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2N2905A

Part Number : 2N2905A

TT electronics Semelab
Bipolar Transistors - BJT TRANS BI-POLAR SS

BD649.

Part Number : BD649.

TT electronics Semelab
TRANSISTOR, DARLINGTON TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:62.5W; DC Collector Current:8A; DC Current Gain hFE:750hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Av Current Ic:8A; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:8A; Current Ic hFE:3A; Full Power Rating Temperature:25°C; Hfe Min:750; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:62.5W; Transistor Type:Power Darlington; Voltage Vcbo:120V

BDV67A

Part Number : BDV67A

TT electronics Semelab
DARLINGTON TRANSISTOR, SOT-93; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:200W; DC Collector Current:16A; DC Current Gain hFE:3000hFE; Transistor Case Style:SOT-93; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (15-Jan-2019); Av Current Ic:16A; Collector Emitter Saturation Voltage Vce(on):2V; Continuous Collector Current Ic Max:16A; Current Ic Continuous a Max:16A; Current Ic hFE:10A; Full Power Rating Temperature:25°C; Hfe Min:1000; No. of Transistors:1; Power Dissipation Ptot Max:200W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:80V

BD948

Part Number : BD948

TT electronics Semelab
TRANSISTOR, PNP, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:40W; DC Collector Current:3A; DC Current Gain hFE:85hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; MSL:-; SVHC:No SVHC (15-Jan-2019); Alternate Case Style:SOT-78B; Application Code:GP; Collector Emitter Saturation Voltage Vce(on):700mV; Continuous Collector Current Ic Max:5A; Current Ic Continuous a Max:3A; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Gain Bandwidth ft Typ:3MHz; Hfe Min:40; No. of Transistors:1; Power Dissipation Ptot Max:40W; Termination Type:Through Hole; Voltage Vcbo:45V

2N6987UTX

Part Number : 2N6987UTX

TT electronics Semelab
Bipolar Transistors - BJT Obsolete 9/2019 20 Pin, SMT Quad PNP transistor

IRFF024

Part Number : IRFF024

TT electronics Semelab
N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

IRFY044C

Part Number : IRFY044C

TT electronics Semelab
N–Channel Power MOSFET for Hi-Rel Applications

2N3823

Part Number : 2N3823

TT electronics Semelab
Silicon Small Signal N-Channel JEFT

2N4416CSM

Part Number : 2N4416CSM

TT electronics Semelab
Small Signal N–Channel J–FET in A Hermetically Sealed Ceramic Surface Mount Package for High Reliability Applications, VGD Gate – Drain Voltage -30V

2N4416CASM

Part Number : 2N4416CASM

TT electronics Semelab
Small Signal N–Channel J–FET in A Hermetically Sealed Ceramic Surface Mount Package for High Reliability Applications, VGD Gate – Drain Voltage -35V

2N7085

Part Number : 2N7085

TT electronics Semelab
N–Channel Enhancement Mode Transistor

IRFY130

Part Number : IRFY130

TT electronics Semelab
N–Channel Power MOSFET for Hi-Rel Applications

2N2222AC1

Part Number : 2N2222AC1

TT electronics Semelab
Silicon Planar Epitaxial NPN Transistor

2N2906ACSM

Part Number : 2N2906ACSM

TT electronics Semelab
Silicon Planar Epitaxial PNP Transistor

Displaying 1 - 20 of 2618

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