SIC SCHOTTKY DIODE 650V 39A TO247; Product Range:Z-Rec 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:39A; Total Capacitive Charge Qc:44.5nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; SVHC:No SVHC (20-Jun-2016); Forward Current If(AV):39A; Forward Surge Current Ifsm Max:162A; Forward Voltage VF Max:1.8V; Operating Temperature Max:175°C; Semiconductor Technology:SiC

MOSFET N-CH 1.7KV 72A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.6V; Power Dissipation Pd:520W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

MOSFET N-CH 1.7KV 5.3A TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.6V; Power Dissipation Pd:78W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (17-Dec-2015)

MOSFET N-CH 900V 35A TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:113W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (17-Dec-2015)

MOSFET N-CH 900V 11A TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:50W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (17-Dec-2015)

SIC SCHOTTKY DIODE SINGLE 31.5A TO247; Product Range:Z-REC Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:31.5A; Total Capacitive Charge Qc:52nC; Diode Case Style:TO-247; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2018); Packaging:Each

SIC SCHOTTKY DIODE SINGLE 39A TO-247; Product Range:Z-REC Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:39A; Total Capacitive Charge Qc:77.5nC; Diode Case Style:TO-247; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2018); Packaging:Each

ZFETTM SIC DMOSFET 1700V VDS;

N-Channel 1700 V 72A (Tc) 520W (Tc) Through Hole TO-247-4L

Diode 1700 V 40A Through Hole TO-247-2

MOSFET, N-CH, 1.2KV, 175DEG C, 283W;

MOSFET, N-CH, 1.2KV, 175DEG C, 469W;

MOSFET, N-CH, 1.2KV, 175DEG C, 556W;

SIC SCHOTTKY DIODE, 650V, 20A, TO-247;

SIC MOSFET, DUAL N-CH, 1.2KV/228A/MODULE;

Schottky Diodes & Rectifiers SiC 1200V 20A AUTO

SIC SCHOTTKY DIODE 650V 35A TO-220; Product Range:Z-Rec Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:35A; Total Capacitive Charge Qc:34nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; SVHC:No SVHC (20-Jun-2016); Forward Current If(AV):35A; Forward Surge Current Ifsm Max:104A; Forward Voltage VF Max:1.8V; Operating Temperature Max:175°C; Semiconductor Technology:SiC

1200 V, 75 mΩ, TO-263-7 package, Industrial qualified, Discrete SiC MOSFET End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer. Features Stable RDS(ON) over temperature Available in package options with separate Kelvin source pin Extremely fast switching Reduction of heat-sink requirements Benefits Easier to drive (+15V gate drive) Improved system-level efficiency Rugged body diode (no need for external diode) Avalanche ruggedness Typical Applications Solar inverters and energy storage Onboard and fast DC EV-Charging Systems Motor control and drives Welding and inductive heating Auxiliary power supplies High-voltage DC/DC converters

BOARD DUAL 1200V DRIVER FOR MOSFET; Silicon Manufacturer:-; Silicon Core Number:-; Kit Application Type:Drivers; Application Sub Type:MOSFET Gate Driver; Kit Contents:Gate Driver Board; Product Range:-; SVHC:No SVHC (17-Dec-2015)