Bipolar PNP Device in a Hermetically sealed TO18 Metal Package

High Voltage PNP Silicon Transistor

Bipolar NPN Device in a Hermetically sealed TO18 Metal Package

Silicon Planar Epitaxial PNP Transistor

DIODE HIREL HITEMP SIC REC TO257; Product Range:TRANSZORB SMCJ Series; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:600V; Continuous Forward Current If:10A; Total Capacitive Charge Qc:25nC; Diode Case Style:TO-257AA; No. of Pins:3 Pin; Junction Temperature Tj Max:225°C; Packaging:Each; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jun-2015); Diode Type:Schottky; Forward Current If(AV):10A; Forward Surge Current Ifsm Max:250A; Forward Voltage VF Max:1.8V; No. of Pins:3Pins; Operating Temperature Max:225°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +225°C

600V SiC Common Anode Schottky Diode

MOSFET N-CHANNEL TO39

Bipolar Transistors - BJT BIPOLAR POWER TRANSISTOR

Silicon Planar Epitaxial PNP Transistor

General Purpose PNP Silicon Transistor, VCBO Collector Base Voltage (IE= 0) -45V

Bipolar PNP Device in a Hermetically sealed TO18 Metal Package

Dual Fast Recovery Rectifier Diode

Silicon Carbide Power Schottky Rectifier Diode

MOSFET RF N CHANNEL SE 12V 2.5W 1GHZ SO8; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2A; Power Dissipation Pd:17.5W; Operating Frequency Min:1MHz; Operating Frequency Max:1GHz; RF Transistor Case:SOIC; Product Range:- ;RoHS Compliant: Yes

Gold Metallised Multi-Purpose Silicon DMOS RF FET 10W - 28V - 1GHz Single Ended

Ultra Fast Recovery Power Rectifier, Pad Finish Au Finished

SiC Schottky Diode

PChannel Enhancement Mode MOSFET

Ultrafast Power Rectifier Diode in Ceramic Surface Mount Package

NPN Epitaxial Base Darlington Power Transistor, VCBO Collector Emitter Voltage (Open Base) 60V