Advanced Low Power 5V RS232 Drivers/Receivers with Small Capacitors (Includes LT1130 thru LT1141) Features: ESD Protection over ±10kV (±15kV IEC-1000-4-2 for LT1133A, LT1137A and LT1141A) Uses Small Capacitors: 0.1µF, 0.2µF 1µA Supply Current in SHUTDOWN 120kbaud Operation for RL = 3k, CL = 2500pF 250kbaud Operation for RL = 3k, CL = 1000pF CMOS Comparable Low Power Easy PC Layout: Flowthrough Architecture Rugged Bipolar Design: Absolutely No Latchup Outputs Assume a High Impedance State When Off or Powered Down Improved Protection: RS232 I/O Lines Can Be Forced to ±30V Without Damage Output Overvoltage Does Not Force Current Back into Supplies Available in SO and SSOP Packages

Quad Protected High-Side MOSFET Driver Features: 8V to 48V Power Supply Range Protected from -15V to 60V Supply Transients Fully Enhances N-Channel MOSFET Switches Individual Short-Circuit Protection Individual Automatic Restart Timers Programmable Current Limit, Delay Time, and Auto-Restart Period Voltage-Limited Gate Drive Defaults to OFF State with Open Input Flowthrough Input to Output Pinout Available in 20-Lead DIP or SOL Package

Fractional-N PLL with Integrated VCO SMT, 860 - 1040, 1720 - 2080, 3440 - 4160 MHz Features: RF Bandwidth: 860-1040, 1720-2080, 3440-4160 MHz Fractional or Integer Modes 19-Bit Prescaler Ultra Low Phase Noise -106 dBc/Hz in Band Typ. Figure of Merit (FOM) -227 dBc Integer 24-Bit Step Size, 3 Hz Resolution Typ.  200 MHz, 14-bit Reference Path Input Cycle Slip Prevention 40 Lead 6x6mm SMT Package: 36mm²

Fractional-N PLL with Integrated VCO45 - 1050, 1400 - 2100, 2800 - 4200 MHz Features: RF Bandwidth: 45 - 1050, 1400 - 2100, 2800 - 4200 MHz Maximum Phase Detector Rate 100 MHz Ultra Low Phase Noise: -110 dBc/Hz in Band Typ. Figure of Merit (FOM) -227 dBc/Hz

11.90 GHz to 18.30 GHz Quadband VCO Features: Set of 4 narrow-band VCOs with consistent sensitivity vs. frequency RF and tuning ports common to all 4 VCOs RF output operates from fundamental oscillators with no subharmonic oscillations Up to 8 dBm RF output power Power mute capability No external resonator required 40-lead, 6 mm × 6 mm LFCSP

18.10 GHz to 26.60 GHz Quadband VCO Features: Set of 4 narrow-band VCOs with consistent sensitivity vs. frequency RF and tuning ports common to all 4 VCOs RF output operates from fundamental oscillators with no subharmonic oscillations Up to 4 dBm RF output power Power mute capability No external resonator required 40-lead, 6 mm × 6 mm LFCSP

Fractional-N PLL with Integrated VCO SMT, 1050 - 1205, 2100 - 2410, 4200 - 4820 MHz Features: RF Bandwidth: 1050 - 1205, 2100 - 2410, 4200 - 4820 MHz Fractional or Integer Modes 19-Bit Prescaler Ultra Low Phase Noise -115 dBc/Hz in Band Typ. Figure of Merit (FOM) -230 dBc Integer 24-Bit Step Size, 3 Hz Resolution Typ.  200 MHz, 14-bit Reference Path Input Cycle Slip Prevention 40 Lead 6x6mm SMT Package: 36mm²

Fractional-N PLL with Integrated VCO SMT, 1.31 - 5.66 GHz Features: Ultra Low Phase Noise -112 dBc/Hz in Band Typ. Figure of Merit (FOM) -230 dBc Integer <180 fs RMS Jitter  24-Bit Step Size, 3 Hz Resolution Typ.  Exact Frequency Mode Built in Digital Self Test  40 Lead 6x6mm SMT Package: 36mm²

Low Noise Amplifier, 0.01 GHz to 10 GHz Features: Low noise figure: 1.7 dB typical Single positive supply (self biased) High gain: 15.5 dB typical High OIP3: 34 dBm typical 6-lead, 2 mm × 2 mm LFCSP HMC8411TCPZ-EP Supports defense and aerospace applications (AQEC standard) Download the HMC8411TCPZ-EP data sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request V62/19617 DSCC Drawing Number

Low Noise Amplifier, 0.01 GHz to 9 GHz Features: Low noise figure: 1.9 dB typical at 0.01 GHz to 7 GHz Single positive supply (self biased) High gain: 19.5 dB typical at 0.01 GHz to 7 GHz High OIP3: 35 dBm typical at 0.01 GHz to 7 GHz RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP

40 W (46 dBm), 9 GHz to 10.5 GHz, GaN Power Amplifier Features: High output power: 46 dBm typical at PIN = 23 dBm High small signal gain: 32.5 dB typical High power gain: 23 dB typical at PIN = 23 dBm Frequency range: 9 GHz to 10.5 GHz High power added efficiency: 40% typical at PIN = 23 dBm Supply voltage: VDDxA/VDDxB = 28 V at 1000 mA 6 mm × 6 mm, 40-lead LFSCP

10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier Features: High small signal gain: 15.0 dB typical POUT: 40 dBm typical at PIN = 30 dBm High PAE: 55% typical at PIN = 30 dBm Frequency range: 0.01 GHz to 2.8 GHz across all frequencies VDD = 28 V at quiescent current of 100 mA Internal prematching Simple and compact external tuning for optimal performance 5 mm × 5 mm, 32-lead LFCSP package

28 Gbps XOR / XNOR SMT w/Programmable Output Voltage Features: Inputs Terminated Internally to 50 Ohms Differential & Singe-Ended Operation Propagation Delay: 97 ps Programmable Differential Output Voltage Swing: 500 - 1300 mV Fast Rise and Fall Times: 15/14 ps Low Power Consumption: 241 mW typ. Single Supply: -3.3V 16 Lead 3x3mm SMT Package: 9mm2

28 Gbps, 5-Bit, Digital Time Delay with Programmable Output Voltage Features: Differential and single-ended operation Low power consumption: 610 mW typical Programmable differential Output voltage swing: 500 mVp-p to 1350 mVp-p Fast rise/fall time: 20 ps/18 ps Supports data rates up to 28 Gbps Single supply: −3.3 V 5 mm × 5 mm, 32-terminal ceramic leadless chip carrier (LCC) package: 25 mm2

14 Gbps 2 2 Crosspoint Switch with Programmable Output Voltage Features: Supports Data Rates up to 14 Gbps Differential & Single-Ended Inputs/Outputs Low Power Consumption: 300 mW typ. Fast Rise and Fall Times: 21/21 ps Propagation Delay: 117 ps Programmable Differential Output Voltage Swing: 475 - 1200 mVp-p Single Supply: -3.3V 32 Lead 5x5mm SMT Package: 25mm2

1.0 GHz to 1.9 GHz Tunable Band-Pass Filter Features: Amplitude settling time: 200 ns 32-lead 5 mm × 5 mm RoHS compliant LFCSP package Single chip replacement for mechanically tuned designs Excellent wideband rejection: ≥30 dB

1.95 GHz to 3.4 GHz, Tunable Band-Pass Filter Features:Amplitude settling time: 200 nsRe-entry rejection (wideband rejection): 30 dBSingle-chip replacement for mechanically tuned designsRoHs compliant, 32-lead, 5 mm x 5 mm LFCSP package

5 GHz to 11 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier Features: Low noise figure: 1.8 dB typical High gain: 19.5 dB High P1dB output power: 16 dBm typical Single supply: 3.5 V at 80 mA Output IP3: 28 dBm 50 Ω matched input/output Self biased with optional bias control for quiescent drain control (IDQ) reduction. 3 mm × 3 mm, 16-lead frame chip scale (LFCSP) package: 9 mm²

GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 17 GHz Features: Low noise figure: 1.7 dB typical at 6 GHz to 16 GHz High gain: 18.5 dB typical at 6 GHz to 16 GHz Output power for 1 dB compression (P1dB): 14.5 dBm typical at 6 GHz to 16 GHz Single-supply voltage: 3.5 V at 80 mA typical Output third-order intercept (IP3): 25 dBm typical 50 Ω matched input/output Self biased with optional bias control for IDQ reduction 16-lead, 3 mm × 3 mm, LFCSP package

9 GHz to 12 GHz, GaAs, MMIC, I/Q Downconverter Features: Conversion gain: 11 dB (typical) at IFOUT = 100 MHz Image rejection: 25 dB (typical) at IFOUT = 100 MHz LO to RF isolation: 46 dB (typical) LO to IF isolation: 26 dB (typical) IF output frequency: dc to 3.5 GHz 32-lead, 4.9 mm × 4.9 mm ceramic leadless chip carrier