70 dB, Logarithmic Detector/Controller SMT, 1 - 8000 MHz Features: Wide Dynamic Range: up to 70 dB High Accuracy: ±1 dB with 60 dB Range Up To 6 GHz Fast: 10ns Output Response Time Supply Voltage: +5V Power-Down Mode Excellent Stability over Temperature Buffered Temperature Sensor Output 4x4mm Leadless SMT Package

GaAs, InGaP, HBT, MMIC, Ultralow Phase Noise, Distributed Amplifier, 2 GHz to 18 GHz Features:Ultralow phase noise: 160 dBc/Hz typical at 10 kHzOutput power for 1 dB compression (P1dB): 15 dBm typical at 2 GHz to 12 GHz frequency rangeGain: 13.5 dB typical at 2 GHz to 12 GHz frequency rangeOutput third-order intercept (IP3): 27 dBm typical at 2 GHz to 12 GHz frequency rangeSupply voltage: 5.0 V at 64 mA typical50 matched input/output32-terminal, ceramic, leadless chip carrier (LCC)

Logarithmic Detector Controller SMT, 0.001 - 10.0 GHz Features: Wide Dynamic Range: Up to 63 dB High Accuracy: ±1 dB with 54 dB Range Up to 8 GHz Supply Voltage: +5V Excellent Stability over Temperature Buffered Temperature Sensor Output Compact 4x4mm Leadless SMT Package

Low Noise Amplifier SMT, 0.55 - 1.2 GHz Features: Noise Figure: 0.5 dB Gain: 16 dB Output IP3: +37 dBm Single Supply: +3V to +5V 50 Ohm Matched Input/Output 16 Lead 3x3mm QFN Package: 9 mm²

0.1 GHz to 6.0 GHz, 0.5 dB LSB, 6-Bit, GaAs Digital Attenuator Features: Attenuation range: 0.5 dB (LSB) steps to 31.5 dB Low insertion loss: 1.6 dB at 3 GHz Excellent attenuation accuracy High linearity Input 0.1dB compression (P0.1dB): 33 dBm typical Input third-order intercept (IP3): 55 dBm typical High RF input power handling: 28 dBm Low phase shift: 25° at 3 GHz Pin compatible to the HMC1122 See data sheet for additional featuresHMC624A-EP Supports defense and aerospace applications (AQEC standard) Download HMC624A-EP data sheet (pdf) Extended industrial temperature range: −55°C to +105°C Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available upon request

SMT Driver Amplifier, 5.5 - 17 GHz Features: Gain: 30 dB P1dB: +23 dBm Saturated Power: +23.8 dBm @ 24% PAE Supply Voltage: +5V @180 mA 50 Ohm Matched Input/Output 24 Lead Ceramic 4x4mm SMT Package: 16mm²

SMT Driver Amplifier, 5 - 20 GHz Features: Gain: 21 dB P1dB: +22 dBm Saturated Power: +23 dBm @ 17% PAE Single Supply Voltage: +5V @180 mA 50 Ohm Matched Input/Output 24 Lead Ceramic 4x4mm SMT Package: 16mm²

Wideband MMIC VCO with Buffer Amplifier 8.0 - 16.0 GHz Features: Wide Tuning Bandwidth Pout: +6 dBm Low SSB Phase Noise: -92 dBc/Hz @100 kHz No External Resonator Needed Single Positive Supply: +5V @ 75 mA Ceramic Leadless SMT Package: 16 mm²

9.3 GHz Latched Comparator with RSPECL Output Stage Features: Equivalent input bandwidth: 9.3 GHz typical Propagation delay: 85 ps typical Overdrive and slew rate dispersion: 10 ps typical Input signal minimum pulse width: 60 ps typical Resistor programmable hysteresis Differential latch control Power dissipation: 140 mW typical 16-terminal, 3 mm × 3 mm, ceramic leadless chip carrier (LCC) 16-lead lead frame chip scale package (LFCSP)

GaAs MMIC I/Q Upconverter, 37 - 40 GHz Features: Conversion Gain: 10 dB Sideband Rejection: 17 dBc High Output IP3: +27 dBm 16 Lead 5x5 mm SMT Ceramic Package: 25 mm2

BiCMOS Mixer w/Integrated LO Amplifier, 700 - 1000 MHz Features: High Input IP3: +32 dBm Low Conversion Loss: 7 dB 24 Lead 4x4mm SMT Package: 16mm2 Low LO Drive: 0 dBm Upconversion & Downconversion Applications

7 GHz Integer-N Synthesizer SMT Features: Ultra Low SSB Phase Noise Floor: -153 dBc/Hz @ 10 kHz offset @ 100 MHz Reference Frequency. Programmable Divider (N= 16 - 516) Operating up to 7 GHz Open Collector Output Buffer Amplifiers for Interfacing w/ Op-Amp Based Loop Filter Reversible Polarity PFD w/ Lock Detect Output 32 Lead 5x5mm SMT Package: 25mm

28 Gbps EML Driver Features: Operation up to 28.3 Gbps Low DC Power Dissipation, 0.12W for 1.5VP-P swing @ 3.3V supply 0.50W for 2.3Vpp swing @ 6V supply Adjustable Output Amplitude from 1.2VP-P to 2.3VP-P 16 Lead 3x3mm SMT Package: <9 mm2

GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz Features: 32 dBm typical saturated output power (PSAT) at 18% power added efficiency (PAE) at 39 GHz P1dB compression output power: 31.5 dBm typical High output third-order intercept (IP3): 40 dBm typical High gain: 24 dB typical 50 Ω matched input/output Ceramic, 6 mm × 6 mm, high frequency, air cavity package

13 Gbps Fast Rise Time D-Type Flip-Flop with Programmable Output Voltage Features: Supports High Data Rates: up to 13 Gbps Differential & Singe-Ended Operation Fast Rise & Fall Times: 19/17 ps Low Power Consumption: 260 mW typ. Propagation Delay: 105 ps Single Supply: -3.3V 16 Lead Ceramic 3×3mm SMT Package: 9mm2 See datasheet for additional features

14 Gbps Fast Rise Time 1:2 Fanout Buffer Features: Inputs Terminated Internally in 50 Ohms Differential Inputs are DC Coupled Propagation Delay: 110 ps Fast Rise and Fall Times: 19/18 ps Power Dissipation: 300 mW 16 Lead Ceramic 3x3 mm SMT Package: 9 mm2

Wideband VCO SMT w/Buffer Amplifier, 10 - 20 GHz Features: Wide Tuning Bandwidth Pout: +3 dBm Low SSB Phase Noise: -90 dBc/Hz @100 kHz No External Resonator Needed Single Positive Supply: +5V @ 70 mA 24 Lead 4x4mm SMT Package: 16mm2

Wideband VCO SMT w/Buffer Amplifier, 10 - 20 GHz Features: Wide Tuning Bandwidth Pout: +3 dBm Low SSB Phase Noise: -90 dBc/Hz @100 kHz No External Resonator Needed Single Positive Supply: +5V @ 70 mA 24 Lead 4x4mm SMT Package: 16mm2

13 Gbps Fast Rise Time D-Type Flip-Flop with Programmable Output Voltage Features: Differential & Singe-Ended Operation Low Power Consumption: 264 mW typ. Programmable Differential Output Voltage Swing: 700 - 1300 mV Propagation Delay: 105 ps Fast Rise and Fall Times: 22/20 ps Single Supply: +3.3V 16 Lead 3×3mm SMT Package: 9mm2

13 Gbps Fast Rise Time 2:1 Selector with Programmable Output Voltage Features: Supports High Data Rates: up to 13 Gbps Single-Ended Inputs Differential & Single-Ended Outputs Propagation Delay: 125 ps Fast Rise & Fall Times: 22 / 22 ps Programmable Differential Output Voltage Swing: 600 - 1200 mV Low Power Consumption: 250 mW typ. Single Supply: +3.3V 16 Lead Ceramic 3x3mm SMT Package: 9mm2