NChannel Power MOSFET, VDSX Drain Source Voltage 250V

PChannel Power MOSFET, VDSX Drain Source Voltage -220V

Complimentary Pair Dual Channel Power MOSFET, VDSX Drain Source Voltage 160V

MOSFET AUDIO N 200V 8A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):-; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:125W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Id Max:8A; Voltage Vgs Max:20V

MOSFET AUDIO N CHANNEL 160V 16A TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:160V; On Resistance Rds(on):-; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; No. of Pins:2; MSL:- ;RoHS Compliant: Yes

MOSFET AUDIO P CH 200V 16A TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):-; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:250W; Transistor Case Style:TO-3; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Id Max:-16A; Voltage Vgs Max:-20V

MOSFET AUDIO NP CH 160V 8A TO-247; Transistor Polarity:N and P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:160V; On Resistance Rds(on):-; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:-; Transistor Case Style:TO-247; No. of Pins:5Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Continuous Drain Current Id N Channel:8A; Continuous Drain Current Id P Channel:-8A; Current Id Max:8A; Drain Source Voltage Vds N Channel:160V; Drain Source Voltage Vds P Channel:-160V; Module Configuration:Dual

Gold Metallised Multi-Purpose Silicon DMOS RF FET 60W - 12.5V -175MHz Push-Pull

Gold Metallised Multi-Purpose Silicon DMOS RF FET 10W - 12.5V - 500MHz Single Ended

Gold Metallised Multi-Purpose Silicon DMOS RF FET 2.5W - 12.5V - 1GHz Single Ended

MOSFET RF N CHANNEL SE 12V 2.5W 1GHZ SO8; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2A; Power Dissipation Pd:17.5W; Operating Frequency Min:1MHz; Operating Frequency Max:1GHz; RF Transistor Case:SOIC; Product Range:- ;RoHS Compliant: Yes

Gold Metallised Multi-Purpose Silicon DMOS RF FET 7.5W - 12.5V - 1GHz Single Ended

Gold Metallised Multi-Purpose Silicon DMOS RF FET 150W - 28V - 500MHz Push-Pull

Gold Metallised Multi-Purpose Silicon DMOS RF FET 40W - 28V - 500MHz Push-Pull

Gold Metallised Multi-Purpose Silicon DMOS RF FET 350W - 28V - 175MHz Push-Pull

Gold Metallised Multi-Purpose Silicon DMOS RF FET 10W - 28V - 1GHz Single Ended

Gold Metallised Multi-Purpose Silicon DMOS RF FET 150W - 28V - 175MHz Single Ended

Gold Metallised Multi-Purpose Silicon DMOS RF FET 300W - 50V - 175MHz Push-Pull

Silicon RF Small Signal NPN Transistor

Small Signal RF NPN Transistor