SemiQ
1200V SiC MOSFET
Features:
High-speed switching
Reliable body diode
All parts tested to greater than 1400V
Driver source pin for gate driving
Lower capacitance
Higher efficiency
Lower switching loss
Longer creepage distance
Specifications:
1200V drain-source voltage
564W power dissipation
800mJ single pulse avalanche energy
0.8Ω gate input resistance
3.6V diode forward voltage
-55°C to 175°C operating temperature range
Applications:
Solar inverters
EV charging stations
Switch mode power supplies
High-voltage DC/DC converters
Uninterruptible Power Supplies (UPSs)
Motor drives
Induction heating and welding