TRANSISTOR, DARLINGTON TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:62.5W; DC Collector Current:8A; DC Current Gain hFE:750hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Av Current Ic:8A; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:8A; Current Ic hFE:3A; Full Power Rating Temperature:25°C; Hfe Min:750; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:62.5W; Transistor Type:Power Darlington; Voltage Vcbo:120V

Bipolar Transistors - BJT TRANS BI-POLAR SS

Bipolar Transistors - BJT

Bipolar Transistors - BJT Obsolete 9/2019 20 Pin, SMT Quad PNP transistor

Bipolar Transistors - BJT

TRANSISTOR, DARLINGTON TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:-; Power Dissipation Pd:300W; DC Collector Current:50A; DC Current Gain hFE:400hFE; Transistor Case Style:TO-3; No. of Pins:2Pins; Operating Temperature Max:175°C; MSL:-; SVHC:No SVHC (15-Jan-2019); Av Current Ic:60A; Continuous Collector Current Ic Max:50A; Current Ic Continuous a Max:50A; Current Ic hFE:25A; Full Power Rating Temperature:25°C; Hfe Min:1000; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Power Dissipation Ptot Max:300W; Transistor Type:Power Darlington; Voltage Vcbo:60V

DARLINGTON TRANSISTOR, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:90W; DC Collector Current:10A; DC Current Gain hFE:200hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (15-Jan-2019); Av Current Ic:10A; Collector Emitter Saturation Voltage Vce(on):-2V; Continuous Collector Current Ic Max:10A; Current Ic Continuous a Max:10A; Current Ic hFE:3A; Device Marking:BDT62A; Full Power Rating Temperature:25°C; Hfe Min:1000; No. of Transistors:1; Power Dissipation Ptot Max:90W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:80V

DARLINGTON TRANSISTOR, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:90W; DC Collector Current:10A; DC Current Gain hFE:3000hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; MSL:-; SVHC:No SVHC (15-Jan-2019); Av Current Ic:10A; Collector Emitter Saturation Voltage Vce(on):2V; Continuous Collector Current Ic Max:10A; Current Ic Continuous a Max:10A; Current Ic hFE:3A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:50kHz; Hfe Min:1000; No. of Transistors:1; Power Dissipation Ptot Max:90W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:80V

TRANSISTOR, DARLINGTON TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:62.5W; DC Collector Current:8A; DC Current Gain hFE:200hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (15-Jan-2019); Av Current Ic:8A; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:8A; Current Ic hFE:3A; Full Power Rating Temperature:25°C; Hfe Min:750; No. of Transistors:1; Power Dissipation Ptot Max:62.5W; Transistor Type:Power Darlington

TRANSISTOR, PNP TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:20MHz; Power Dissipation Pd:125W; DC Collector Current:-15A; DC Current Gain hFE:40hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Application Code:GP; Continuous Collector Current Ic Max:15A; Current Ic hFE:5A; Full Power Rating Temperature:25°C; Hfe Min:40; No. of Transistors:1; Power Dissipation Ptot Max:125W; Transistor Type:Power Bipolar; Voltage Vcbo:60V

TRANSISTOR, NPN TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency ft:-; Power Dissipation Pd:40W; DC Collector Current:5A; DC Current Gain hFE:20hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Application Code:GP; Continuous Collector Current Ic Max:5A; Current Ic hFE:500mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Hfe Min:40; No. of Transistors:1; Power Dissipation Ptot Max:40W; Transistor Type:Power Bipolar; Voltage Vcbo:120V

N-Channel Enhancement Mode Power MOSFET

MOSFET HI-REL N CH 60V 0.2A LCC1; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:800mV; Power Dissipation Pd:300mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Id Max:200mA; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:40V

N–Channel Power MOSFET

N–Channel Power MOSFET

N–Chanel Enhancement Mode Mosfet

N–Channel Power MOSFET

N–Channel Power MOSFET for Hi-Rel Applications

Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications

NPN SiliconTransistor