Description

1200V SiC MOSFET

Features:

• High-speed switching
• Reliable body diode
• All parts tested to greater than 1400V
• Driver source pin for gate driving
• Lower capacitance
• Higher efficiency
• Lower switching loss
• Longer creepage distance

Specifications:

• 1200V drain-source voltage
• 564W power dissipation
• 800mJ single pulse avalanche energy
• 0.8Ω gate input resistance
• 3.6V diode forward voltage
• -55°C to 175°C operating temperature range

Applications:

• Solar inverters
• EV charging stations
• Switch mode power supplies
• High-voltage DC/DC converters
• Uninterruptible Power Supplies (UPSs)
• Motor drives
• Induction heating and welding