Description

Die on Carrier, Silicon Digital Attenuator, 0.5 dB LSB, 6-Bit, 100 MHz to 40 GHz Features:Ultrawideband frequency range: 100 MHz to 40 GHzAttenuation range: 31.5 dB with 0.5 dB stepsBond pads for wire bond and ribbon bondLow insertion loss1.7 dB typical up to 18 GHz2.2 dB typical up to 26 GHz3.2 dB typical up to 40 GHzAttenuation accuracy(0.10 + 2.0% of attenuation state) typical up to 26 GHz(0.13 + 1.5% of attenuation state) typical up to 35 GHz(0.30 + 1.5% of attenuation state) typical up to 40 GHzTypical step error0.12 dB typical up to 26 GHz0.30 dB typical up to 35 GHz0.60 dB typical up to 40 GHzHigh input linearityP0.1dB insertion loss state: 31 dBm typicalP0.1dB other attenuation states: 28 dBm typicalIP3: 50 dBm typicalHigh RF power handling26 dBm steady state average31 dBm steady state peakTight distribution in relative phaseNo low frequency spurious signalsSPI and parallel mode control, CMOS/LVTTL compatibleRF amplitude settling time (0.1 dB of final RF output): 250 ns18-pad, 3.171 mm 1.616 mm, die on carrier [CHIP]