300 KW INVERTER KIT; Silicon Manufacturer:Cree; Silicon Core Number:-; Kit Application Type:Motor Driver; Core Architecture:-; Core Sub-Architecture:-; Silicon Family Name:-; Kit Contents:Reference Design Kit CAB450M12XM3 Half-Bridge Module & CGD12HBXMP Gate Driver Tool; Product Range:-; SVHC:No SVHC (15-Jan-2019)

MOSFET MODULE DUAL N CH 1.2KV 450A; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:450A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:-; Operating Temperature Max:175°C; Product Range:-; SVHC:No SVHC (15-Jan-2019)

EVAL KIT FLYBACK CONVERTER; Silicon Manufacturer:Cree; Silicon Core Number:C2M1000170J; Kit Application Type:Power Management; Application Sub Type:Flyback Converter; Kit Contents:Eval Kit C2M1000170J; Product Range:-; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)

EVAL KIT SYNC BUCK-BOOST CONVERTER; Silicon Manufacturer:Cree; Silicon Core Number:C3M0075120K; Kit Application Type:Power Management; Application Sub Type:Synchronous Buck-Boost Converter; Kit Contents:Eval Kit C3M0075120K; Product Range:-; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)

MOSFET N-CH 1.7KV 72A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.6V; Power Dissipation Pd:520W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

MOSFET N-CH 1.7KV 5.3A TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.6V; Power Dissipation Pd:78W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (17-Dec-2015)

MOSFET N-CH 900V 35A TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:113W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (17-Dec-2015)

MOSFET N-CH 900V 11A TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:50W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:C2M Series; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (17-Dec-2015)

BOARD GATE DRIVER FOR SIC MOSFET; Silicon Manufacturer:-; Silicon Core Number:1ED020I12-F2; Kit Application Type:Drivers; Application Sub Type:MOSFET Gate Driver; Kit Contents:Gate Driver Board; Product Range:-; SVHC:No SVHC (17-Dec-2015)

SIC SCHOTTKY DIODE 650V 39A TO247; Product Range:Z-Rec 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:39A; Total Capacitive Charge Qc:44.5nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; SVHC:No SVHC (20-Jun-2016); Forward Current If(AV):39A; Forward Surge Current Ifsm Max:162A; Forward Voltage VF Max:1.8V; Operating Temperature Max:175°C; Semiconductor Technology:SiC

Diode 1700 V 40A Through Hole TO-247-2

MOSFET G3 SiC MOSFET/ Reel 900V, 120 mOhm

Power Management IC Development Tools Gate Driver Evaluation Board

SIC SCHOTTKY DIODE, 650V, 20A, TO-247;

SIC MOSFET, DUAL N-CH, 1.2KV/228A/MODULE;

N-Channel 1200 V 10A (Tc) 62.5W (Tc) Through Hole TO-247-3

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2A

DIODE SCHOTTKY 600V 2X8A SIC TO-247; Product Range:Z-Rec 600V Series; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:600V; Continuous Forward Current If:46A; Total Capacitive Charge Qc:42nC; Diode Case Style:TO-247; No. of Pins:3 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Diode Type:SiC Schottky; Forward Current If(AV):16A; Forward Surge Current Ifsm Max:80A; Forward Voltage VF Max:1.8V; No. of Pins:3Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Semiconductor Technology:SiC

DIODE SCHOTTKY 1200V 5A SIC TO-220-2; Product Range:Z-Rec 1200V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:17A; Total Capacitive Charge Qc:27nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Diode Type:SiC Schottky; Forward Current If(AV):8.2A; Forward Surge Current Ifsm Max:46A; Forward Voltage VF Max:1.8V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Semiconductor Technology:SiC

DIODE SCHOTTKY 1200V 9A SIC TO-252-2; Product Range:Z-Rec 1200V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:9A; Total Capacitive Charge Qc:27nC; Diode Case Style:TO-252; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Packaging:Each; Automotive Qualification Standard:-; Diode Type:SiC Schottky; Forward Current If(AV):23A; Forward Surge Current Ifsm Max:42A; Forward Voltage VF Max:1.8V; No. of Pins:2Pins; Operating Temperature Max:175°C; Operating Temperature Min:-55°C; Semiconductor Technology:SiC