qc:20nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Diode Type:SiC Schottky; Forward Current If(AV):8A; Forward Surge Current Ifsm Max:80A; Forward Voltage VF Max:1.8V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Semiconductor Technology:SiC

MOSFET, N-CH, 1.2KV, 175DEG C, 283W;

MOSFET, N-CH, 1.2KV, 175DEG C, 469W;

MOSFET, N-CH, 1.2KV, 175DEG C, 556W;

MOSFET 1.2KV 30A 150DEG C 113.6W; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:113.6W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:C3M Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

MOSFET MODULE DUAL N CH 1.2KV 444A; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:444A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.6V; Power Dissipation Pd:1.5kW; Operating Temperature Max:175°C; Product Range:C2M Z-Rec Series; SVHC:No SVHC (15-Jan-2019)

EVALUATION BOARD SIC MOSFET; Silicon Manufacturer:Wolfspeed; Silicon Core Number:CAB450M12XM3; Kit Application Type:Power Management; Application Sub Type:SiC MOSFET; Kit Contents:Evaluation Board CAB450M12XM3; Product Range:-; SVHC:No SVHC (15-Jan-2019)

EVALUATION BOARD SIC MOSFET; Silicon Manufacturer:Wolfspeed; Silicon Core Number:CAS325M12HM2; Kit Application Type:Power Management; Application Sub Type:SiC MOSFET; Kit Contents:Evaluation Board CAS325M12HM2; Product Range:-; SVHC:No SVHC (15-Jan-2019)

Power Management IC Development Tools Gate Driver Evaluation Board

Diode 1700 V 40A Through Hole TO-247-2

N-Channel 1200 V 10A (Tc) 62.5W (Tc) Through Hole TO-247-3

MOSFET G3 SiC MOSFET/ Reel 900V, 120 mOhm

SIC SCHOTTKY DIODE, 650V, 20A, TO-247;