Nonreflective, 100 MHz to 44 GHz Silicon SP4T Switch Features: Ultrawideband frequency range: 100 MHz to 44 GHz Nonreflective 50 Ω design Low insertion loss: 1.8 dB up to 18 GHz 2.8 dB up to 40 GHz 3.2 dB up to 44 GHz High isolation: 50 dB at 18 GHz 39 dB at 40 GHz 35 dB at 44 GHz High input linearity: P0.1dB: 26 dBm typical IP3: 47 dBm typical High power handling 24 dBm through path 24 dBm terminated path All off state control Logic select control No low frequency spurs Settling time (0.1 dB final RF output): 30 ns 24-terminal, 3 mm × 3 mm land grid array (LGA) package Pin compatible with ADRF5043, low frequency cutoff version

Nonreflective, 100 MHz to 44 GHz Silicon SP4T Switch Features: Ultrawideband frequency range: 100 MHz to 44 GHz Nonreflective 50 Ω design Low insertion loss: 1.8 dB up to 18 GHz 2.8 dB up to 40 GHz 3.2 dB up to 44 GHz High isolation: 50 dB at 18 GHz 39 dB at 40 GHz 35 dB at 44 GHz High input linearity: P0.1dB: 26 dBm typical IP3: 47 dBm typical High power handling 24 dBm through path 24 dBm terminated path All off state control Logic select control No low frequency spurs Settling time (0.1 dB final RF output): 30 ns 24-terminal, 3 mm × 3 mm land grid array (LGA) package Pin compatible with ADRF5043, low frequency cutoff version

Nonreflective, 9 kHz to 44 GHz Silicon SP4T Switch Features: Ultrawideband frequency range: 9 kHz to 44 GHz Nonreflective 50 Ω design Low insertion loss: 1.5 dB at 18 GHz 2.4 dB at 40 GHz 2.5 dB at 44 GHz High isolation: 44 dB at 18 GHz 39 dB at 40 GHz 36 dB at 44 GHz High input linearity: P0.1dB: 26 dBm typical IP3: 48 dBm typical High power handling 24 dBm through path 24 dBm terminated path All off state control Logic select control No low frequency spurs Settling time (0.1 dB final RF output): 6 μs 24-terminal, 3 mm × 3 mm LGA package Pin compatible with ADRF5042, fast switching version

100 MHz to 30 GHz, Silicon, SP4T Switch Features: Ultrawideband frequency range: 100 MHz to 30 GHz Nonreflective 50 Ω design Low insertion loss: 2.6 dB at 20 GHz to 30 GHz High isolation: 43 dB at 20 GHz to 30 GHz High input linearity P1dB: 28 dBm typical IP3: 50 dBm typical High power handling 24 dBm through path 24 dBm terminated path No low frequency spurious 0.1 dB settling time (50% VCTL to 0.1 dB of final RF output): 37 ns 24-terminal LGA package

100 MHz to 30 GHz, Silicon, SP4T Switch Features: Ultrawideband frequency range: 100 MHz to 30 GHz Nonreflective 50 Ω design Low insertion loss: 2.6 dB at 20 GHz to 30 GHz High isolation: 43 dB at 20 GHz to 30 GHz High input linearity P1dB: 28 dBm typical IP3: 50 dBm typical High power handling 24 dBm through path 24 dBm terminated path No low frequency spurious 0.1 dB settling time (50% VCTL to 0.1 dB of final RF output): 37 ns 24-terminal LGA package

Silicon SP4T Switch, Reflective, 100 MHz to 44 GHz Features: Ultrawideband frequency range: 100 MHz to 44 GHz Reflective design Low insertion loss: 1.5 dB at 18 GHz 2.5 dB at 40 GHz 3.0 dB at 44 GHz High isolation: 46 dB at 18 GHz 33 dB at 40 GHz 31 dB at 44 GHz High input linearity: P0.1dB: 27.5 dBm typical  IP3: 50 dBm typical   High RF input power handling Through path: 27 dBm   Hot switching: 27 dBm No low frequency spurious 0.1 dB RF settling time: 50 ns   20-terminal, 3 mm × 3 mm, RoHS-compliant, LGA package  

Silicon SP4T Switch, Reflective, 1 GHz to 60 GHz Features:Ultrawideband frequency range: 1 GHz to 60 GHzReflective designLow insertion loss2.1 dB typical up to 40 GHz3.0 dB typical up to 55 GHz3.2 dB typical up to 60 GHzHigh input linearityP0.1dB: 24 dBm typicalIP3: 45 dBm typicalHigh RF power handlingThrough path: 24 dBmHot switching: 24 dBmRF switching time: 25 ns0.1 dB RF settling time: TBD ns24-terminal, 3 mm x 3 mm land grid array (LGA) package

Silicon SPDT Switch, Reflective, 24 GHz to 32 GHz Features: Reflective design Low insertion loss: 1.1 dB High isolation: 38 dB High input linearity P0.1dB: 37 dBm IP3: 65 dBm  RF settling time (0.1 dB final RF output): 70 ns High RF power handling 28 dBm average 36 dBm peak 3.3 V single-supply operation Internal negative voltage generator 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array package

High Linearity, Silicon SP4T Switch, 1.8 GHz to 3.8 GHz Features: Reflective design Low Insertion Loss 0.35 dB to 2.8 GHz typical 0.40 dB to 3.8 GHz typical High power handling at TCASE = 105°C Long-term (>10 years) average Continuous wave power: 39 dBm LTE signal Average power: 39 dBm Peak power: 49 dBm High input linearity, IP3: 84 dBm typical ESD ratings HBM: 2000 V, Class 2 CDM: 1000 V, Class C3 Single-supply operation, integrated NVG Positive control, LVCMOS-/LVTTL- compatible 4 mm x 4 mm, 22-terminal LGA package

Die on Carrier, Silicon Digital Attenuator, 0.5 dB LSB, 6-Bit, 100 MHz to 40 GHz Features:Ultrawideband frequency range: 100 MHz to 40 GHzAttenuation range: 31.5 dB with 0.5 dB stepsBond pads for wire bond and ribbon bondLow insertion loss1.7 dB typical up to 18 GHz2.2 dB typical up to 26 GHz3.2 dB typical up to 40 GHzAttenuation accuracy(0.10 + 2.0% of attenuation state) typical up to 26 GHz(0.13 + 1.5% of attenuation state) typical up to 35 GHz(0.30 + 1.5% of attenuation state) typical up to 40 GHzTypical step error0.12 dB typical up to 26 GHz0.30 dB typical up to 35 GHz0.60 dB typical up to 40 GHzHigh input linearityP0.1dB insertion loss state: 31 dBm typicalP0.1dB other attenuation states: 28 dBm typicalIP3: 50 dBm typicalHigh RF power handling26 dBm steady state average31 dBm steady state peakTight distribution in relative phaseNo low frequency spurious signalsSPI and parallel mode control, CMOS/LVTTL compatibleRF amplitude settling time (0.1 dB of final RF output): 250 ns18-pad, 3.171 mm 1.616 mm, die on carrier [CHIP]

Dual-Channel, 3.3 GHz to 4.0 GHz, 20 W Receiver Front End Features: Integrated dual-channel RF front end 2-stage LNA and high power silicon SPDT switch On-chip bias and matching Single-supply operation High power handling at TCASE = 105°C LTE average power (9 dB PAR) full lifetime: 43 dBm Gain High gain mode: 36 dB typical at 3.6 GHz Low gain mode: 17 dB typical at 3.6 GHz Low noise figure High gain mode: 1.05 dB typical at 3.6 GHz Low gain mode: 1.05 dB typical at 3.6 GHz High isolation RXOUT-CHA and RXOUT-CHB: 47 dB typical TERM-CHA and TERM-CHB: 75 dB typical Low insertion loss: 0.5 dB typical at 3.6 GHz High OIP3: 35 dBm typical Power-down mode and low gain mode Low supply current High gain mode: 95 mA typical at 5 V Low gain mode: 48 mA typical at 5 V Power-down mode: 13 mA typical at 5 V Positive logic control 6 mm × 6 mm, 40-lead LFCSP package Pin compatible with the ADRF5515 and the ADRF5519, and the 10 W versions, ADRF5545A and ADRF5549

Dual-Channel, 2.3 GHz to 2.8 GHz, 20 W Receiver Front End Features: Integrated dual-channel RF front end 2-stage LNA and high power silicon SPDT switch On-chip bias and matching Single-supply operation High power handling at TCASE = 105°CLTE average power (9 dB PAR) full lifetime: 43 dBmGainHigh gain mode: 35 dB typical at 2.6 GHzLow gain mode: 14 dB typical at 2.6 GHzLow noise figureHigh gain mode: 1.0 dB typical at 2.6 GHzLow gain mode: 1.0 dB typical at 2.6 GHzHigh isolationRXOUT-CHA and RXOUT-CHB: 45 dB typicalTERM-CHA and TERM-CHB: 60 dB typicalLow insertion loss: 0.5 dB typical at 2.6 GHzHigh OIP3: 32 dBm typicalPower-down mode and low gain modeLow supply currentHigh gain mode: 110 mA typical at 5 VLow gain mode: 36 mA typical at 5 VPower-down mode: 12 mA typical at 5 VPositive logic control6 mm 6 mm, 40-lead LFCSP packagePin compatible with the ADRF5545A and ADRF5549 10 W versions

Dual-Channel, 2.3 GHz to 2.8 GHz, 20 W Receiver Front End Features: Integrated dual-channel RF front end 2-stage LNA and high power silicon SPDT switch On-chip bias and matching Single-supply operation High power handling at TCASE = 105°CLTE average power (9 dB PAR) full lifetime: 43 dBmGainHigh gain mode: 35 dB typical at 2.6 GHzLow gain mode: 14 dB typical at 2.6 GHzLow noise figureHigh gain mode: 1.0 dB typical at 2.6 GHzLow gain mode: 1.0 dB typical at 2.6 GHzHigh isolationRXOUT-CHA and RXOUT-CHB: 45 dB typicalTERM-CHA and TERM-CHB: 60 dB typicalLow insertion loss: 0.5 dB typical at 2.6 GHzHigh OIP3: 32 dBm typicalPower-down mode and low gain modeLow supply currentHigh gain mode: 110 mA typical at 5 VLow gain mode: 36 mA typical at 5 VPower-down mode: 12 mA typical at 5 VPositive logic control6 mm 6 mm, 40-lead LFCSP packagePin compatible with the ADRF5545A and ADRF5549 10 W versions

Dual-Channel, 2.4 GHz to 4.2 GHz Receiver Front End Features: Integrated dual-channel RF front end 2-stage LNA and high power SPDT switch On-chip bias and matching Single supply operation Gain High gain mode: 32 dB typical at 3.6 GHz Low gain mode: 16 dB typical at 3.6 GHz Low noise figure High gain mode: 1.45 dB typical at 3.6 GHz Low gain mode: 1.45 dB typical at 3.6 GHz High isolation RXOUT-CHA and RXOUT-CHB: 47 dB typical TERM-CHA and TERM-CHB: 52 dB typical Low insertion loss: 0.65 dB typical at 3.6 GHz High power handling at TCASE = 105°C Full lifetime LTE average power (9 dB PAR): 40 dBm Single event (<10 sec operation) LTE average power (9 dB PAR): 43 dBm High OIP3: 32 dBm typical Power-down mode and low gain mode for LNA Low supply current High gain mode: 86 mA typical at 5 V Low gain mode: 36 mA typical at 5 V Power-down mode: 12 mA typical at 5 V Positive logic control 6 mm × 6 mm, 40-lead LFCSP package

Dual-Channel, 3.7 GHz to 5.3 GHz, Receiver Front End Features: Integrated dual-channel RF front end 2-stage LNA and high power SPDT switch On-chip bias and matching Single supply operation Gain High gain mode: 33 dB typical at 4.6 GHz Low gain mode: 18 dB typical at 4.6 GHz Low noise figure High gain mode: 1.6 dB typical at 4.6 GHz Low gain mode: 1.6 dB typical at 4.6 GHz High channel to channel isolation  Between RxOUT-ChA and RxOUT-ChB: 45 dB typical Between TERM-ChA and TERM-ChB: 53 dB typical  Low insertion loss: 0.5 dB typical at 4.6 GHz High power handling at TCASE = 105°C Full lifetime LTE average power (9 dB PAR): 40 dBm Single event (<10 sec operation) LTE average power (9 dB PAR): 43 dBm High OIP3: 31 dBm typical Power-down mode and low gain mode for LNA Low supply current High gain mode: 86 mA typical at 5 V Low gain mode: 36 mA typical at 5 V Power-down mode: 12 mA typical at 5 V Positive logic control 40-lead, 6 mm × 6 mm LFCSP 

0.5 dB LSB, 6-Bit, Silicon Digital Attenuator, 9 kHz to 40 GHz Features: Ultrawideband frequency range: 9 kHz to 40 GHz Attenuation range: 0.5 dB steps to 31.5 dB Low insertion loss with impedance match 2.0 dB up to 18 GHz 2.8 dB up to 26 GHz 4.5 dBup to 40 GHz Attenuation accuracy with impedance match ±(0.20 + 1.0% of attenuation state) up to 18 GHz ±(0.20 + 1.5% of attenuation state) up to 26 GHz ±(0.40+ 3.0% of attenuation state) up to 40 GHz Typical step error with impedance match ±0.25 dB up to 26 GHz ±0.65 dB up to 40 GHz High input linearity P0.1dB insertion loss state: 30 dBm P0.1dB other attenuation states: 27 dBm IP3: 50 dBm typical High RF input power handling: 27 dBm average, 30 dBm peak Tight distribution in relative phase No low frequency spurious signals SPI and parallel mode control, CMOS/LVTTL compatible RF amplitude settling time (0.1 dB of final RF output): 8 µs 24-terminal, 4 mm × 4 mm LGA package Pin-compatible with ADRF5730, fast switching version

2 dB LSB, 4-Bit, Silicon Digital Attenuator, 100 MHz to 40 GHz Features: Ultrawideband frequency range: 100 MHz to 40 GHz Attenuation range: 2 dB steps to 30 dB Low insertion loss 1.7 dB to 18 GHz 2.2 dB to 26 GHz 3.5 dB to 40 GHz Attenuation accuracy ±(0.1 + 2.0%) of attenuation state up to 18 GHz ±(0.2 + 2.5%) of attenuation state up to 26 GHz ±(0.5 + 10.0%) of attenuation state up to 40 GHz High RF input power handling: 26 dBm average, 30 dBm peak Tight distribution in relative phase Typical step error ±0.15 dB to 18 GHz ±0.20 dB to 26 GHz ±0.60 dB to 40 GHz High input linearity P0.1dB insertion loss state: 30 dBm P0.1dB other attenuation states: 26 dBm IP3: 50 dBm typical No low frequency spurious signals SPI and parallel mode control, CMOS/LVTTL compatible RF amplitude settling time (0.1 dB of final RF output): 230 ns 2.5 mm × 2.5 mm, 16-terminal LGA package Pin compatible with ADRF5721, low frequency cutoff version

2 dB LSB, 4-Bit, Silicon Digital Attenuator, 10 MHz to 60 GHz Features: Ultrawideband frequency range: 10 MHz to 60 GHz Attenuation range: 2 dB steps to 22 dB Low insertion loss 1.4 dB up to 20 GHz 2.2 dB up to 44 GHz 3.3 dB up to 55 GHz Attenuation accuracy (0.1 + 1.0% of state) up to 20 GHz (0.2 + 3.0% of state) up to 44 GHz (0.2 + 7.0% of state) up to 55 GHz Typical step error 0.30 dB up to 20 GHz 0.50 dB up to 44 GHz 0.60 dB up to 55 GHz High input linearity P0.1dB: 25.5 dBm typical IP3: 45 dBm typical High RF input power handling: 24 dBm average, 24 dBm peak Tight distribution in relative phase No low frequency spurious signals Parallel mode control, CMOS and LVTTL compatible RF amplitude settling time (0.1 dB of final RF output): 175 ns/li> 16-terminal, 2.5 mm 2.5 mm, RoHS compliant LGA package

Low Frequency to 3 GHz, Dual VGA with Output Common-Mode and DC Offset Control Features: Dual, matched VGAs Maximum voltage gain: 18 dB Gain control attenuation range: 21 dB typical for TA = 25°C ±1 dB gain flatness bandwidth: 2.5 GHz typical IMD2 and IMD3 (1.5 V p-p output level) −56.8 dBc typical and −75 dBc typical, respectively, at VGN = 1.5 V, 980 MHz and 1000 MHz tones HD2 and HD3 (1.5 V p-p output level) −75 dBc typical and −73.7 dBc typical, respectively, at VGN = 1.5 V, fundamental at 500 MHz −55.9 dBc typical and −57.5 dBc typical, respectively, at VGN = 1.5 V, fundamental at 1 GHz Noise figure: 10.5 dB typical at maximum gain and at 500 MHz 14.8 dB at maximum gain and at 2 GHz Noise figure decreases dB for dB with gain backoff 100 differential input impedance ≤ 16 differential output impedance Programmable Output DC offset nominal range: ± 400 mV Output common-mode control: > ± 200 mV for VOCM = ±0.2 V Single- or dual-supply operation with power-down feature Single supply: VPOS = 5 V, VNEG = 0 V (nominal) Dual supply: VPOS = 3 V, VNEG = −2 V (nominal)

450 MHz to 2800 MHz, DPD RFIC with Integrated Fractional-N PLL and VCO Features: DPD receiver with integrated fractional-N PLL RF input frequency range: 450 MHz to 2800 MHz  Internal LO input frequency range: 450 MHz to 2800 MHz  Dual RF inputs with SPDT absorptive RF switches Integrated RF balun for single-ended 50 Ω input Integrated VCO to cover complete RF input range  Digital programmable LO phase offset and dc nulling  Programmable via 4-wire SPI  56-lead, 8 mm × 8 mm LFCSP